Ballistic transport in extended Datta–Das spin field effect transistors

2011 ◽  
Vol 151 (18) ◽  
pp. 1214-1219 ◽  
Author(s):  
Yun-Chang Xiao ◽  
Rui Zhu ◽  
Wen-Ji Deng
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Ballistic Transport ◽  
Spin Field

Ballistic transport properties in spin field-effect transistors

2008 ◽  
Vol 104 (5) ◽  
pp. 053722 ◽  
Author(s):  
K. M. Jiang ◽  
Jun Yang ◽  
R. Zhang ◽  
Hongyan Wang
Keyword(s):  
Transport Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Ballistic Transport ◽  
Spin Field

Ballistic Transport Properties of Spin Field-Effect Transistors Built on Silicon and InAs Fins

2019 ◽  
Vol 39 (1) ◽  
pp. 155-162
Author(s):  
Dmitri S. Osintsev ◽  
Viktor Sverdlov ◽  
Alexander Makarov ◽  
Siegfried Selberherr
Keyword(s):  
Transport Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Ballistic Transport ◽  
Spin Field

Comparative Performance Analysis of Nanowire and Nanotube Field Effect Transistors

2021 ◽  
pp. 54-70
Author(s):  
Raj Kumar ◽  
Shashi Bala ◽  
Arvind Kumar
Keyword(s):  
Performance Analysis ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Ballistic Transport ◽  
High Mobility ◽  
Short Channel Effects ◽  
Short Channel ◽  
Comparative Performance ◽  
Channel Effects ◽  
And Performance

To have enhanced drive current and diminish short channel effects, planer MOS transistors have migrated from single-gate devices to three-dimensional multi-gate MOSFETs. The gate-all-around nanowire field-effect transistor (GAA NWFET) and nanotube or double gate-all-around field-effect transistors (DGGA-NTFET) have been proposed to deal with short channel effects and performance relates issues. Nanowire and nanotube-based field-effect transistors can be considered as leading candidates for nanoscale devices due to their superior electrostatic controllability, and ballistic transport properties. In this work, the performance of GAA NWFETs and DGAA-NT FETs will be analyzed and compared. III-V semiconductor materials as a channel will also be employed due to their high mobility over silicon. Performance analysis of junctionless nanowire and nanotube FETs will also be compared and presented.

Comprehensive study of spin field effect transistors with co-graphene ferromagnetic contacts

2021 ◽  
Vol 517 ◽  
pp. 167410
Author(s):  
Neetu Gyanchandani ◽  
Santosh Pawar ◽  
Prashant Maheshwary ◽  
Kailash Nemade
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Spin Field ◽  
Comprehensive Study

Ballistic transport simulation of acceptor–donor C3N/C3B double-wall hetero-nanotube field effect transistors

2019 ◽  
Vol 21 (35) ◽  
pp. 19567-19574 ◽  
Author(s):  
Jianwei Zhao ◽  
Na Cheng ◽  
Yuanyuan He
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Ballistic Transport ◽  
Channel Structure ◽  
Potential Candidate ◽  
Next Generation ◽  
One Dimensional ◽  
Transport Simulation ◽  
The One ◽  
Double Wall

The one-dimensional (1D) acceptor–donor (A–D) hetero-nanotube (HNT) has attracted much attention as a potential candidate for a channel structure of next-generation field effect transistors (FETs).

ON THE DRAIN CURRENT SATURATION IN CARBON NANOTUBE FIELD EFFECT TRANSISTORS

NANO ◽  
2010 ◽  
Vol 05 (03) ◽  
pp. 161-165 ◽  
Author(s):  
A. BENFDILA ◽  
S. ABBAS ◽  
R. IZQUIERDO ◽  
R. TALMAT ◽  
A. VASEASHTA
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Electronic Devices ◽  
Ballistic Transport ◽  
Drain Current ◽  
Functional Behavior ◽  
Current Saturation ◽  
Current Voltage ◽  
Saturation Region ◽  
Current Voltage Characteristics

Electronic devices based on carbon nanotubes (CNTs) show potential for circuit miniaturization due to their superior electrical characteristics and reduced dimensionality. The CNT field effect transistors (CNFETs) offer breakthrough in miniaturization of various electronic circuits. Investigation of ballistic transport governing the operation of CNFETs is essential for understanding the device's functional behavior. This investigation is focused on a study of current–voltage characteristics of device behavior in hard saturation region. The investigation utilizes a set of current–voltage characteristics obtained on typical devices. This work is an extension of our earlier work describing application of our approach to Si -MOSFET behavior in the saturation region.

scholarly journals Spin Field Effect Transistors with Ultracold Atoms

2008 ◽  
Vol 101 (26) ◽  
Author(s):  
J. Y. Vaishnav ◽  
Julius Ruseckas ◽  
Charles W. Clark ◽  
Gediminas Juzeliūnas
Keyword(s):  
Field Effect ◽  
Ultracold Atoms ◽  
Field Effect Transistors ◽  
Spin Field

Simulation, modelling and characterisation of quasi-ballistic transport in nanometer sized field effect transistors: from TCAD to atomistic simulation

2010 ◽  
Vol 7 (4/5/6/7/8) ◽  
pp. 348
Author(s):  
Stephan Roche ◽  
Thierry Poiroux ◽  
Gilles Lecarval ◽  
Sylvain Barraud ◽  
Francois Triozon ◽  
...  
Keyword(s):  
Atomistic Simulation ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Ballistic Transport ◽  
Simulation Modelling
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