Metal gate: HfO2 metal-oxide-semiconductor structures on high-indium-content InGaAs substrate using physical vapor deposition

2008 ◽  
Vol 92 (11) ◽  
pp. 112904 ◽  
Author(s):  
InJo Ok ◽  
H. Kim ◽  
M. Zhang ◽  
F. Zhu ◽  
S. Park ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Indium Content ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Metal Gate ◽  
Semiconductor Structures ◽  
High Indium Content

High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAlO3 gate dielectric

2007 ◽  
Vol 91 (9) ◽  
pp. 093509 ◽  
Author(s):  
N. Goel ◽  
P. Majhi ◽  
W. Tsai ◽  
M. Warusawithana ◽  
D. G. Schlom ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Gate Dielectric ◽  
Indium Content ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High Indium Content ◽  
Metal Oxide Semiconductor Capacitor

Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

2015 ◽  
Vol 106 (5) ◽  
pp. 051605 ◽  
Author(s):  
Shenghou Liu ◽  
Shu Yang ◽  
Zhikai Tang ◽  
Qimeng Jiang ◽  
Cheng Liu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Interfacial Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures

Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition

2010 ◽  
Vol 107 (10) ◽  
pp. 106104 ◽  
Author(s):  
D. Gregušová ◽  
R. Stoklas ◽  
Ch. Mizue ◽  
Y. Hori ◽  
J. Novák ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Trap States ◽  
Semiconductor Structures ◽  
Layer Deposition
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