A high performance In0.53Ga0.47As metal-oxide-semiconductor field effect transistor with silicon interface passivation layer

Feng Zhu; Han Zhao; I. Ok; H. S. Kim; J. Yum; Jack C. Lee; Niti Goel; W. Tsai; C. K. Gaspe; M. B. Santos

doi:10.1063/1.3068752

A high performance In0.53Ga0.47As metal-oxide-semiconductor field effect transistor with silicon interface passivation layer

Applied Physics Letters ◽

10.1063/1.3068752 ◽

2009 ◽

Vol 94 (1) ◽

pp. 013511 ◽

Cited By ~ 13

Author(s):

Feng Zhu ◽

Han Zhao ◽

I. Ok ◽

H. S. Kim ◽

J. Yum ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Interface Passivation ◽

Silicon Interface

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High performance atomic-layer-deposited LaLuO3/Ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistor with thermally grown GeO2 as interfacial passivation layer

Applied Physics Letters ◽

10.1063/1.3462303 ◽

2010 ◽

Vol 97 (1) ◽

pp. 012106 ◽

Cited By ~ 30

Author(s):

J. J. Gu ◽

Y. Q. Liu ◽

M. Xu ◽

G. K. Celler ◽

R. G. Gordon ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Thermally Grown

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Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with amorphous silicon interface passivation layer and thin HfO2 gate oxide

Applied Physics Letters ◽

10.1063/1.2762295 ◽

2007 ◽

Vol 91 (4) ◽

pp. 043507 ◽

Cited By ~ 9

Author(s):

F. Zhu ◽

S. Koveshnikov ◽

I. Ok ◽

H. S. Kim ◽

M. Zhang ◽

...

Keyword(s):

Metal Oxide ◽

Amorphous Silicon ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Interface Passivation ◽

Silicon Interface

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Modeling of low-frequency noise in metal-oxide-semiconductor field-effect transistor with electron trapping-detrapping at oxide-silicon interface

IEEE Transactions on Electron Devices ◽

10.1109/16.119029 ◽

1991 ◽

Vol 38 (8) ◽

pp. 1883-1888 ◽

Cited By ~ 6

Author(s):

H. Wong ◽

Y.C. Cheng

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Low Frequency ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electron Trapping ◽

Frequency Noise ◽

Effect Transistor ◽

Silicon Interface

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High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics

Applied Physics Letters ◽

10.1063/1.2956393 ◽

2008 ◽

Vol 93 (3) ◽

pp. 033516 ◽

Cited By ~ 109

Author(s):

T. D. Lin ◽

H. C. Chiu ◽

P. Chang ◽

L. T. Tung ◽

C. P. Chen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Gate Dielectrics ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel ◽

Effect Transistor

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Characterization of Strain for High-Performance Metal–Oxide–Semiconductor Field-Effect-Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2538 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2538-2543 ◽

Cited By ~ 22

Author(s):

Daisuke Kosemura ◽

Yasuto Kakemura ◽

Tetsuya Yoshida ◽

Atsushi Ogura ◽

Masayuki Kohno ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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Enhancement mode GaAs metal-oxide-semiconductor field-effect-transistor integrated with thin AlN surface passivation layer and silicon/phosphorus coimplanted source/drain

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3025909 ◽

2009 ◽

Vol 27 (1) ◽

pp. 214 ◽

Cited By ~ 11

Author(s):

Fei Gao ◽

S. J. Lee ◽

D. L. Kwong

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Surface Passivation ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Enhancement Mode ◽

Effect Transistor

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Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with HfO2 dielectric and germanium interfacial passivation layer

Applied Physics Letters ◽

10.1063/1.2396914 ◽

2006 ◽

Vol 89 (22) ◽

pp. 222904 ◽

Cited By ~ 24

Author(s):

Hyoung-Sub Kim ◽

Injo Ok ◽

Manhong Zhang ◽

T. Lee ◽

F. Zhu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Effect Transistor

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Effects of Anneal and Silicon Interface Passivation Layer Thickness on Device Characteristics of In[sub 0.53]Ga[sub 0.47]As Metal-Oxide-Semiconductor Field-Effect Transistors

Electrochemical and Solid-State Letters ◽

10.1149/1.3074298 ◽

2009 ◽

Vol 12 (4) ◽

pp. H131 ◽

Cited By ~ 5

Author(s):

Feng Zhu ◽

Han Zhao ◽

I. Ok ◽

H. S. Kim ◽

J. Yum ◽

...

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Interface Passivation ◽

Silicon Interface

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Atomic-Layer-Deposition HfO2-Based InP n-Channel Metal-Oxide-Semiconductor Field Effect Transistor Using Different Thicknesses of Al2O3 as Interfacial Passivation Layer

ECS Transactions ◽

10.1149/1.3481638 ◽

2019 ◽

Vol 33 (3) ◽

pp. 487-493 ◽

Cited By ~ 5

Author(s):

Yanzhen Wang ◽

Han Zhao ◽

Yen-Ting Chen ◽

Fei Xue ◽

Fei Zhou ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Layer Deposition ◽

Effect Transistor

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MoS₂/dielectric stack optimization for high performance metal-oxide-semiconductor field-effect transistor

10.14711/thesis-991012637367703412 ◽

2018 ◽

Author(s):

Yaoqiao Hu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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