Fabrication of a Si1-xGexChannel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Containing High Ge Fraction Layer by Low-Pressure Chemical Vapor Deposition

Kinya Goto; Junichi Murota; Takahiro Maeda; Reiner SchÜtz; Kiyohito Aizawa; Roland Kircher; Kuniyoshi Yokoo; Shoichi Ono

doi:10.1143/jjap.32.438

Fabrication of a Si1-xGexChannel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Containing High Ge Fraction Layer by Low-Pressure Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.438 ◽

1993 ◽

Vol 32 (Part 1, No. 1B) ◽

pp. 438-441 ◽

Cited By ~ 35

Author(s):

Kinya Goto ◽

Junichi Murota ◽

Takahiro Maeda ◽

Reiner SchÜtz ◽

Kiyohito Aizawa ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Pressure Chemical ◽

Effect Transistor

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$\bf SiO_{2}/InP$ Structure Prepared by Direct Photo-Chemical Vapor Deposition Using Deuterium Lamp and Its Applications to Metal-Oxide-Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.476 ◽

1995 ◽

Vol 34 (Part 1, No. 2A) ◽

pp. 476-481 ◽

Cited By ~ 2

Author(s):

Shih-Chang Shei ◽

Yan-Kuin Su ◽

Chih-Jen Hwang ◽

Meiso Yokoyama

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Deuterium Lamp

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Detailed investigation of InSb p-channel metal-oxide-semiconductor field effect transistor prepared by photo-enhanced chemical vapor deposition

IEEE Transactions on Electron Devices ◽

10.1109/16.381972 ◽

1995 ◽

Vol 42 (5) ◽

pp. 795-803 ◽

Cited By ~ 2

Author(s):

Biing-Der Liu ◽

Si-Chen Lee ◽

Tai-Ping Sun ◽

Sheng-Jenn Yang

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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High breakdown voltage InSb p-channel metal-oxide-semiconductor field effect transistor prepared by photoenhanced chemical vapor deposition

10.1117/12.179699 ◽

1994 ◽

Cited By ~ 1

Author(s):

Biing-Der Liu ◽

Si-Chen Lee ◽

Kou-Chen Liu ◽

Tai Ping Sun ◽

Sheng-Jehn Yang

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Breakdown Voltage ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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InSbp‐channel metal‐oxide‐semiconductor field‐effect transistor prepared by photoenhanced chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.110068 ◽

1993 ◽

Vol 63 (26) ◽

pp. 3622-3624 ◽

Cited By ~ 4

Author(s):

Biing‐Der Liu ◽

Si‐Chen Lee ◽

Kou‐Chen Liu ◽

Tai‐Ping Sun ◽

Sheng‐Jehn Yang

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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Pt–Germanide Formed by Laser Annealing and Its Application for Schottky Source/Drain Metal–Oxide–Semiconductor Field-Effect Transistor Integrated with TaN/Chemical Vapor Deposition HfO2/Ge Gate Stack

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2548 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2548-2550 ◽

Cited By ~ 3

Author(s):

Rui Li ◽

Sung-Joo Lee ◽

Ming-Hui Hong ◽

Dong-Zhi Chi ◽

Dim-Lee Kwong

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Laser Annealing ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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AlGaN/GaN metal-oxide semiconductor heterostructure field-effect transistor with photo-chemical-vapor deposition SiO2 gate oxide

Journal of Electronic Materials ◽

10.1007/s11664-003-0167-2 ◽

2003 ◽

Vol 32 (5) ◽

pp. 407-410 ◽

Cited By ~ 9

Author(s):

C. K. Wang ◽

Y. Z. Chiou ◽

S. J. Chang ◽

Y. K. Su ◽

B. R. Huang ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Effect Transistor

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Rapid thermal chemical vapor deposition of zirconium oxide for metal-oxide-semiconductor field effect transistor application

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1396639 ◽

2001 ◽

Vol 19 (5) ◽

pp. 1782 ◽

Cited By ~ 80

Author(s):

Jane P. Chang ◽

You-Sheng Lin ◽

Karen Chu

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Zirconium Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thermal Chemical Vapor Deposition ◽

Effect Transistor

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P-Channel Metal Oxide Semiconductor Field Effect Transistors with Polycrystalline-Si1-xGex Gate Grown by Ultra-High Vacuum Chemical Vapor Deposition System

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.l1099 ◽

1999 ◽

Vol 38 (Part 2, No. 10A) ◽

pp. L1099-L1101 ◽

Cited By ~ 4

Author(s):

Kun-Ming Chen ◽

Hsiang-Jen Huang ◽

Guo-Wei Huang ◽

Chun-Yen Chang ◽

Liang-Po Chen

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistors ◽

High Vacuum ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Ultra High Vacuum ◽

Oxide Semiconductor

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Fabrication of n-metal–oxide semiconductor field effect transistor with Ta2O5 gate oxide prepared by plasma enhanced metalorganic chemical vapor deposition

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.587550 ◽

1994 ◽

Vol 12 (5) ◽

pp. 3006 ◽

Cited By ~ 34

Author(s):

Sun-Oo Kim

Keyword(s):

Vapor Deposition ◽

Field Effect ◽

Metalorganic Chemical Vapor Deposition ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Metalorganic Chemical

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Improved C–V characteristics of metal-oxide-semiconductor capacitors with tantalum nitride gate electrodes grown by ultra-low-pressure chemical vapor deposition

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1835311 ◽

2005 ◽

Vol 23 (1) ◽

pp. 42 ◽

Cited By ~ 14

Author(s):

Masaru Kadoshima ◽

Koji Akiyama ◽

Katsuhiko Yamamoto ◽

Hideaki Fujiwara ◽

Tetsuji Yasuda ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Metal Oxide Semiconductor ◽

Tantalum Nitride ◽

Oxide Semiconductor ◽

Gate Electrodes ◽

Pressure Chemical

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