High temperature induced failure in Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructure

2012 ◽  
Vol 52 (2) ◽  
pp. 434-438 ◽  
Author(s):  
Zhihua Dong ◽  
Jinyan Wang ◽  
C.P. Wen ◽  
Shenghou Liu ◽  
Rumin Gong ◽  
...  
Keyword(s):  
High Temperature ◽  
Ohmic Contacts ◽  
Gan Heterostructure

Characteristics and aging of SiC MOSFETs operated at very high temperatures

2014 ◽  
Vol 1693 ◽  
Author(s):  
Dean P. Hamilton ◽  
Michael R. Jennings ◽  
Craig A. Fisher ◽  
Yogesh K. Sharma ◽  
Stephen J. York ◽  
...  
Keyword(s):  
High Temperature ◽  
High Temperatures ◽  
Threshold Voltage ◽  
Thermal Aging ◽  
Ohmic Contacts ◽  
Stress Tests ◽  
Temperature Capability ◽  
Temperature Constant ◽  
Voltage Management ◽  
Very High

ABSTRACTSilicon carbide power devices are purported to be capable of operating at very high temperatures. Current commercially available SiC MOSFETs from a number of manufacturers have been evaluated to understand and quantify the aging processes and temperature dependencies that occur when operated up to 350°C. High temperature constant positive bias stress tests demonstrated a two times increase in threshold voltage from the original value for some device types, which was maintained indefinitely but could be corrected with a long negative gate bias. The threshold voltages were found to decrease close to zero and the on-state resistances increased quite linearly to approximately five or six times their room temperature values. Long term thermal aging of the dies appears to demonstrate possible degradation of the ohmic contacts. This appears as a rectifying response in the I-V curves at low drain-source bias. The high temperature capability of the latest generations of these devices has been proven independently; provided that threshold voltage management is implemented, the devices are capable of being operated and are free from the effects of thermal aging for at least 70 hours cumulative at 300°C.

scholarly journals Influence of high-temperature AlN interlayer on the electrical properties of AlGaN/GaN heterostructure and HEMTs

2009 ◽  
Vol 58 (7) ◽  
pp. 4925
Author(s):  
Ni Jin-Yu ◽  
Hao Yue ◽  
Zhang Jin-Cheng ◽  
Duan Huan-Tao ◽  
Zhang Jin-Feng
Keyword(s):  
High Temperature ◽  
Electrical Properties ◽  
Gan Heterostructure

Influence of Ni and Nb thickness on low specific contact resistance and high-temperature reliability of ohmic contacts to 4H-SiC

2019 ◽  
Vol 58 (11) ◽  
pp. 116501 ◽  
Author(s):  
Vuong Van Cuong ◽  
Seiji Ishikawa ◽  
Tomonori Maeda ◽  
Hiroshi Sezaki ◽  
Satoshi Yasuno ◽  
...  
Keyword(s):  
High Temperature ◽  
Contact Resistance ◽  
Ohmic Contacts ◽  
Specific Contact Resistance ◽  
Specific Contact

scholarly journals Synthesis of Ti3AuC2, Ti3Au2C2 and Ti3IrC2 by noble metal substitution reaction in Ti3SiC2 for high-temperature-stable Ohmic contacts to SiC

2017 ◽  
Vol 16 (8) ◽  
pp. 814-818 ◽  
Author(s):  
Hossein Fashandi ◽  
Martin Dahlqvist ◽  
Jun Lu ◽  
Justinas Palisaitis ◽  
Sergei I. Simak ◽  
...  
Keyword(s):  
High Temperature ◽  
Noble Metal ◽  
Substitution Reaction ◽  
Ohmic Contacts ◽  
Metal Substitution

Stability of alloyed and nonalloyed ohmic contacts to n-type GaN at high temperature in air

2017 ◽  
Vol 56 (12) ◽  
pp. 126502
Author(s):  
Shirong Zhao ◽  
Jianyi Gao ◽  
Shuo Wang ◽  
Hongen Xie ◽  
Fernando A. Ponce ◽  
...  
Keyword(s):  
High Temperature ◽  
Ohmic Contacts

Realization of improved metallization-Ti/Al/Ti/W/Au ohmic contacts to n-GaN for high temperature application

