Formation mechanism of gold-based and gold-free ohmic contacts to AlGaN/GaN heterostructure field effect transistors

A. Shriki; R. Winter; Y. Calahorra; Y. Kauffmann; G. Ankonina; M. Eizenberg; D. Ritter

doi:10.1063/1.4975473

Formation mechanism of gold-based and gold-free ohmic contacts to AlGaN/GaN heterostructure field effect transistors

Journal of Applied Physics ◽

10.1063/1.4975473 ◽

2017 ◽

Vol 121 (6) ◽

pp. 065301 ◽

Cited By ~ 8

Author(s):

A. Shriki ◽

R. Winter ◽

Y. Calahorra ◽

Y. Kauffmann ◽

G. Ankonina ◽

...

Keyword(s):

Formation Mechanism ◽

Field Effect ◽

Ohmic Contacts ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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High speed high power AlGaN/GaN heterostructure field effect transistors with improved ohmic contacts

Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors ◽

10.1109/iscs.1998.711681 ◽

1997 ◽

Author(s):

K.K. Chu ◽

M.J. Murphy ◽

J. Burm ◽

W.J. Schaff ◽

L.F. Eastman ◽

...

Keyword(s):

High Power ◽

Field Effect ◽

High Speed ◽

Ohmic Contacts ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Low Resistance Ti/Al/Mo/Au Ohmic Contacts for AlGaN/GaN Heterostructure Field Effect Transistors

phys stat sol (a) ◽

10.1002/1521-396x(200212)194:2<583::aid-pssa583>3.0.co;2-3 ◽

2002 ◽

Vol 194 (2) ◽

pp. 583-586 ◽

Cited By ~ 28

Author(s):

D. Selvanathan ◽

L. Zhou ◽

V. Kumar ◽

I. Adesida

Keyword(s):

Field Effect ◽

Ohmic Contacts ◽

Field Effect Transistors ◽

Low Resistance ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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High speed high power AlGaN/GaN heterostructure field effect transistors with improved ohmic contacts

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits CORNEL-97 ◽

10.1109/cornel.1997.649381 ◽

1997 ◽

Cited By ~ 5

Author(s):

Chu ◽

Murphy ◽

Burm ◽

Schaff ◽

Eastman ◽

...

Keyword(s):

High Power ◽

Field Effect ◽

High Speed ◽

Ohmic Contacts ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Self-heating and the temperature dependence of the dc characteristics of GaN heterostructure field effect transistors

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.2172921 ◽

2006 ◽

Vol 24 (3) ◽

pp. 624-628 ◽

Cited By ~ 40

Author(s):

S. P. McAlister ◽

J. A. Bardwell ◽

S. Haffouz ◽

H. Tang

Keyword(s):

Temperature Dependence ◽

Field Effect ◽

Field Effect Transistors ◽

Self Heating ◽

Dc Characteristics ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method

AIP Advances ◽

10.1063/5.0056337 ◽

2021 ◽

Vol 11 (8) ◽

pp. 085204

Author(s):

Yongxiong Yang ◽

Zhaojun Lin ◽

Mingyan Wang ◽

Heng Zhou ◽

Yang Liu ◽

...

Keyword(s):

Monte Carlo ◽

Monte Carlo Method ◽

Field Effect ◽

Field Effect Transistors ◽

Coulomb Field ◽

The Monte Carlo Method ◽

Polarization Coulomb Field Scattering ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Polarization Coulomb field scattering with the electron systems in AlGaN/GaN heterostructure field-effect transistors

AIP Advances ◽

10.1063/5.0012615 ◽

2020 ◽

Vol 10 (7) ◽

pp. 075212

Author(s):

Guangyuan Jiang ◽

Yuanjie Lv ◽

Zhaojun Lin ◽

Yongxiong Yang ◽

Yang Liu ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Coulomb Field ◽

Electron Systems ◽

Polarization Coulomb Field Scattering ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Impact of dopants in GaN on the formation of two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors

Applied Physics A ◽

10.1007/s003390100978 ◽

2002 ◽

Vol 75 (3) ◽

pp. 387-389 ◽

Cited By ~ 3

Author(s):

R.M. Chu ◽

Y.D. Zheng ◽

Y.G. Zhou ◽

P. Han ◽

B. Shen ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Heterostructure Field Effect Transistors ◽

Dimensional Electron Gas ◽

Gan Heterostructure

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Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors

Journal of Applied Physics ◽

10.1063/1.4891258 ◽

2014 ◽

Vol 116 (4) ◽

pp. 044507 ◽

Cited By ~ 29

Author(s):

Chongbiao Luan ◽

Zhaojun Lin ◽

Yuanjie Lv ◽

Jingtao Zhao ◽

Yutang Wang ◽

...

Keyword(s):

Theoretical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Coulomb Field ◽

Polarization Coulomb Field Scattering ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements

physica status solidi (c) ◽

10.1002/pssc.201100408 ◽

2012 ◽

Vol 9 (3-4) ◽

pp. 911-914 ◽

Cited By ~ 4

Author(s):

Martin Mikulics ◽

Hilde Hardtdegen ◽

Andreas Winden ◽

Alfred Fox ◽

Michel Marso ◽

...

Keyword(s):

Residual Strain ◽

Field Effect ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Nonalloyed InGaAs/GaAs ohmic contacts for self‐aligned ion implanted GaAs heterostructure field effect transistors

Applied Physics Letters ◽

10.1063/1.108150 ◽

1992 ◽

Vol 61 (20) ◽

pp. 2455-2457 ◽

Cited By ~ 9

Author(s):

J. H. Huang ◽

J. K. Abrokwah ◽

W. J. Ooms

Keyword(s):

Field Effect ◽

Ohmic Contacts ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors ◽

Ion Implanted

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