Fabrication of n-metal–oxide semiconductor field effect transistor with Ta2O5 gate oxide prepared by plasma enhanced metalorganic chemical vapor deposition
1994 ◽
Vol 12
(5)
◽
pp. 3006
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2003 ◽
Vol 32
(5)
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pp. 407-410
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1995 ◽
Vol 34
(Part 1, No. 2A)
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pp. 476-481
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1993 ◽
Vol 32
(Part 1, No. 1B)
◽
pp. 438-441
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2000 ◽
Vol 39
(Part 1, No. 5A)
◽
pp. 2508-2511
1995 ◽
Vol 42
(5)
◽
pp. 795-803
◽
2001 ◽
Vol 19
(5)
◽
pp. 1782
◽
1999 ◽
Vol 38
(Part 1, No. 4B)
◽
pp. 2630-2633
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