Measurement of minority carrier capture cross sections and application to gold and platinum in silicon

1982 ◽  
Vol 53 (3) ◽  
pp. 1543-1553 ◽  
Author(s):  
S. D. Brotherton ◽  
P. Bradley
Keyword(s):  
Cross Sections ◽  
Minority Carrier ◽  
Capture Cross ◽  
Carrier Capture ◽  
Capture Cross Sections

Photoluminescence Quenching Spectroscopy of Trapmediated Er3+ Excitation Mechanisms in Er-Implanted GaN

1997 ◽  
Vol 482 ◽  
Author(s):  
S. J. Rhee ◽  
S. Kim ◽  
X. Li ◽  
J. J. Coleman ◽  
S. G. Bishop
Keyword(s):  
Cross Sections ◽  
Capture Cross ◽  
Photoluminescence Quenching ◽  
Carrier Capture ◽  
Pl Spectra ◽  
Excitation Mechanisms ◽  
Defects And Impurities ◽  
Pl Spectrum ◽  
Site Selective ◽  
Capture Cross Sections

AbstractTwo-source optical quenching spectroscopy demonstrates that the four site-selective Er3+ photoluminescence (PL) spectra observed in Er-implanted GaN contribute to the above-gap excited Er3+ PL spectrum, with relative efficiencies determined by the carrier capture cross sections and concentrations of the defects or traps which mediate the excitation of each Er site. The above-gap pumped PL spectrum is dominated by two of the trap-mediated Er3+ PL spectra, while the highest concentration Er site, which is efficiently pumped only by direct 4f absorption, contributes only weakly. These experiments indicate that the same defects and impurities are involved in the trapmediated processes responsible for both the above- and the below-gap excitations of the Er3+ PL.

Determination of Traps in Poly(p-phenylene vinylene) Light Emitting Diodes by Chargebased Deep Level Transient Spectroscopy

2002 ◽  
Vol 725 ◽  
Author(s):  
Olivier Gaudin ◽  
Richard B. Jackman ◽  
Thien-Phap Nguyen ◽  
Philippe Le Rendu
Keyword(s):  
Cross Sections ◽  
Minority Carrier ◽  
Deep Level ◽  
Activation Energies ◽  
Phenylene Vinylene ◽  
Capture Cross ◽  
Light Emitting ◽  
Transient Spectroscopy ◽  
Capture Cross Sections

AbstractCharge-based deep level transient spectroscopy (Q-DLTS) has been used to study the defect states that exist within poly(p-phenylene vinylene) (PPV), a semiconducting polymer with a band gap of about 2.4 eV. The technique allows the determination of activation energies, capture cross-sections and trap concentrations. In some circumstances, it is also possible to distinguish between minority and majority carrier traps. The structures investigated here consisted of ITO/PPV/MgAg light emitting diode (LED) devices. Two types of trapping centres were found. The first type has activation energies in the range 0.49 – 0.53 eV and capture cross-sections of the order of 10-16 – 10-18 cm2. It shows a Poole-Frenkel, field assisted-emission process. This level has been identified as a bulk acceptor-like majority carrier (i.e., hole) trap. The second type has activation energies in the range 0.40 – 0.42 eV and capture cross-sections of the order of 10-19 cm2. This level has been identified as a minority carrier (i.e., electron) trap. This second trap type is therefore expected to limit minority carrier injection into the PPV layer within the LED, and hence reduce electroluminescence under forward bias conditions.

Photoconductance Determination of Carrier Capture Cross Sections of Slow Traps in Silicon Through Variable Pulse Filling

2021 ◽  
Vol 11 (2) ◽  
pp. 273-281
Author(s):  
Manjula Siriwardhana ◽  
Yan Zhu ◽  
Ziv Hameiri ◽  
Daniel Macdonald ◽  
Fiacre Rougieux
Keyword(s):  
Cross Sections ◽  
Capture Cross ◽  
Carrier Capture ◽  
Capture Cross Sections

An easy method to determine carrier‐capture cross sections: Application to GaAs

1984 ◽  
Vol 55 (6) ◽  
pp. 1477-1481 ◽  
Author(s):  
D. Stievenard ◽  
J. C. Bourgoin ◽  
M. Lannoo
Keyword(s):  
Cross Sections ◽  
Capture Cross ◽  
Easy Method ◽  
Carrier Capture ◽  
Capture Cross Sections
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