Interface properties and capacitance‐voltage behavior of indium phosphide metal‐insulator‐semiconductor prepared by plasma‐assisted oxidation

H. Lim; J. A. Baglio; N. DeCola; H. L. Park; J. I. Lee; K. N. Kang

doi:10.1063/1.347482

Interface properties and capacitance‐voltage behavior of indium phosphide metal‐insulator‐semiconductor prepared by plasma‐assisted oxidation

Journal of Applied Physics ◽

10.1063/1.347482 ◽

1991 ◽

Vol 69 (11) ◽

pp. 7918-7920 ◽

Cited By ~ 5

Author(s):

H. Lim ◽

J. A. Baglio ◽

N. DeCola ◽

H. L. Park ◽

J. I. Lee ◽

...

Keyword(s):

Indium Phosphide ◽

Interface Properties ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Capacitance Voltage

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Capacitance-voltage measurements on a p-type InSb metal/insulator/semiconductor structure with Si3N4 as the insulator

Thin Solid Films ◽

10.1016/0040-6090(89)90001-1 ◽

1989 ◽

Vol 168 (2) ◽

pp. 157-163 ◽

Cited By ~ 3

Author(s):

B. Ullrich ◽

F. Kuchar ◽

R. Meisels ◽

F. Olcaytug ◽

A. Jachimowicz

Keyword(s):

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Capacitance Voltage ◽

P Type

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Time‐dependent response of interface states in indium phosphide metal–insulator–semiconductor capacitors investigated with constant‐capacitance deep‐level transient spectroscopy

Journal of Applied Physics ◽

10.1063/1.332582 ◽

1983 ◽

Vol 54 (7) ◽

pp. 4014-4021 ◽

Cited By ~ 66

Author(s):

P. van Staa ◽

H. Rombach ◽

R. Kassing

Keyword(s):

Indium Phosphide ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Interface States ◽

Time Dependent ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Transient Spectroscopy

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ChemInform Abstract: Silicon Dioxide with a Silicon Interfacial Layer as an Insulating Gate for Highly Stable Indium Phosphide Metal-Insulator-Semiconductor Field Effect Transistors

ChemInform ◽

10.1002/chin.199134272 ◽

2010 ◽

Vol 22 (34) ◽

pp. no-no

Author(s):

M. SHOKRANI ◽

V. J. KAPOOR

Keyword(s):

Indium Phosphide ◽

Silicon Dioxide ◽

Interfacial Layer ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Effect of F doping on capacitance–voltage characteristics of SiCOH low- k films metal–insulator–semiconductor structure

Chinese Physics B ◽

10.1088/1674-1056/19/5/057701 ◽

2010 ◽

Vol 19 (5) ◽

pp. 057701 ◽

Cited By ~ 1

Author(s):

Ye Chao ◽

Ning Zhao-Yuan

Keyword(s):

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Capacitance Voltage ◽

Low K

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Controllable capacitance–voltage hysteresis width in the aluminum–cerium-dioxide–silicon metal–insulator–semiconductor structure: Application to nonvolatile memory devices without ferroelectrics

Applied Physics Letters ◽

10.1063/1.126199 ◽

2000 ◽

Vol 76 (14) ◽

pp. 1881-1883 ◽

Cited By ~ 29

Author(s):

L. Kim ◽

J. Kim ◽

D. Jung ◽

Y. Roh

Keyword(s):

Nonvolatile Memory ◽

Cerium Dioxide ◽

Semiconductor Structure ◽

Memory Devices ◽

Metal Insulator ◽

Hysteresis Width ◽

Metal Insulator Semiconductor ◽

Capacitance Voltage ◽

Nonvolatile Memory Devices ◽

Voltage Hysteresis

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Enhancement of the Stability of Capacitance -- Voltage Characteristics of Hg1-xZnxTe -- Based Metal-Insulator-Semiconductor Capacitors by Voltage Annealing

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.l1244 ◽

2004 ◽

Vol 43 (No. 10A) ◽

pp. L1244-L1246

Author(s):

Young-Hun Kim ◽

Sung-Hoon Kim

Keyword(s):

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Capacitance Voltage ◽

The Stability

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Plasma‐deposited germanium nitride gate insulators for indium phosphide metal‐insulator‐semiconductor field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.348508 ◽

1991 ◽

Vol 69 (6) ◽

pp. 3616-3622 ◽

Cited By ~ 14

Author(s):

Gregory A. Johnson ◽

Vik J. Kapoor

Keyword(s):

Indium Phosphide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Gate Insulators

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A self-consistent technique for the analysis of the temperature dependence of current–voltage and capacitance–voltage characteristics of a tunnel metal-insulator-semiconductor structure

Journal of Applied Physics ◽

10.1063/1.366386 ◽

1997 ◽

Vol 82 (10) ◽

pp. 5217-5226 ◽

Cited By ~ 88

Author(s):

P. Cova ◽

A. Singh ◽

R. A. Masut

Keyword(s):

Temperature Dependence ◽

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Current Voltage ◽

Capacitance Voltage ◽

Self Consistent

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Characterization of a-Si:H based metal/insulator/semiconductor structures by feedback charge capacitance-voltage measurements and charge deep-level transient spectroscopy

Journal of Applied Physics ◽

10.1063/1.366247 ◽

1997 ◽

Vol 82 (9) ◽

pp. 4372-4377 ◽

Cited By ~ 7

Author(s):

I. Thurzo ◽

S. Teramura ◽

R. Durny ◽

V. Nádaždy ◽

M. Kumeda ◽

...

Keyword(s):

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Capacitance Voltage ◽

Transient Spectroscopy ◽

Charge Capacitance

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Capacitance-voltage characteristics of amorphous silicon based metal-insulator-semiconductor structure

Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium ◽

10.1109/ugim.1991.148130 ◽

2002 ◽

Author(s):

J.S. Choi ◽

G.W. Neudeck

Keyword(s):

Amorphous Silicon ◽

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Capacitance Voltage ◽

Silicon Based

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