Effect of ramping anneals under inert or oxidizing ambient on the formation of oxygen precipitate denuded zone in nitrogen-doped Czochralski silicon wafers

2006 ◽  
Vol 203 (8) ◽  
pp. 1934-1939
Author(s):  
Xiangyang Ma ◽  
Daxi Tian ◽  
Longfei Gong ◽  
Deren Yang
Keyword(s):  
Silicon Wafers ◽  
Nitrogen Doped ◽  
Czochralski Silicon ◽  
Oxygen Precipitate

“Umbrella”-like precipitates in nitrogen-doped Czochralski silicon wafers

2004 ◽  
Vol 84 (11) ◽  
pp. 1889-1891 ◽  
Author(s):  
A. Kvit ◽  
A. Karoui ◽  
G. Duscher ◽  
G. A. Rozgonyi
Keyword(s):  
Silicon Wafers ◽  
Nitrogen Doped ◽  
Czochralski Silicon

Nitrogen-doped Czochralski silicon treated in rapid thermal process

2006 ◽  
Vol 134 (2-3) ◽  
pp. 193-201 ◽  
Author(s):  
Deren Yang ◽  
Ming Li ◽  
Can Cui ◽  
Xiangyang Ma ◽  
Duanlin Que
Keyword(s):  
Thermal Process ◽  
Rapid Thermal Process ◽  
Nitrogen Doped ◽  
Czochralski Silicon

Nano-scale analysis of precipitates in nitrogen-doped Czochralski silicon

2003 ◽  
Vol 66 (1-4) ◽  
pp. 305-313 ◽  
Author(s):  
G.A. Rozgonyi ◽  
A. Karoui ◽  
A. Kvit ◽  
G. Duscher
Keyword(s):  
Scale Analysis ◽  
Nitrogen Doped ◽  
Czochralski Silicon ◽  
Nano Scale

Copper precipitation in nitrogen-doped Czochralski silicon

2008 ◽  
Vol 104 (1) ◽  
pp. 013508 ◽  
Author(s):  
Weiyan Wang ◽  
Deren Yang ◽  
Xiangyang Ma ◽  
Duanlin Que
Keyword(s):  
Nitrogen Doped ◽  
Czochralski Silicon ◽  
Copper Precipitation
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