Formation mechanism of InxGa1−xAs ohmic contacts to n-type GaAs prepared by radio frequency sputtering

1994 ◽  
Vol 23 (9) ◽  
pp. 983-989 ◽  
Author(s):  
Chihiro J. Uchibori ◽  
Masayuki Okunishi ◽  
T. Oku ◽  
A. Otsuki ◽  
Naoki Ono ◽  
...  
1997 ◽  
Vol 117-118 ◽  
pp. 347-351 ◽  
Author(s):  
C.J. Uchibori ◽  
Y. Ohtani ◽  
T. Oku ◽  
N. Ono ◽  
M. Murakami

2000 ◽  
Vol 17 (11) ◽  
pp. 827-828 ◽  
Author(s):  
Zhen Cong-Mian ◽  
Liu Xue-Qin ◽  
Yan Zhi-Jun ◽  
Gong Heng-Xiang ◽  
Wang Yin-Yue

2011 ◽  
Vol 50 ◽  
pp. 01BF04 ◽  
Author(s):  
Ahmed Mohamed Ahmed Abd El-Razek Shamekh ◽  
Norio Tokuda ◽  
Takao Inokuma

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