Formation mechanism of Ohmic contacts on AlGaN∕GaN heterostructure: Electrical and microstructural characterizations

2008 ◽  
Vol 103 (9) ◽  
pp. 093516 ◽  
Author(s):  
Liang Wang ◽  
Fitih M. Mohammed ◽  
Ilesanmi Adesida
Keyword(s):  
Formation Mechanism ◽  
Ohmic Contacts ◽  
Gan Heterostructure

scholarly journals Study of Interface of Ohmic Contacts to AlGaN/GaN Heterostructure

2016 ◽  
Vol 14 (2) ◽  
Author(s):  
Joanna Prazmowska ◽  
Wojciech Piotr Macherzynski ◽  
Regina Paszkiewicz
Keyword(s):  
Ohmic Contacts ◽  
Gan Heterostructure

Microstructural characterization of Au-free Si/Ti/Al/Cu ohmic contacts in an AlGaN/GaN heterostructure

2015 ◽  
Vol 590 ◽  
pp. 335-339 ◽  
Author(s):  
Seonno Yoon ◽  
Jangwon Bang ◽  
Yunwon Song ◽  
Jungwoo Oh
Keyword(s):  
Ohmic Contacts ◽  
Microstructural Characterization ◽  
Gan Heterostructure

Impact of Ti/Al atomic ratio on the formation mechanism of non-recessed Au-free Ohmic contacts on AlGaN/GaN heterostructures

2016 ◽  
Vol 120 (10) ◽  
pp. 104502 ◽  
Author(s):  
A. Constant ◽  
J. Baele ◽  
P. Coppens ◽  
W. Qin ◽  
H. Ziad ◽  
...  
Keyword(s):  
Formation Mechanism ◽  
Ohmic Contacts ◽  
Atomic Ratio

Ni-Based Ohmic Contacts to Silicon Carbide Examined by Electron Microscopy

2012 ◽  
Vol 186 ◽  
pp. 82-85 ◽  
Author(s):  
Marek Wzorek ◽  
Andrzej Czerwiński ◽  
Andrian V. Kuchuk ◽  
Jacek Ratajczak ◽  
Ania Piotrowska ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Silicon Carbide ◽  
High Temperature ◽  
Phase Transformations ◽  
Formation Mechanism ◽  
Ohmic Contacts ◽  
Contact Layer ◽  
Contact Structures ◽  
High Temperature Annealing ◽  
Annealing Step

Ni/Si multilayer contact structures to 4H-SiC after subsequent annealing steps are investigated with electron microscopy methods. After high temperature annealing step, specific defects in the contact structures are observed. The influence of phase transformations during annealings on the morphology on the contacts is discussed and the explanation of formation mechanism of voids within contact layer is proposed.

High temperature induced failure in Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructure

2012 ◽  
Vol 52 (2) ◽  
pp. 434-438 ◽  
Author(s):  
Zhihua Dong ◽  
Jinyan Wang ◽  
C.P. Wen ◽  
Shenghou Liu ◽  
Rumin Gong ◽  
...  
Keyword(s):  
High Temperature ◽  
Ohmic Contacts ◽  
Gan Heterostructure

Formation mechanism of InxGa1−xAs ohmic contacts to n-type GaAs prepared by radio frequency sputtering

1994 ◽  
Vol 23 (9) ◽  
pp. 983-989 ◽  
Author(s):  
Chihiro J. Uchibori ◽  
Masayuki Okunishi ◽  
T. Oku ◽  
A. Otsuki ◽  
Naoki Ono ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Formation Mechanism ◽  
Ohmic Contacts ◽  
Radio Frequency Sputtering

Stable hydrogen sensors from AlGaN∕GaN heterostructure diodes with TiB2-based Ohmic contacts

2007 ◽  
Vol 90 (25) ◽  
pp. 252109 ◽  
Author(s):  
Hung-Ta Wang ◽  
T. J. Anderson ◽  
B. S. Kang ◽  
F. Ren ◽  
Changzhi Li ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Hydrogen Sensors ◽  
Gan Heterostructure
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