2005 ◽  
Vol 2 (7) ◽  
pp. 2536-2539 ◽  
Author(s):  
A. Motayed ◽  
A.V. Davydov ◽  
W. J. Boettinger ◽  
D. Josell ◽  
A.J. Shapiro ◽  
...  
Keyword(s):  
High Temperature ◽  
Ohmic Contacts ◽  
High Temperature Application ◽  
Temperature Application

High Temperature Reliability of Refractory Metal Ohmic Contacts to Diamond

1992 ◽  
Vol 139 (7) ◽  
pp. 2001-2004 ◽  
Author(s):  
M. Roser ◽  
C. A. Hewett ◽  
K. L. Moazed ◽  
J. R. Zeidler
Keyword(s):  
High Temperature ◽  
Refractory Metal ◽  
Ohmic Contacts

Investigation of Factors Limiting the High Temperature Stability of W/WC/TaC/SiC Ohmic Contacts to n-type 6H-SiC

2000 ◽  
Vol 640 ◽  
Author(s):  
T. Jang ◽  
B. Odekirk ◽  
L. M. Porter
Keyword(s):  
High Temperature ◽  
Ohmic Contacts ◽  
Temperature Stability ◽  
Atomic Scale ◽  
Specific Contact Resistance ◽  
High Temperature Stability ◽  
Specific Contact ◽  
Operating Limits ◽  
Metallurgical Reactions ◽  
Metal Layers

ABSTRACTThe electrical properties and thermal stability of TaC ohmic contacts with W/WC overlayers were investigated on n-type 6H-SiC (0001) substrates. The specific contact resistance (SCR) was measured after annealing at 600 °C and 1000 °C for 50 ∼ 1000 h. The SCRs (3.0 ∼ 3.6 ×10−5 Ωcm2) of contacts annealed at 600 °C for 1000 h remained constant within the experimental error. Significant increases in the SCR were not observed until the samples were annealed at 1000 °C for several hundred hours.No reaction of the film with the SiC substrate was observed after annealing at 600 °C for 1000 h; however, atomic-scale reactions appeared to be concentrated adjacent to grain boundaries in the reacted film. From Auger depth profiles, it was found that W and WC reacted to form W2C on TaC after annealing.According to SIMS analysis, after annealing at 1000 °C for 600 h, small but measurable changes in the electrical characteristics were associated with O incorporation at the interface between TaC and SiC. Investigation of the W/WC/TaC/SiC interface by TEM indicated that a reaction between the metal layers had occurred, but there was no observed reaction with the SiC substrate. After annealing for 1000 h, substantial changes in the contacts were observed. The findings indicate that both oxidation and metallurgical reactions have important implications on the current operating limits for SiC high temperature devices.

Thermally stable transparent Ru-Si-O Schottky contacts for n-type GaN and AlGaN

2004 ◽  
Vol 831 ◽  
Author(s):  
E. Kaminska ◽  
A. Piotrowska ◽  
K. Golaszewska ◽  
R. Lukasiewicz ◽  
A. Szczesny ◽  
...  
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
High Power ◽  
Schottky Contacts ◽  
Electrical Characteristics ◽  
Thermal Reliability ◽  
Uv Detectors ◽  
Gate Electrodes ◽  
Gan Hemt ◽  
Gan Heterostructure

ABSTRACTWe have developed the deposition and studied the electrical characteristics and thermal reliability of Ru-based contacts on n- type GaN as well as on AlGaN/GaN heterostructure. Amorphous, conducting and transparent RuSiO4 contacts with their extremely low reverse currents and thermal stability up to 900°C, show great potential for use as Schottky contacts to n-type GaN and gate electrodes for AlGaN/GaN HEMT in high temperature, high power applications as well as in UV detectors.

High-Temperature Operation of Normally Off-Mode AlGaN/GaN Heterostructure Field-Effect Transistors with p-GaN Gate

2011 ◽  
Vol 50 (1S1) ◽  
pp. 01AD03 ◽  
Author(s):  
Takayuki Sugiyama ◽  
Hiroshi Amano ◽  
Daisuke Iida ◽  
Motoaki Iwaya ◽  
Satoshi Kamiyama ◽  
...  
Keyword(s):  
High Temperature ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure ◽  
High Temperature Operation
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