Characterization of Grain Boundaries in Polycrystalline GaAs
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ABSTRACTExamination of capacitance transients arising from the emission or capture of electrons at a charged GaAs grain boundary reveal for the first time the existence of discrete interface levels. The position of these levels in the bandgap and their associated capture cross sections are determined from the transients.
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2009 ◽
Vol 615-617
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pp. 671-674
2021 ◽
Vol 1818
(1)
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pp. 012110
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1978 ◽
Vol 86
(1)
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pp. K45-K47
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1965 ◽
Vol 14
(15)
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pp. 585-587
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2007 ◽
Vol 59
(1)
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pp. 183-192
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