Determination of carrier capture cross sections of traps by deep level transient spectroscopy of semiconductors

1987 ◽  
Vol 62 (7) ◽  
pp. 2865-2870 ◽  
Author(s):  
Jian H. Zhao ◽  
T. E. Schlesinger ◽  
A. G. Milnes
Keyword(s):  
Cross Sections ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Capture Cross ◽  
Carrier Capture ◽  
Transient Spectroscopy ◽  
Capture Cross Sections

Meyer-Neldel Rule in Deep-Level-Transient-Spectroscopy and its Ramifications

2003 ◽  
Vol 763 ◽  
Author(s):  
Richard S. Crandall
Keyword(s):  
Cross Section ◽  
Cross Sections ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Capture Cross ◽  
Emission Data ◽  
The Cross ◽  
Transient Spectroscopy ◽  
Capture Cross Sections

AbstractThis paper presents data showing a Meyer-Neldel rule (MNR) in InGaAsN alloys. It is shown that without this knowledge, significant errors will be made using Deep-Level Transient-Spectroscopy (DLTS) emission data to determine capture cross sections. By correctly accounting for the MNR in analyzing the DLTS data the correct value of the cross section is obtained.

Determination of Traps in Poly(p-phenylene vinylene) Light Emitting Diodes by Chargebased Deep Level Transient Spectroscopy

2002 ◽  
Vol 725 ◽  
Author(s):  
Olivier Gaudin ◽  
Richard B. Jackman ◽  
Thien-Phap Nguyen ◽  
Philippe Le Rendu
Keyword(s):  
Cross Sections ◽  
Minority Carrier ◽  
Deep Level ◽  
Activation Energies ◽  
Phenylene Vinylene ◽  
Capture Cross ◽  
Light Emitting ◽  
Transient Spectroscopy ◽  
Capture Cross Sections

AbstractCharge-based deep level transient spectroscopy (Q-DLTS) has been used to study the defect states that exist within poly(p-phenylene vinylene) (PPV), a semiconducting polymer with a band gap of about 2.4 eV. The technique allows the determination of activation energies, capture cross-sections and trap concentrations. In some circumstances, it is also possible to distinguish between minority and majority carrier traps. The structures investigated here consisted of ITO/PPV/MgAg light emitting diode (LED) devices. Two types of trapping centres were found. The first type has activation energies in the range 0.49 – 0.53 eV and capture cross-sections of the order of 10-16 – 10-18 cm2. It shows a Poole-Frenkel, field assisted-emission process. This level has been identified as a bulk acceptor-like majority carrier (i.e., hole) trap. The second type has activation energies in the range 0.40 – 0.42 eV and capture cross-sections of the order of 10-19 cm2. This level has been identified as a minority carrier (i.e., electron) trap. This second trap type is therefore expected to limit minority carrier injection into the PPV layer within the LED, and hence reduce electroluminescence under forward bias conditions.

Proton Irradiation Damage in Zn and Cd Doped InP

1993 ◽  
Vol 325 ◽  
Author(s):  
George C. Rybicki ◽  
Wendell S. Williams
Keyword(s):  
Cross Sections ◽  
Deep Level Transient Spectroscopy ◽  
Proton Irradiation ◽  
Deep Level ◽  
Irradiation Damage ◽  
Radiation Induced ◽  
Diffusion Rates ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Capture Cross Sections

AbstractDeep Level Transient Spectroscopy (DLTS) was used to study the defects introduced in Zn and Cd doped Schottky barrier diodes by 2 MeV proton irradiation. The defects H3, H4 and H5 were observed in lightly Zn doped InP, while only the defects H3 and H5 were observed in more heavily Zn doped and Cd doped InP. The defect activation energies and capture cross sections did not vary between the Zn and Cd doped InP.The concentration of the radiation induced defects was also measured. The introduction rate of the defect H4 in the lightly Zn doped InP and the introduction rate of the defect H3 in the heavily Zn and Cd doped InP were about equal, but the introduction rate of the defect H5 varied strongly among the three types of material. The introduction rate of H5 was highest in the heavily Zn doped InP but the lowest in the heavily Cd doped InP, even though they were doped comparably. As a result, the total defect introduction rate was lowest in the highly Cd doped InP.The results can be interpreted in terms of the models for the formation and annealing of defects, and by the different diffusion rates of Zn and Cd in InP.

Photoconductance Determination of Carrier Capture Cross Sections of Slow Traps in Silicon Through Variable Pulse Filling

2021 ◽  
Vol 11 (2) ◽  
pp. 273-281
Author(s):  
Manjula Siriwardhana ◽  
Yan Zhu ◽  
Ziv Hameiri ◽  
Daniel Macdonald ◽  
Fiacre Rougieux
Keyword(s):  
Cross Sections ◽  
Capture Cross ◽  
Carrier Capture ◽  
Capture Cross Sections
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