Dislocation-induced nonuniform interfacial reactions of Ti∕Al∕Mo∕Au ohmic contacts on AlGaN∕GaN heterostructure

Liang Wang; Fitih M. Mohammed; Ilesanmi Adesida

doi:10.1063/1.2081136

Dislocation-induced nonuniform interfacial reactions of Ti∕Al∕Mo∕Au ohmic contacts on AlGaN∕GaN heterostructure

Applied Physics Letters ◽

10.1063/1.2081136 ◽

2005 ◽

Vol 87 (14) ◽

pp. 141915 ◽

Cited By ~ 56

Author(s):

Liang Wang ◽

Fitih M. Mohammed ◽

Ilesanmi Adesida

Keyword(s):

Ohmic Contacts ◽

Interfacial Reactions ◽

Gan Heterostructure

Download Full-text

Interfacial reactions of titanium/gold ohmic contacts with Sn-doped β-Ga2O3

APL Materials ◽

10.1063/1.5054624 ◽

2019 ◽

Vol 7 (2) ◽

pp. 022524 ◽

Cited By ~ 9

Author(s):

Ming-Hsun Lee ◽

Rebecca L. Peterson

Keyword(s):

Ohmic Contacts ◽

Interfacial Reactions

Download Full-text

Study of Interface of Ohmic Contacts to AlGaN/GaN Heterostructure

Advances in Electrical and Electronic Engineering ◽

10.15598/aeee.v14i2.1584 ◽

2016 ◽

Vol 14 (2) ◽

Author(s):

Joanna Prazmowska ◽

Wojciech Piotr Macherzynski ◽

Regina Paszkiewicz

Keyword(s):

Ohmic Contacts ◽

Gan Heterostructure

Download Full-text

Effects of Interfacial Reactions on Electrical Properties of Ni Ohmic Contacts on n-Type 4H-SiC

Materials Science Forum ◽

10.4028/www.scientific.net/msf.389-393.897 ◽

2002 ◽

Vol 389-393 ◽

pp. 897-900 ◽

Cited By ~ 4

Author(s):

Sang Youn Han ◽

Nam Kyun Kim ◽

Eun Dong Kim ◽

Jong Lam Lee

Keyword(s):

Electrical Properties ◽

Ohmic Contacts ◽

Interfacial Reactions

Download Full-text

Interfacial Reactions of Nano-Structured Cu-Doped Indium Oxide/Indium Tin Oxide Ohmic Contacts to p-GaN

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2010.2280 ◽

2010 ◽

Vol 10 (5) ◽

pp. 3254-3259 ◽

Cited By ~ 1

Author(s):

Young Joon Yoon ◽

S. W. Chae ◽

B. K. Kim ◽

Min Joo Park ◽

Joon Seop Kwak

Keyword(s):

Indium Oxide ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Ohmic Contacts ◽

Interfacial Reactions

Download Full-text

High speed high power AlGaN/GaN heterostructure field effect transistors with improved ohmic contacts

Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors ◽

10.1109/iscs.1998.711681 ◽

1997 ◽

Author(s):

K.K. Chu ◽

M.J. Murphy ◽

J. Burm ◽

W.J. Schaff ◽

L.F. Eastman ◽

...

Keyword(s):

High Power ◽

Field Effect ◽

High Speed ◽

Ohmic Contacts ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

Download Full-text

Formation mechanism of Ohmic contacts on AlGaN∕GaN heterostructure: Electrical and microstructural characterizations

Journal of Applied Physics ◽

10.1063/1.2903482 ◽

2008 ◽

Vol 103 (9) ◽

pp. 093516 ◽

Cited By ~ 58

Author(s):

Liang Wang ◽

Fitih M. Mohammed ◽

Ilesanmi Adesida

Keyword(s):

Formation Mechanism ◽

Ohmic Contacts ◽

Gan Heterostructure

Download Full-text

Microstructural characterization of Au-free Si/Ti/Al/Cu ohmic contacts in an AlGaN/GaN heterostructure

Thin Solid Films ◽

10.1016/j.tsf.2015.02.065 ◽

2015 ◽

Vol 590 ◽

pp. 335-339 ◽

Cited By ~ 5

Author(s):

Seonno Yoon ◽

Jangwon Bang ◽

Yunwon Song ◽

Jungwoo Oh

Keyword(s):

Ohmic Contacts ◽

Microstructural Characterization ◽

Gan Heterostructure

Download Full-text

Interfacial reactions in nickel/titanium ohmic contacts to n-type silicon carbide

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.2126677 ◽

2005 ◽

Vol 23 (6) ◽

pp. 2530 ◽

Cited By ~ 10

Author(s):

Jae Hyun Park ◽

Paul H. Holloway

Keyword(s):

Silicon Carbide ◽

Ohmic Contacts ◽

Interfacial Reactions ◽

Nickel Titanium ◽

Type Silicon

Download Full-text

Formation mechanism of gold-based and gold-free ohmic contacts to AlGaN/GaN heterostructure field effect transistors

Journal of Applied Physics ◽

10.1063/1.4975473 ◽

2017 ◽

Vol 121 (6) ◽

pp. 065301 ◽

Cited By ~ 8

Author(s):

A. Shriki ◽

R. Winter ◽

Y. Calahorra ◽

Y. Kauffmann ◽

G. Ankonina ◽

...

Keyword(s):

Formation Mechanism ◽

Field Effect ◽

Ohmic Contacts ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

Download Full-text

High temperature induced failure in Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructure

Microelectronics Reliability ◽

10.1016/j.microrel.2011.09.021 ◽

2012 ◽

Vol 52 (2) ◽

pp. 434-438 ◽

Cited By ~ 10

Author(s):

Zhihua Dong ◽

Jinyan Wang ◽

C.P. Wen ◽

Shenghou Liu ◽

Rumin Gong ◽

...

Keyword(s):

High Temperature ◽

Ohmic Contacts ◽

Gan Heterostructure

Download Full-text