Carrier capture cross sections of deep gap states at the interfacial grain boundary in a (110)∕(100) bonded silicon wafer

2007 ◽  
Vol 91 (17) ◽  
pp. 172106 ◽  
Author(s):  
Jinggang Lu ◽  
George Rozgonyi
Keyword(s):  
Grain Boundary ◽  
Silicon Wafer ◽  
Cross Sections ◽  
Capture Cross ◽  
Carrier Capture ◽  
Gap States ◽  
Capture Cross Sections

Photoluminescence Quenching Spectroscopy of Trapmediated Er3+ Excitation Mechanisms in Er-Implanted GaN

1997 ◽  
Vol 482 ◽  
Author(s):  
S. J. Rhee ◽  
S. Kim ◽  
X. Li ◽  
J. J. Coleman ◽  
S. G. Bishop
Keyword(s):  
Cross Sections ◽  
Capture Cross ◽  
Photoluminescence Quenching ◽  
Carrier Capture ◽  
Pl Spectra ◽  
Excitation Mechanisms ◽  
Defects And Impurities ◽  
Pl Spectrum ◽  
Site Selective ◽  
Capture Cross Sections

AbstractTwo-source optical quenching spectroscopy demonstrates that the four site-selective Er3+ photoluminescence (PL) spectra observed in Er-implanted GaN contribute to the above-gap excited Er3+ PL spectrum, with relative efficiencies determined by the carrier capture cross sections and concentrations of the defects or traps which mediate the excitation of each Er site. The above-gap pumped PL spectrum is dominated by two of the trap-mediated Er3+ PL spectra, while the highest concentration Er site, which is efficiently pumped only by direct 4f absorption, contributes only weakly. These experiments indicate that the same defects and impurities are involved in the trapmediated processes responsible for both the above- and the below-gap excitations of the Er3+ PL.

Characterization of Grain Boundaries in Polycrystalline GaAs

1981 ◽  
Vol 5 ◽  
Author(s):  
Michael G. Spencer ◽  
William J. Schaff ◽  
D. Ken Wagner
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Cross Sections ◽  
Capture Cross ◽  
First Time ◽  
Capture Cross Sections

ABSTRACTExamination of capacitance transients arising from the emission or capture of electrons at a charged GaAs grain boundary reveal for the first time the existence of discrete interface levels. The position of these levels in the bandgap and their associated capture cross sections are determined from the transients.

Photoconductance Determination of Carrier Capture Cross Sections of Slow Traps in Silicon Through Variable Pulse Filling

2021 ◽  
Vol 11 (2) ◽  
pp. 273-281
Author(s):  
Manjula Siriwardhana ◽  
Yan Zhu ◽  
Ziv Hameiri ◽  
Daniel Macdonald ◽  
Fiacre Rougieux
Keyword(s):  
Cross Sections ◽  
Capture Cross ◽  
Carrier Capture ◽  
Capture Cross Sections
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