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Effects of Si passivation on Ge metal-insulator-semiconductor interface properties and inversion-layer hole mobility
Applied Physics Letters
◽
10.1063/1.2899631
◽
2008
◽
Vol 92
(11)
◽
pp. 113511
◽
Cited By ~ 42
Author(s):
Noriyuki Taoka
◽
Masatomi Harada
◽
Yoshimi Yamashita
◽
Toyoji Yamamoto
◽
Naoharu Sugiyama
◽
...
Keyword(s):
Inversion Layer
◽
Hole Mobility
◽
Interface Properties
◽
Semiconductor Interface
◽
Metal Insulator
◽
Metal Insulator Semiconductor
◽
And Inversion
Download Full-text
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References
Accurate evaluation of Ge metal—insulator—semiconductor interface properties
Journal of Applied Physics
◽
10.1063/1.3633517
◽
2011
◽
Vol 110
(6)
◽
pp. 064506
◽
Cited By ~ 11
Author(s):
Noriyuki Taoka
◽
Keiji Ikeda
◽
Wataru Mizubayashi
◽
Yukinori Morita
◽
Shinji Migita
◽
...
Keyword(s):
Interface Properties
◽
Semiconductor Interface
◽
Metal Insulator
◽
Metal Insulator Semiconductor
◽
Accurate Evaluation
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Ultra-Strong Mode Confinement at Semishell Metal/insulator/semiconductor Interface for Nanolaser
Journal of Luminescence
◽
10.1016/j.jlumin.2021.118242
◽
2021
◽
pp. 118242
Author(s):
Ru Wang
◽
Chunxiang Xu
◽
Daotong You
◽
Xiaoxuan Wang
◽
Jinping Chen
◽
...
Keyword(s):
Semiconductor Interface
◽
Metal Insulator
◽
Metal Insulator Semiconductor
◽
Strong Mode
Download Full-text
Characteristics of the low-temperature-deposited SiO2-Ga0.47In0.53As metal/insulator/semiconductor interface
Thin Solid Films
◽
10.1016/0040-6090(84)90285-2
◽
1984
◽
Vol 117
(3)
◽
pp. 173-190
◽
Cited By ~ 28
Author(s):
Peter D. Gardner
◽
S.Yegna Narayan
◽
Yong-Hoon Yun
Keyword(s):
Low Temperature
◽
Semiconductor Interface
◽
Metal Insulator
◽
Metal Insulator Semiconductor
Download Full-text
Interface properties of HgCdTe metal‐insulator‐semiconductor capacitors
Applied Physics Letters
◽
10.1063/1.100985
◽
1989
◽
Vol 54
(3)
◽
pp. 265-267
◽
Cited By ~ 32
Author(s):
M. J. Yang
◽
C. H. Yang
◽
M. A. Kinch
◽
J. D. Beck
Keyword(s):
Interface Properties
◽
Metal Insulator
◽
Metal Insulator Semiconductor
Download Full-text
Electron trapping and inversion layer formation in photoexcited metal-insulator-poly(3-hexylthiophene) capacitors
Applied Physics Letters
◽
10.1063/1.2382727
◽
2006
◽
Vol 89
(18)
◽
pp. 183512
◽
Cited By ~ 22
Author(s):
D. M. Taylor
◽
J. A. Drysdale
◽
I. Torres
◽
O. Fernández
Keyword(s):
Inversion Layer
◽
Electron Trapping
◽
Layer Formation
◽
Metal Insulator
◽
And Inversion
Download Full-text
Importance of minority carrier response in accurate characterization of Ge metal-insulator-semiconductor interface traps
Journal of Applied Physics
◽
10.1063/1.3204025
◽
2009
◽
Vol 106
(4)
◽
pp. 044506
◽
Cited By ~ 13
Author(s):
Noriyuki Taoka
◽
Toyoji Yamamoto
◽
Masatomi Harada
◽
Yoshimi Yamashita
◽
Naoharu Sugiyama
◽
...
Keyword(s):
Minority Carrier
◽
Interface Traps
◽
Semiconductor Interface
◽
Metal Insulator
◽
Metal Insulator Semiconductor
Download Full-text
Interface properties and capacitance‐voltage behavior of indium phosphide metal‐insulator‐semiconductor prepared by plasma‐assisted oxidation
Journal of Applied Physics
◽
10.1063/1.347482
◽
1991
◽
Vol 69
(11)
◽
pp. 7918-7920
◽
Cited By ~ 5
Author(s):
H. Lim
◽
J. A. Baglio
◽
N. DeCola
◽
H. L. Park
◽
J. I. Lee
◽
...
Keyword(s):
Indium Phosphide
◽
Interface Properties
◽
Metal Insulator
◽
Metal Insulator Semiconductor
◽
Capacitance Voltage
Download Full-text
Response to ‘‘Comment on ‘Metal‐insulator‐semiconductor inversion layer solar cells by using rapid thermal processing’ ’’ [Appl. Phys. Lett. 68, 2905 (1996)]
Applied Physics Letters
◽
10.1063/1.116328
◽
1996
◽
Vol 68
(20)
◽
pp. 2906-2906
Author(s):
A. Beyer
◽
G. Ebest
◽
R. Reich
Keyword(s):
Solar Cells
◽
Thermal Processing
◽
Inversion Layer
◽
Rapid Thermal Processing
◽
Metal Insulator
◽
Metal Insulator Semiconductor
Download Full-text
Film and interface properties of epitaxial metal/insulator/semiconductor systems formed by ionized cluster beam deposition
Surface Science
◽
10.1016/0039-6028(86)90866-6
◽
1986
◽
Vol 168
(1-3)
◽
pp. 365-375
◽
Cited By ~ 11
Author(s):
I. Yamada
◽
H. Usui
◽
H. Inokawa
◽
T. Takagi
Keyword(s):
Cluster Beam
◽
Interface Properties
◽
Metal Insulator
◽
Metal Insulator Semiconductor
◽
Cluster Beam Deposition
◽
Beam Deposition
Download Full-text
Interface properties of plasma‐enhanced chemical vapor deposited SiOxNy/n‐GaAs metal‐insulator‐semiconductor system
Journal of Applied Physics
◽
10.1063/1.336765
◽
1986
◽
Vol 59
(11)
◽
pp. 3778-3782
◽
Cited By ~ 5
Author(s):
T. Y. Chou
◽
M. S. Lin
Keyword(s):
Chemical Vapor
◽
Interface Properties
◽
Metal Insulator
◽
Metal Insulator Semiconductor
◽
Chemical Vapor Deposited
◽
Semiconductor System
Download Full-text
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