Electron trapping and inversion layer formation in photoexcited metal-insulator-poly(3-hexylthiophene) capacitors

D. M. Taylor; J. A. Drysdale; I. Torres; O. Fernández

doi:10.1063/1.2382727

Electron trapping and inversion layer formation in photoexcited metal-insulator-poly(3-hexylthiophene) capacitors

Applied Physics Letters ◽

10.1063/1.2382727 ◽

2006 ◽

Vol 89 (18) ◽

pp. 183512 ◽

Cited By ~ 22

Author(s):

D. M. Taylor ◽

J. A. Drysdale ◽

I. Torres ◽

O. Fernández

Keyword(s):

Inversion Layer ◽

Electron Trapping ◽

Layer Formation ◽

Metal Insulator ◽

And Inversion

Download Full-text

Photogenerated minority carrier trapping and inversion layer formation in polymer field-effect structures

IEEE Transactions on Dielectrics and Electrical Insulation ◽

10.1109/tdei.2006.1714935 ◽

2006 ◽

Vol 13 (5) ◽

pp. 1093-1100 ◽

Cited By ~ 1

Author(s):

O. Fernandez ◽

D.M. Taylor ◽

J.A. Drysdale ◽

D.M. Ellis

Keyword(s):

Field Effect ◽

Minority Carrier ◽

Inversion Layer ◽

Layer Formation ◽

Carrier Trapping ◽

And Inversion

Download Full-text

Photogenerated minority carrier trapping and inversion layer formation in polymer field-effect structures

IEEE Transactions on Dielectrics and Electrical Insulation ◽

10.1109/tdei.2006.247837 ◽

2006 ◽

Vol 13 (5) ◽

pp. 1093-1100 ◽

Cited By ~ 4

Author(s):

Fernandez ◽

Taylor ◽

Drysdale ◽

Ellis

Keyword(s):

Field Effect ◽

Minority Carrier ◽

Inversion Layer ◽

Layer Formation ◽

Carrier Trapping ◽

And Inversion

Download Full-text

Impedance and Microwave Reflectivity Measurements on n‐Si in 1M LiCl / Methanol: I . Depletion and Inversion Layer Formation

Journal of The Electrochemical Society ◽

10.1149/1.2050071 ◽

1995 ◽

Vol 142 (8) ◽

pp. 2665-2669 ◽

Cited By ~ 14

Author(s):

G. Schlichthörl ◽

L. M. Peter

Keyword(s):

Inversion Layer ◽

Layer Formation ◽

And Inversion

Download Full-text

Effects of Si passivation on Ge metal-insulator-semiconductor interface properties and inversion-layer hole mobility

Applied Physics Letters ◽

10.1063/1.2899631 ◽

2008 ◽

Vol 92 (11) ◽

pp. 113511 ◽

Cited By ~ 42

Author(s):

Noriyuki Taoka ◽

Masatomi Harada ◽

Yoshimi Yamashita ◽

Toyoji Yamamoto ◽

Naoharu Sugiyama ◽

...

Keyword(s):

Inversion Layer ◽

Hole Mobility ◽

Interface Properties ◽

Semiconductor Interface ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

And Inversion

Download Full-text

Electron trapping in metal-insulator-semiconductor structures on n-GaN with SiO2 and Si3N4 dielectrics

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1806439 ◽

2004 ◽

Vol 22 (6) ◽

pp. 2379-2383 ◽

Cited By ~ 24

Author(s):

Choelhwyi Bae ◽

Cristiano Krug ◽

Gerald Lucovsky

Keyword(s):

Electron Trapping ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures

Download Full-text

Structure of the Mixed Layer and Inversion Layer Associated with Patterns of Mesoscale Cellular Convection During AMTEX 75

Journal of the Atmospheric Sciences ◽

10.1175/1520-0469(1978)035<2281:sotmla>2.0.co;2 ◽

1978 ◽

Vol 35 (12) ◽

pp. 2281-2301 ◽

Cited By ~ 33

Author(s):

Ernest M. Agee ◽

Francis E. Lomax

Keyword(s):

Mixed Layer ◽

Inversion Layer ◽

And Inversion

Download Full-text

Extraction of MOSFET threshold voltage, series resistance, effective channel length, and inversion layer mobility from small-signal channel conductance measurement

IEEE Transactions on Electron Devices ◽

10.1109/16.974720 ◽

2001 ◽

Vol 48 (12) ◽

pp. 2870-2874 ◽

Cited By ~ 17

Author(s):

F.C.J. Kong ◽

Y.T. Yeow ◽

Z.Q. Yao

Keyword(s):

Threshold Voltage ◽

Series Resistance ◽

Inversion Layer ◽

Channel Length ◽

Small Signal ◽

Channel Conductance ◽

Conductance Measurement ◽

Signal Channel ◽

And Inversion ◽

Effective Channel

Download Full-text

A note on the equality of bulk and inversion-layer capacitance at threshold

Solid-State Electronics ◽

10.1016/0038-1101(87)90146-8 ◽

1987 ◽

Vol 30 (2) ◽

pp. 181-183 ◽

Cited By ~ 1

Author(s):

R.M. Warner

Keyword(s):

Inversion Layer ◽

And Inversion

Download Full-text

Role of inversion layer formation in producing low effective surface recombination velocities at Si/liquid contacts

Applied Physics Letters ◽

10.1063/1.1318935 ◽

2000 ◽

Vol 77 (16) ◽

pp. 2566-2568 ◽

Cited By ~ 19

Author(s):

William J. Royea ◽

David J. Michalak ◽

Nathan S. Lewis

Keyword(s):

Inversion Layer ◽

Surface Recombination ◽

Layer Formation ◽

Effective Surface

Download Full-text

Structure and Performance of Polycrystalline Thin Film Solar Cells

MRS Proceedings ◽

10.1557/proc-10-297 ◽

1981 ◽

Vol 10 ◽

Cited By ~ 2

Author(s):

Edward S. Yang

Keyword(s):

Thin Film ◽

Solar Cells ◽

Low Temperature ◽

Inversion Layer ◽

Thin Film Solar Cells ◽

Polycrystalline Thin Film ◽

Metal Insulator ◽

Carrier Recombination ◽

Barrier Metal ◽

And Performance

A review of recent advances in polycrystalline thin film solar cells is presented. A comparison of the fundamental mechanisms and the performance of heterojunction, Schottky barrier, metal-insulator-semiconductor, inversion layer and p-n junction devices is given. The emphasis is placed on devices fabricated by low temperature processes, and the influence of grain boundaries on carrier recombination and transport is discussed.

Download Full-text