Formation mechanism of InxGa1−xAs ohmic contacts to n-type GaAs prepared by radio frequency sputtering
1994 ◽
Vol 23
(9)
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pp. 983-989
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1998 ◽
Vol 27
(10)
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pp. L64-L67
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1997 ◽
Vol 117-118
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pp. 347-351
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2000 ◽
Vol 17
(11)
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pp. 827-828
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1983 ◽
Vol 1
(4)
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pp. 1795-1800
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2009 ◽
Vol 51
(7)
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pp. 1328-1331
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