Method for determination of carrier capture cross-sections at Si∕SiO2 interface

2004 ◽  
Vol 40 (2) ◽  
pp. 148 ◽  
Author(s):  
L. Wang ◽  
A. Neugroschel
Keyword(s):  
Cross Sections ◽  
Capture Cross ◽  
Carrier Capture ◽  
Capture Cross Sections

Photoconductance Determination of Carrier Capture Cross Sections of Slow Traps in Silicon Through Variable Pulse Filling

2021 ◽  
Vol 11 (2) ◽  
pp. 273-281
Author(s):  
Manjula Siriwardhana ◽  
Yan Zhu ◽  
Ziv Hameiri ◽  
Daniel Macdonald ◽  
Fiacre Rougieux
Keyword(s):  
Cross Sections ◽  
Capture Cross ◽  
Carrier Capture ◽  
Capture Cross Sections

Determination of capture cross sections for as-grown electron traps in HfO2∕HfSiO stacks

2006 ◽  
Vol 100 (9) ◽  
pp. 093716 ◽  
Author(s):  
C. Z. Zhao ◽  
J. F. Zhang ◽  
M. B. Zahid ◽  
B. Govoreanu ◽  
G. Groeseneken ◽  
...  
Keyword(s):  
Cross Sections ◽  
Capture Cross ◽  
Electron Traps ◽  
Capture Cross Sections

Analytical Determination of Generation-Recombination Rate In Amorphous Silicon

1986 ◽  
Vol 70 ◽  
Author(s):  
Jože Furlan ◽  
Slavko Amon
Keyword(s):  
Analytical Solution ◽  
Amorphous Silicon ◽  
Cross Sections ◽  
Recombination Rate ◽  
Exponential Model ◽  
Localized States ◽  
Analytical Determination ◽  
Capture Cross ◽  
Capture Cross Sections

ABSTRACTA general expression for generation-recombination rate in a-Si based on classical SRH theory including different electron and hole capture cross-sections for donor-like and acceptor-like centers inside the mobility gap is derived. Applying appropriate approximations and two-exponential model for localized states distribution two methods of analytical solution are presented and discussed.

The (??SF) Method - Determination of Radiative Neutron Capture Cross Sections for Unstable Nuclei

2011 ◽  
Vol 59 (2(3)) ◽  
pp. 1713-1716 ◽  
Author(s):  
H. Utsunomiya ◽  
S. Goriely ◽  
H. Akimune ◽  
H. Harada ◽  
F. Kitatani ◽  
...  
Keyword(s):  
Cross Sections ◽  
Neutron Capture ◽  
Capture Cross ◽  
Unstable Nuclei ◽  
Radiative Neutron ◽  
Radiative Neutron Capture ◽  
Capture Cross Sections

Photoluminescence Quenching Spectroscopy of Trapmediated Er3+ Excitation Mechanisms in Er-Implanted GaN

1997 ◽  
Vol 482 ◽  
Author(s):  
S. J. Rhee ◽  
S. Kim ◽  
X. Li ◽  
J. J. Coleman ◽  
S. G. Bishop
Keyword(s):  
Cross Sections ◽  
Capture Cross ◽  
Photoluminescence Quenching ◽  
Carrier Capture ◽  
Pl Spectra ◽  
Excitation Mechanisms ◽  
Defects And Impurities ◽  
Pl Spectrum ◽  
Site Selective ◽  
Capture Cross Sections

AbstractTwo-source optical quenching spectroscopy demonstrates that the four site-selective Er3+ photoluminescence (PL) spectra observed in Er-implanted GaN contribute to the above-gap excited Er3+ PL spectrum, with relative efficiencies determined by the carrier capture cross sections and concentrations of the defects or traps which mediate the excitation of each Er site. The above-gap pumped PL spectrum is dominated by two of the trap-mediated Er3+ PL spectra, while the highest concentration Er site, which is efficiently pumped only by direct 4f absorption, contributes only weakly. These experiments indicate that the same defects and impurities are involved in the trapmediated processes responsible for both the above- and the below-gap excitations of the Er3+ PL.

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