Interface properties of plasma‐enhanced chemical vapor deposited SiOxNy/n‐GaAs metal‐insulator‐semiconductor system

T. Y. Chou; M. S. Lin

doi:10.1063/1.336765

Interface properties of plasma‐enhanced chemical vapor deposited SiOxNy/n‐GaAs metal‐insulator‐semiconductor system

Journal of Applied Physics ◽

10.1063/1.336765 ◽

1986 ◽

Vol 59 (11) ◽

pp. 3778-3782 ◽

Cited By ~ 5

Author(s):

T. Y. Chou ◽

M. S. Lin

Keyword(s):

Chemical Vapor ◽

Interface Properties ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Chemical Vapor Deposited ◽

Semiconductor System

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Structure and composition of interfacial silicon oxide layer in chemical vapor deposited Y2O3‐SiO2bilayer dielectrics for metal‐insulator‐semiconductor devices

Journal of Applied Physics ◽

10.1063/1.357377 ◽

1994 ◽

Vol 76 (7) ◽

pp. 4215-4224 ◽

Cited By ~ 17

Author(s):

R. N. Sharma ◽

A. C. Rastogi

Keyword(s):

Oxide Layer ◽

Silicon Oxide ◽

Semiconductor Devices ◽

Chemical Vapor ◽

Metal Insulator ◽

Silicon Oxide Layer ◽

Metal Insulator Semiconductor ◽

Chemical Vapor Deposited

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Gallium Nitride Metal-Insulator-Semiconductor Capacitors Using Low-Pressure Chemical Vapor Deposited Oxides

Materials Science Forum ◽

10.4028/www.scientific.net/msf.389-393.1535 ◽

2002 ◽

Vol 389-393 ◽

pp. 1535-0 ◽

Cited By ~ 1

Author(s):

Kevin Matocha ◽

T. Paul Chow ◽

Ronald J. Gutmann

Keyword(s):

Gallium Nitride ◽

Chemical Vapor ◽

Low Pressure ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Characteristics of an indium antimonide metal-insulator-semiconductor structure prepared by remote plasma enhanced chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.365697 ◽

1997 ◽

Vol 82 (8) ◽

pp. 3917-3921 ◽

Cited By ~ 5

Author(s):

Jae-Gon Lee ◽

Sie-Young Choi ◽

Sang-Jun Park

Keyword(s):

Chemical Vapor Deposition ◽

Indium Antimonide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Semiconductor Structure ◽

Remote Plasma ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Gate quality Si3N4 prepared by low temperature remote plasma enhanced chemical vapor deposition for III–V semiconductor-based metal–insulator–semiconductor devices

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589003 ◽

1996 ◽

Vol 14 (4) ◽

pp. 2674 ◽

Cited By ~ 39

Author(s):

D. G. Park

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Semiconductor Devices ◽

Chemical Vapor ◽

Remote Plasma ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Photoexcitation of emission currents in a metal-insulator-semiconductor system

Soviet Physics Journal ◽

10.1007/bf00892763 ◽

1977 ◽

Vol 20 (6) ◽

pp. 766-769

Author(s):

F. M. Benson ◽

A. A. Miller ◽

A. N. Shaposhnikov ◽

Yu. B. Yankelevich

Keyword(s):

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor System

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Interface properties of HgCdTe metal‐insulator‐semiconductor capacitors

Applied Physics Letters ◽

10.1063/1.100985 ◽

1989 ◽

Vol 54 (3) ◽

pp. 265-267 ◽

Cited By ~ 32

Author(s):

M. J. Yang ◽

C. H. Yang ◽

M. A. Kinch ◽

J. D. Beck

Keyword(s):

Interface Properties ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Accurate evaluation of Ge metal—insulator—semiconductor interface properties

Journal of Applied Physics ◽

10.1063/1.3633517 ◽

2011 ◽

Vol 110 (6) ◽

pp. 064506 ◽

Cited By ~ 11

Author(s):

Noriyuki Taoka ◽

Keiji Ikeda ◽

Wataru Mizubayashi ◽

Yukinori Morita ◽

Shinji Migita ◽

...

Keyword(s):

Interface Properties ◽

Semiconductor Interface ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Accurate Evaluation

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Metalorganic chemical vapor deposition- grown AIN on 6H-SiC for metal-insulator-semiconductor device applications

Journal of Electronic Materials ◽

10.1007/s11664-997-0153-1 ◽

1997 ◽

Vol 26 (3) ◽

pp. 212-216 ◽

Cited By ~ 10

Author(s):

C. C. Tin ◽

Y. Song ◽

T. Isaacs Smith ◽

V. Madangakli ◽

T. S. Sudarshan

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Semiconductor Device ◽

Chemical Vapor ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Device Applications ◽

Metalorganic Chemical

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Interface properties and capacitance‐voltage behavior of indium phosphide metal‐insulator‐semiconductor prepared by plasma‐assisted oxidation

Journal of Applied Physics ◽

10.1063/1.347482 ◽

1991 ◽

Vol 69 (11) ◽

pp. 7918-7920 ◽

Cited By ~ 5

Author(s):

H. Lim ◽

J. A. Baglio ◽

N. DeCola ◽

H. L. Park ◽

J. I. Lee ◽

...

Keyword(s):

Indium Phosphide ◽

Interface Properties ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Capacitance Voltage

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Surface reactions of silane with oxidized InP and their application to the improvement of chemical vapor deposition grown, InP‐based metal‐insulator‐semiconductor devices

Applied Physics Letters ◽

10.1063/1.100426 ◽

1988 ◽

Vol 53 (14) ◽

pp. 1291-1293 ◽

Cited By ~ 14

Author(s):

C. Licoppe ◽

J. M. Moison ◽

Y. I. Nissim ◽

J. L. Regolini ◽

D. Bensahel

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Semiconductor Devices ◽

Surface Reactions ◽

Chemical Vapor ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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