Depth profile investigations of silicon nanocrystals formed in sapphire by ion implantation

2007 ◽  
Vol 102 (2) ◽  
pp. 024309 ◽  
Author(s):  
S. Yerci ◽  
I Yildiz ◽  
M. Kulakci ◽  
U. Serincan ◽  
M. Barozzi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Depth Profile ◽  
Silicon Nanocrystals

Depth profile studies of extended defects induced by ion implantation in Si and Al

1980 ◽  
Vol 49 (1-3) ◽  
pp. 75-79 ◽  
Author(s):  
S. T. Picraux ◽  
D. M. Follstaedt ◽  
P. Baeri ◽  
S. U. Campisano ◽  
G. Foti ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Depth Profile ◽  
Extended Defects

Interaction of Deuterium with Buried Oxides in Silicon

1987 ◽  
Vol 107 ◽  
Author(s):  
S. M. Myers
Keyword(s):  
Ion Implantation ◽  
Nuclear Reaction ◽  
Depth Profile ◽  
Nuclear Reaction Analysis ◽  
Measurable Quantity ◽  
Buried Oxide ◽  
Hydrogen Exposure ◽  
Deuterium Gas ◽  
Defect Densities ◽  
Zone Melt

AbstractSilicon with buried oxides formed by ion implantation (SIMOX) or zone-melt recrystallization (ZMR) was exposed to deuterium gas at temperatures from 773 K to 1273 K, and the depth profile of the D was then determined by nuclear-reaction analysis. The D was localized within the buried oxide, with no measurable quantity in the Si phase. Uptake was controlled by permeation through the Si overlayer, and the permeability of D in Si was determined at 873 K. The sample dependence of D uptake indicated substantially fewer defect-trap sites in SIMOX oxide annealed at 1678 K as opposed to 1548 K, with still smaller defect densities in the ZMR oxide. Hydrogen exposure at 1273 K substantially disrupted the SIMOX structures.

scholarly journals Phosphorus ion implantation in silicon nanocrystals embedded in SiO2

2009 ◽  
Vol 105 (5) ◽  
pp. 054307 ◽  
Author(s):  
Kouichi Murakami ◽  
Ryota Shirakawa ◽  
Masatoshi Tsujimura ◽  
Noriyuki Uchida ◽  
Naoki Fukata ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Silicon Nanocrystals

scholarly journals Raman Scattering and Backscattering Studies of Silicon Nanocrystals Formed Using Sequential Ion Implantation

Silicon ◽  
2013 ◽  
Vol 6 (1) ◽  
pp. 65-71 ◽  
Author(s):  
Gayatri Sahu ◽  
Rajesh Kumar ◽  
Durga Prasad Mahapatra
Keyword(s):  
Ion Implantation ◽  
Raman Scattering ◽  
Silicon Nanocrystals

scholarly journals Formation of silicon nanocrystals in sapphire by ion implantation and the origin of visible photoluminescence

2006 ◽  
Vol 100 (7) ◽  
pp. 074301 ◽  
Author(s):  
S. Yerci ◽  
U. Serincan ◽  
I. Dogan ◽  
S. Tokay ◽  
M. Genisel ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Silicon Nanocrystals ◽  
Visible Photoluminescence

scholarly journals 1011 Depth profile for DLC films deposited by plasma ion implantation with CH_4

2007 ◽  
Vol 2007 (0) ◽  
pp. 253-254
Author(s):  
Atsushi MITSUO ◽  
Masahiro KAWAGUCHI ◽  
Kazuo MORIKAWA ◽  
Saiko AOKI ◽  
Hideto SUZUKI
Keyword(s):  
Ion Implantation ◽  
Depth Profile

Applied-Information Technology in Concentration Depth Profile of Multi-Charged Mo Ion Implantation

2014 ◽  
Vol 662 ◽  
pp. 115-118
Author(s):  
Jian Hua Yang ◽  
Xing Jian Ma
Keyword(s):  
Monte Carlo ◽  
Ion Implantation ◽  
Depth Profile ◽  
High Dose ◽  
H13 Steel ◽  
Depth Profiles ◽  
Concentration Depth Profile ◽  
Charged Ions ◽  
Concentration Depth Profiles ◽  
Better Than

Monte Carlo computer simulations based on the binary collision approximation, TRIDYN program, have been applied to calculate the concentration depth profiles of implanted multi-charged molybdenum ions in H13 steel. The sputtering effect of a high dose ion implantation and influence of multi-charged ions on the concentration depth profile of implanted molybdenum ions can both be considered in the TRIDYN simulation. For the Monte Carlo computer simulation, the chosen pseudo-projectiles are 500000. The chosen extraction voltages are 48kV and 25kV, respectively, and an implantation doses of 5×1017cm-2 to compare the results which have been published related to molybdenum ion implantation. TRIDYN program is better than SRIM program in the calculation of the concentration depth profiles of implanted multi-charged ions. And the calculation result of the TRIDYN program is different from the experiment result. The other factors of affecting the concentration depth profile have also been discussed finally.

Empirical depth profile simulator for ion implantation in 6Hα‐SiC

1995 ◽  
Vol 77 (12) ◽  
pp. 6194-6200 ◽  
Author(s):  
S. Ahmed ◽  
C. J. Barbero ◽  
T. W. Sigmon ◽  
J. W. Erickson
Keyword(s):  
Ion Implantation ◽  
Depth Profile
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