Transport properties of spin field-effect transistors built on Si and InAs

Ulis 2011 Ultimate Integration on Silicon ◽

10.1109/ulis.2011.5757998 ◽

2011 ◽

Cited By ~ 2

Author(s):

D. Osintsev ◽

V. Sverdlov ◽

Z. Stanojevic ◽

A. Makarov ◽

S. Selberherr

Keyword(s):

Transport Properties ◽

Field Effect ◽

Field Effect Transistors ◽

Spin Field

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Ballistic transport properties in spin field-effect transistors

Journal of Applied Physics ◽

10.1063/1.2970102 ◽

2008 ◽

Vol 104 (5) ◽

pp. 053722 ◽

Cited By ~ 11

Author(s):

K. M. Jiang ◽

Jun Yang ◽

R. Zhang ◽

Hongyan Wang

Keyword(s):

Transport Properties ◽

Field Effect ◽

Field Effect Transistors ◽

Ballistic Transport ◽

Spin Field

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Temperature dependence of the transport properties of spin field-effect transistors built with InAs and Si channels

Solid-State Electronics ◽

10.1016/j.sse.2011.10.015 ◽

2012 ◽

Vol 71 ◽

pp. 25-29 ◽

Cited By ~ 9

Author(s):

D. Osintsev ◽

V. Sverdlov ◽

Z. Stanojević ◽

A. Makarov ◽

S. Selberherr

Keyword(s):

Temperature Dependence ◽

Transport Properties ◽

Field Effect ◽

Field Effect Transistors ◽

Spin Field

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Efficient Simulations of the Transport Properties of Spin Field-Effect Transistors Built on Silicon Fins

Large-Scale Scientific Computing - Lecture Notes in Computer Science ◽

10.1007/978-3-642-29843-1_72 ◽

2012 ◽

pp. 630-637

Author(s):

D. Osintsev ◽

A. Makarov ◽

V. Sverdlov ◽

S. Selberherr

Keyword(s):

Transport Properties ◽

Field Effect ◽

Field Effect Transistors ◽

Spin Field

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Ballistic Transport Properties of Spin Field-Effect Transistors Built on Silicon and InAs Fins

ECS Transactions ◽

10.1149/1.3615189 ◽

2019 ◽

Vol 39 (1) ◽

pp. 155-162

Author(s):

Dmitri S. Osintsev ◽

Viktor Sverdlov ◽

Alexander Makarov ◽

Siegfried Selberherr

Keyword(s):

Transport Properties ◽

Field Effect ◽

Field Effect Transistors ◽

Ballistic Transport ◽

Spin Field

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Impact of the crystal structure ofHfO2on the transport properties of modelHfO2/Si/HfO2silicon-on-insulator field-effect transistors: A combined DFT-scattering theory approach

Physical Review B ◽

10.1103/physrevb.79.235308 ◽

2009 ◽

Vol 79 (23) ◽

Cited By ~ 5

Author(s):

G. Giorgi ◽

L. R. C. Fonseca ◽

A. Korkin ◽

K. Yamashita

Keyword(s):

Crystal Structure ◽

Transport Properties ◽

Scattering Theory ◽

Field Effect ◽

Field Effect Transistors ◽

Theory Approach

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Effect of the orientation of nitro group on the electronic transport properties in single molecular field-effect transistors

Physical Chemistry Chemical Physics ◽

10.1039/c2cp41480e ◽

2013 ◽

Vol 15 (3) ◽

pp. 832-836 ◽

Cited By ~ 6

Author(s):

Yuqing Xu ◽

Bin Cui ◽

Guomin Ji ◽

Dongmei Li ◽

Desheng Liu

Keyword(s):

Transport Properties ◽

Nitro Group ◽

Electronic Transport ◽

Field Effect ◽

Field Effect Transistors ◽

Molecular Field ◽

Electronic Transport Properties

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Transport properties of hydrogen passivated silicon nanotubes and silicon nanotube field effect transistors

Journal of Materials Chemistry C ◽

10.1039/c6tc04429h ◽

2017 ◽

Vol 5 (6) ◽

pp. 1409-1413 ◽

Cited By ~ 5

Author(s):

E. Montes ◽

U. Schwingenschlögl

Keyword(s):

Transport Properties ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanotubes ◽

High Transconductance ◽

Passivated Silicon ◽

Silicon Nanotube

Hydrogen passivated silicon nanotube field effect transistors are predicted to combine high transconductance with low sub-threshold swing.

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Thickness Tunable Transport Properties in $\mathbf{MoTe}_{\mathbf{2}}$ Field Effect Transistors

2018 76th Device Research Conference (DRC) ◽

10.1109/drc.2018.8442261 ◽

2018 ◽

Author(s):

Yuqi Zhu ◽

Feng Zhang ◽

Joerg Appenzeller

Keyword(s):

Transport Properties ◽

Field Effect ◽

Field Effect Transistors

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Negative differential resistance in gate all-around spin field effect transistors

Nanosystems Physics Chemistry Mathematics ◽

10.17586/2220-8054-2020-11-3-301-306 ◽

2020 ◽

Vol 11 (3) ◽

pp. 301-306 ◽

Cited By ~ 3

Author(s):

G.F.A. Malik ◽

M.A. Kharadi ◽

F.A. Khanday ◽

K.A. Shah ◽

N. Parveen

Keyword(s):

Negative Differential Resistance ◽

Field Effect ◽

Field Effect Transistors ◽

Differential Resistance ◽

Spin Field

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Comprehensive study of spin field effect transistors with co-graphene ferromagnetic contacts

Journal of Magnetism and Magnetic Materials ◽

10.1016/j.jmmm.2020.167410 ◽

2021 ◽

Vol 517 ◽

pp. 167410

Author(s):

Neetu Gyanchandani ◽

Santosh Pawar ◽

Prashant Maheshwary ◽

Kailash Nemade

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Spin Field ◽

Comprehensive Study

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