Characterization of Grain Boundaries in Polycrystalline GaAs

1981 ◽  
Vol 5 ◽  
Author(s):  
Michael G. Spencer ◽  
William J. Schaff ◽  
D. Ken Wagner

ABSTRACTExamination of capacitance transients arising from the emission or capture of electrons at a charged GaAs grain boundary reveal for the first time the existence of discrete interface levels. The position of these levels in the bandgap and their associated capture cross sections are determined from the transients.

2016 ◽  
Vol 119 (20) ◽  
pp. 205304 ◽  
Author(s):  
M. Matys ◽  
R. Stoklas ◽  
J. Kuzmik ◽  
B. Adamowicz ◽  
Z. Yatabe ◽  
...  

2009 ◽  
Vol 615-617 ◽  
pp. 671-674
Author(s):  
Christophe Raynaud ◽  
Duy Minh Nguyen ◽  
Pierre Brosselard ◽  
Amador Pérez-Tomás ◽  
Dominique Planson ◽  
...  

Schottky barrier diodes and junction barrier Schottky diodes are investigated by thermal admittance spectroscopy, and by Capacitance-Voltage measurements. Samples are protected with surrounding junction termination extension and p+ ring. Temperature dependence of the doping level is first calculated. Then admittance spectra allow detecting defects and extracting their activation energies and capture cross sections. Results seem to indicate the presence of interfacial defects and defects due to the implantation process.


1953 ◽  
Vol 31 (3) ◽  
pp. 204-206 ◽  
Author(s):  
Rosalie M. Bartholomew ◽  
R. C. Hawkings ◽  
W. F. Merritt ◽  
L. Yaffe

The thermal neutron capture cross sections of Na23 and Mn55 have been determined using the activation method. The values are 0.53 ± 0.03 and 12.7 ± 0.3 barns respectively with respect to σAul97 = 93 barns. These agree well with recent pile oscillator results. The half-life for Mn56 is found to be 2.576 ± 0.002 hr.


1965 ◽  
Vol 14 (15) ◽  
pp. 585-587 ◽  
Author(s):  
B. E. Springett ◽  
D. J. Tanner ◽  
R. J. Donnelly

Sign in / Sign up

Export Citation Format

Share Document