Self-aligned n-channel metal-oxide-semiconductor field effect transistor on high-indium-content In0.53Ga0.47As and InP using physical vapor deposition HfO2 and silicon interface passivation layer

InJo Ok; H. Kim; M. Zhang; F. Zhu; S. Park; J. Yum; H. Zhao; Domingo Garcia; Prashant Majhi; N. Goel; W. Tsai; C. K. Gaspe; M. B. Santos; Jack C. Lee

doi:10.1063/1.2920438

Self-aligned n-channel metal-oxide-semiconductor field effect transistor on high-indium-content In0.53Ga0.47As and InP using physical vapor deposition HfO2 and silicon interface passivation layer

Applied Physics Letters ◽

10.1063/1.2920438 ◽

2008 ◽

Vol 92 (20) ◽

pp. 202903 ◽

Cited By ~ 48

Author(s):

InJo Ok ◽

H. Kim ◽

M. Zhang ◽

F. Zhu ◽

S. Park ◽

...

Keyword(s):

Vapor Deposition ◽

Physical Vapor Deposition ◽

Field Effect Transistor ◽

Indium Content ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Indium Content ◽

Effect Transistor ◽

Interface Passivation ◽

Silicon Interface

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A high performance In0.53Ga0.47As metal-oxide-semiconductor field effect transistor with silicon interface passivation layer

Applied Physics Letters ◽

10.1063/1.3068752 ◽

2009 ◽

Vol 94 (1) ◽

pp. 013511 ◽

Cited By ~ 13

Author(s):

Feng Zhu ◽

Han Zhao ◽

I. Ok ◽

H. S. Kim ◽

J. Yum ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Interface Passivation ◽

Silicon Interface

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Metal gate: HfO2 metal-oxide-semiconductor structures on high-indium-content InGaAs substrate using physical vapor deposition

Applied Physics Letters ◽

10.1063/1.2844879 ◽

2008 ◽

Vol 92 (11) ◽

pp. 112904 ◽

Cited By ~ 3

Author(s):

InJo Ok ◽

H. Kim ◽

M. Zhang ◽

F. Zhu ◽

S. Park ◽

...

Keyword(s):

Metal Oxide ◽

Vapor Deposition ◽

Physical Vapor Deposition ◽

Indium Content ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

Semiconductor Structures ◽

High Indium Content

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Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with amorphous silicon interface passivation layer and thin HfO2 gate oxide

Applied Physics Letters ◽

10.1063/1.2762295 ◽

2007 ◽

Vol 91 (4) ◽

pp. 043507 ◽

Cited By ~ 9

Author(s):

F. Zhu ◽

S. Koveshnikov ◽

I. Ok ◽

H. S. Kim ◽

M. Zhang ◽

...

Keyword(s):

Metal Oxide ◽

Amorphous Silicon ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Interface Passivation ◽

Silicon Interface

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Modeling of low-frequency noise in metal-oxide-semiconductor field-effect transistor with electron trapping-detrapping at oxide-silicon interface

IEEE Transactions on Electron Devices ◽

10.1109/16.119029 ◽

1991 ◽

Vol 38 (8) ◽

pp. 1883-1888 ◽

Cited By ~ 6

Author(s):

H. Wong ◽

Y.C. Cheng

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Low Frequency ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electron Trapping ◽

Frequency Noise ◽

Effect Transistor ◽

Silicon Interface

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$\bf SiO_{2}/InP$ Structure Prepared by Direct Photo-Chemical Vapor Deposition Using Deuterium Lamp and Its Applications to Metal-Oxide-Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.476 ◽

1995 ◽

Vol 34 (Part 1, No. 2A) ◽

pp. 476-481 ◽

Cited By ~ 2

Author(s):

Shih-Chang Shei ◽

Yan-Kuin Su ◽

Chih-Jen Hwang ◽

Meiso Yokoyama

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Deuterium Lamp

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Fabrication of n-metal–oxide semiconductor field effect transistor with Ta2O5 gate oxide prepared by plasma enhanced metalorganic chemical vapor deposition

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.587550 ◽

1994 ◽

Vol 12 (5) ◽

pp. 3006 ◽

Cited By ~ 34

Author(s):

Sun-Oo Kim

Keyword(s):

Vapor Deposition ◽

Field Effect ◽

Metalorganic Chemical Vapor Deposition ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Metalorganic Chemical

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Fabrication of a Si1-xGexChannel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Containing High Ge Fraction Layer by Low-Pressure Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.438 ◽

1993 ◽

Vol 32 (Part 1, No. 1B) ◽

pp. 438-441 ◽

Cited By ~ 35

Author(s):

Kinya Goto ◽

Junichi Murota ◽

Takahiro Maeda ◽

Reiner SchÜtz ◽

Kiyohito Aizawa ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Pressure Chemical ◽

Effect Transistor

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High Integrity SiO$_{2}$ Gate Insulator Formed by Microwave-Excited Plasma Enhanced Chemical Vapor Deposition for AlGaN/GaN Hybrid Metal–Oxide–Semiconductor Heterojunction Field-Effect Transistor on Si Substrate

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.04df03 ◽

2012 ◽

Vol 51 ◽

pp. 04DF03 ◽

Cited By ~ 7

Author(s):

Hiroshi Kambayashi ◽

Takehiko Nomura ◽

Sadahiro Kato ◽

Hirokazu Ueda ◽

Akinobu Teramoto ◽

...

Keyword(s):

Vapor Deposition ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Gate Insulator ◽

Oxide Semiconductor ◽

Si Substrate ◽

Effect Transistor ◽

High Integrity ◽

Hybrid Metal Oxide

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Detailed investigation of InSb p-channel metal-oxide-semiconductor field effect transistor prepared by photo-enhanced chemical vapor deposition

IEEE Transactions on Electron Devices ◽

10.1109/16.381972 ◽

1995 ◽

Vol 42 (5) ◽

pp. 795-803 ◽

Cited By ~ 2

Author(s):

Biing-Der Liu ◽

Si-Chen Lee ◽

Tai-Ping Sun ◽

Sheng-Jenn Yang

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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AlGaN/GaN metal-oxide semiconductor heterostructure field-effect transistor with photo-chemical-vapor deposition SiO2 gate oxide

Journal of Electronic Materials ◽

10.1007/s11664-003-0167-2 ◽

2003 ◽

Vol 32 (5) ◽

pp. 407-410 ◽

Cited By ~ 9

Author(s):

C. K. Wang ◽

Y. Z. Chiou ◽

S. J. Chang ◽

Y. K. Su ◽

B. R. Huang ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Effect Transistor

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