Importance of minority carrier response in accurate characterization of Ge metal-insulator-semiconductor interface traps

Noriyuki Taoka; Toyoji Yamamoto; Masatomi Harada; Yoshimi Yamashita; Naoharu Sugiyama; Shinichi Takagi

doi:10.1063/1.3204025

Importance of minority carrier response in accurate characterization of Ge metal-insulator-semiconductor interface traps

Journal of Applied Physics ◽

10.1063/1.3204025 ◽

2009 ◽

Vol 106 (4) ◽

pp. 044506 ◽

Cited By ~ 13

Author(s):

Noriyuki Taoka ◽

Toyoji Yamamoto ◽

Masatomi Harada ◽

Yoshimi Yamashita ◽

Naoharu Sugiyama ◽

...

Keyword(s):

Minority Carrier ◽

Interface Traps ◽

Semiconductor Interface ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Characterization of interface electrical properties in SiO2/InSb metal/insulator/semiconductor structures prepared by plasma-enhanced chemical vapour deposition

Thin Solid Films ◽

10.1016/0040-6090(87)90317-8 ◽

1987 ◽

Vol 148 (3) ◽

pp. 243-250 ◽

Cited By ~ 9

Author(s):

K.G. Germanova ◽

E.P. Valcheva

Keyword(s):

Electrical Properties ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures

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Electrical & Physical Characterization of Silicon-Organic Asymmetrical Metal Insulator Semiconductor Capacitive Test Structure

Silicon ◽

10.1007/s12633-020-00939-8 ◽

2021 ◽

Author(s):

Rajesh Agarwal

Keyword(s):

Test Structure ◽

Physical Characterization ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Ultra-Strong Mode Confinement at Semishell Metal/insulator/semiconductor Interface for Nanolaser

Journal of Luminescence ◽

10.1016/j.jlumin.2021.118242 ◽

2021 ◽

pp. 118242

Author(s):

Ru Wang ◽

Chunxiang Xu ◽

Daotong You ◽

Xiaoxuan Wang ◽

Jinping Chen ◽

...

Keyword(s):

Semiconductor Interface ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Strong Mode

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Fabrication and characterization of metal/insulator/semiconductor structures based on TiO2 and TiO2/SiO2 thin films prepared by low-temperature arc vapor deposition

Electronic Materials Letters ◽

10.1007/s13391-013-3244-6 ◽

2014 ◽

Vol 10 (3) ◽

pp. 579-584 ◽

Cited By ~ 4

Author(s):

Kumar Shubham ◽

P. Chakrabarti

Keyword(s):

Thin Films ◽

Low Temperature ◽

Vapor Deposition ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Fabrication And Characterization

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Interface trap characterization of atomic layer deposition Al2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies

Journal of Applied Physics ◽

10.1063/1.4808093 ◽

2013 ◽

Vol 113 (20) ◽

pp. 204505 ◽

Cited By ~ 32

Author(s):

Christine M. Jackson ◽

Aaron R. Arehart ◽

Emre Cinkilic ◽

Brian McSkimming ◽

James S. Speck ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Deep Level ◽

Atomic Layer ◽

Interface Trap ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Layer Deposition

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Characterization of metal–ferroelectric–metal–insulator–semiconductor structures using ferroelectric Al-doped HfO2 thin films prepared by atomic-layer deposition with different O3 doses

Japanese Journal of Applied Physics ◽

10.7567/1347-4065/ab2c62 ◽

2019 ◽

Vol 58 (7) ◽

pp. 070907 ◽

Cited By ~ 3

Author(s):

So-Yeong Na ◽

So-Jung Yoon ◽

Seung-Youl Kang ◽

Seung-Eon Moon ◽

Sung-Min Yoon

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Layer Deposition

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Measurement and characterization of interface state tunneling in metal-insulator-semiconductor structures

Solid-State Electronics ◽

10.1016/0038-1101(86)90140-1 ◽

1986 ◽

Vol 29 (6) ◽

pp. 597-606 ◽

Cited By ~ 8

Author(s):

Sanjay Jain ◽

Walter E. Dahlke

Keyword(s):

Interface State ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures

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Characterization of Al 2 O 3 /GaN/AlGaN/GaN metal—insulator—semiconductor high electron mobility transistors with different gate recess depths

Chinese Physics B ◽

10.1088/1674-1056/20/2/027304 ◽

2011 ◽

Vol 20 (2) ◽

pp. 027304 ◽

Cited By ~ 9

Author(s):

Xiao-Hua Ma ◽

Cai-Yuan Pan ◽

Li-Yuan Yang ◽

Hui-You Yu ◽

Ling Yang ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Electron Mobility Transistors ◽

Gate Recess

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Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al[sub 2]O[sub 3] and ZnO for Transparent Thin Film Transistor Applications

Journal of The Electrochemical Society ◽

10.1149/1.3421680 ◽

2010 ◽

Vol 157 (7) ◽

pp. H727 ◽

Cited By ~ 7

Author(s):

Sung-Min Yoon ◽

Sang-Hee Ko Park ◽

Chun-Won Byun ◽

Shin-Hyuk Yang ◽

Chi-Sun Hwang

Keyword(s):

Thin Film ◽

Thin Film Transistor ◽

Electrical Characterization ◽

Atomic Layer ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Transparent Thin Film Transistor

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Characteristics of the low-temperature-deposited SiO2-Ga0.47In0.53As metal/insulator/semiconductor interface

Thin Solid Films ◽

10.1016/0040-6090(84)90285-2 ◽

1984 ◽

Vol 117 (3) ◽

pp. 173-190 ◽

Cited By ~ 28

Author(s):

Peter D. Gardner ◽

S.Yegna Narayan ◽

Yong-Hoon Yun

Keyword(s):

Low Temperature ◽

Semiconductor Interface ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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