Impact of Ti/Al atomic ratio on the formation mechanism of non-recessed Au-free Ohmic contacts on AlGaN/GaN heterostructures

2016 ◽  
Vol 120 (10) ◽  
pp. 104502 ◽  
Author(s):  
A. Constant ◽  
J. Baele ◽  
P. Coppens ◽  
W. Qin ◽  
H. Ziad ◽  
...  
Keyword(s):  
Formation Mechanism ◽  
Ohmic Contacts ◽  
Atomic Ratio

THE SIGNIFICANCE OF VALENCE ELECTRON CONCENTRATION ON THE FORMATION MECHANISM OF SOME TERNARY ALUMINUM-BASED QUASICRYSTALS

2002 ◽  
Vol 16 (31) ◽  
pp. 4665-4683 ◽  
Author(s):  
N. S. ATHANASIOU ◽  
C. POLITIS ◽  
J. C. SPIRLET ◽  
S. BASKOUTAS ◽  
V. KAPAKLIS
Keyword(s):  
Transition Metal ◽  
Formation Mechanism ◽  
Electron Concentration ◽  
Valence Electron ◽  
Composition Range ◽  
Atomic Radius ◽  
Atomic Ratio ◽  
Radius Ratio ◽  
Valence Electron Concentration ◽  
Stabilization Mechanism

In the present study we report on the formation mechanism of some binary Al-TM and ternary Al-Cu-TM (TM = transition metal) quasicrystals. We have found that the formation mechanism of quasicrystalline phases in the binary Al-TM system takes place at extremely high solidification rates, is linked to the location of the transition metal in the periodic table, depends upon the atomic radius ratio of the constituents, is composition sensitive, and as a result is strongly affected by the effective atomic radius ratio (a eff ). Applying empirical criteria on the formation of ternary Al-Cu-TM quasicrystals we were able to calculate the composition range at which the formation tendency and stability of quasicrystalline phases is enhanced. The method presented can be viewed as an empirical criterion to find new and high quality quasicrystalline materials and to optimize the quasicrystalline material composition. Furthermore, it was observed that the stabilization mechanism of the quasicrystalline Al-Cu-(Fe, Co, Ru, Rh, Os, Ir) phases takes place when the atomic ratio (TM+Cu)/Al ranges from 0.46 to 0.69 and for a eff values between 4.10 and 7.30. At the same valence electron concentration, metastable icosahedral Al-Cu-(Cr, Mn) phases are formed at relatively smaller atomic ratios (TM+Cu)/Al and having higher a eff values in comparison to those of the stable D- and I-phases.

Ni-Based Ohmic Contacts to Silicon Carbide Examined by Electron Microscopy

2012 ◽  
Vol 186 ◽  
pp. 82-85 ◽  
Author(s):  
Marek Wzorek ◽  
Andrzej Czerwiński ◽  
Andrian V. Kuchuk ◽  
Jacek Ratajczak ◽  
Ania Piotrowska ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Silicon Carbide ◽  
High Temperature ◽  
Phase Transformations ◽  
Formation Mechanism ◽  
Ohmic Contacts ◽  
Contact Layer ◽  
Contact Structures ◽  
High Temperature Annealing ◽  
Annealing Step

Ni/Si multilayer contact structures to 4H-SiC after subsequent annealing steps are investigated with electron microscopy methods. After high temperature annealing step, specific defects in the contact structures are observed. The influence of phase transformations during annealings on the morphology on the contacts is discussed and the explanation of formation mechanism of voids within contact layer is proposed.

Formation mechanism of InxGa1−xAs ohmic contacts to n-type GaAs prepared by radio frequency sputtering

1994 ◽  
Vol 23 (9) ◽  
pp. 983-989 ◽  
Author(s):  
Chihiro J. Uchibori ◽  
Masayuki Okunishi ◽  
T. Oku ◽  
A. Otsuki ◽  
Naoki Ono ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Formation Mechanism ◽  
Ohmic Contacts ◽  
Radio Frequency Sputtering

scholarly journals Formation Mechanism of Low Contact Resistance PdZn-based Ohmic Contacts for p-type InP

2002 ◽  
Vol 43 (6) ◽  
pp. 1352-1359 ◽  
Author(s):  
Hirokuni Asamizu ◽  
Akira Yamaguchi ◽  
Yasuhiro Iguchi ◽  
Tadashi Saitoh ◽  
Masanori Murakami
Keyword(s):  
Contact Resistance ◽  
Formation Mechanism ◽  
Ohmic Contacts ◽  
P Type

Formation Mechanism of Cu-based Ohmic Contacts for GaAs Solar Cells

2020 ◽  
Author(s):  
Mengdi Liu ◽  
Anastasia H. Soeriyadi ◽  
Ning Song ◽  
Pei-Chieh Hsiao ◽  
Udo Romer ◽  
...  
Keyword(s):  
Solar Cells ◽  
Formation Mechanism ◽  
Ohmic Contacts

Formation mechanism of cerium oxide-doped indium oxide/Ag Ohmic contacts on p-type GaN

2006 ◽  
Vol 89 (26) ◽  
pp. 262115 ◽  
Author(s):  
Dong-Seok Leem ◽  
Tae-Wook Kim ◽  
Takhee Lee ◽  
Ja-Soon Jang ◽  
Young-Woo Ok ◽  
...  
Keyword(s):  
Cerium Oxide ◽  
Indium Oxide ◽  
Formation Mechanism ◽  
Ohmic Contacts ◽  
P Type

Ni-Al-Ti Ohmic Contacts on Al Implanted 4H-SiC

2017 ◽  
Vol 897 ◽  
pp. 391-394 ◽  
Author(s):  
P. Fedeli ◽  
Maurizio Puzzanghera ◽  
Francesco Moscatelli ◽  
Renato Amaral Minamisawa ◽  
Giovanni Alfieri ◽  
...  
Keyword(s):  
High Temperature ◽  
Contact Resistance ◽  
Ohmic Contacts ◽  
Atomic Ratio ◽  
Specific Contact Resistance ◽  
Specific Contact ◽  
P Type

This study shows that an Al-Ti bilayer with an Al to Ti atomic ratio suitable forohmic contacts on p-type 4H-SiC can be covered by a Ni film during the high temperature alloying process, without altering the ohmic nature, while eliminating a detrimental contact morphology caused by the presence of molten Al-Si during alloying. On 1×1020 cm-3 Al-implanted 4H-SiC layer, the RT specific contact resistance of this Ni-Al-Ti contact measured by TLM-C method is (3 ± 1)×10-6 Ωcm2.

Erratum: “Formation mechanism of cerium oxide-doped indium oxide/Ag ohmic contacts on p-type GaN” [Appl. Phys. Lett. 89, 262115 (2006)]

2007 ◽  
Vol 90 (7) ◽  
pp. 079901
Author(s):  
Dong-Seok Leem ◽  
Tae-Wook Kim ◽  
Takhee Lee ◽  
Ja-Soon Jang ◽  
Young-Woo Ok ◽  
...  
Keyword(s):  
Cerium Oxide ◽  
Indium Oxide ◽  
Formation Mechanism ◽  
Ohmic Contacts ◽  
P Type
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