Interaction of Deuterium with Buried Oxides in Silicon

MRS Proceedings ◽

10.1557/proc-107-105 ◽

1987 ◽

Vol 107 ◽

Cited By ~ 12

Author(s):

S. M. Myers

Keyword(s):

Ion Implantation ◽

Nuclear Reaction ◽

Depth Profile ◽

Nuclear Reaction Analysis ◽

Measurable Quantity ◽

Buried Oxide ◽

Hydrogen Exposure ◽

Deuterium Gas ◽

Defect Densities ◽

Zone Melt

AbstractSilicon with buried oxides formed by ion implantation (SIMOX) or zone-melt recrystallization (ZMR) was exposed to deuterium gas at temperatures from 773 K to 1273 K, and the depth profile of the D was then determined by nuclear-reaction analysis. The D was localized within the buried oxide, with no measurable quantity in the Si phase. Uptake was controlled by permeation through the Si overlayer, and the permeability of D in Si was determined at 873 K. The sample dependence of D uptake indicated substantially fewer defect-trap sites in SIMOX oxide annealed at 1678 K as opposed to 1548 K, with still smaller defect densities in the ZMR oxide. Hydrogen exposure at 1273 K substantially disrupted the SIMOX structures.

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Light Impurity Depth Profiling in the Nuclear Reaction AnalysiS

MRS Proceedings ◽

10.1557/proc-316-1065 ◽

1993 ◽

Vol 316 ◽

Author(s):

Oleg I. Zabashta ◽

A.I. Kul'ment'ev ◽

V.E. Storizko

Keyword(s):

Nuclear Reaction ◽

Depth Profile ◽

General Problem ◽

Depth Profiling ◽

Measured Data ◽

Point Of View ◽

Nuclear Reaction Analysis ◽

Incorrect Problem ◽

Non Destructive ◽

Non Destructive Techniques

The general problem in the analysis of a sample by non-destructive techniques such as nuclear microanalysis, ellipsometry, etc. is the interpretation of the measured data. The impurity depth profile obtained may noticeable non-physical fluctuations. From the mathematical point of view this could be explain by the fact that while interpreting the results we have to solve an incorrect problem to which routine computational methods are not applicable.

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Hydrogen depth profile in sputtered CuxZr1-x amorphous alloys studied by nuclear reaction analysis. Evolution as a function of annealing temperature.

Solid State Communications ◽

10.1016/0038-1098(86)90670-8 ◽

1986 ◽

Vol 57 (1) ◽

pp. 59-61 ◽

Cited By ~ 6

Author(s):

M. Fallavier ◽

J.P. Thomas ◽

J.M. Frigerio ◽

J. Rivory

Keyword(s):

Nuclear Reaction ◽

Depth Profile ◽

Amorphous Alloys ◽

Annealing Temperature ◽

Nuclear Reaction Analysis

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Deuterium Interactions with Ion-Implanted Oxygen in Cu and Au

MRS Proceedings ◽

10.1557/proc-128-309 ◽

1988 ◽

Vol 128 ◽

Author(s):

S. M. Myers ◽

W. A. Swansiger ◽

D. M. Follstaedt

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Ion Implantation ◽

Nuclear Reaction ◽

Room Temperature ◽

Phase Changes ◽

Nuclear Reaction Analysis ◽

Temperature Range ◽

Transmission Electron ◽

First Time

ABSTRACTThe interactions of deuterium (D) with oxygen in Cu and Au were examined using ion implantation, nuclear-reaction analysis, and transmission electron microscopy. In Cu, the reduction of Cu2O precipitates by D to produce D20 was shown to occur readily down to room temperature, at a rate limited by the transport of D to the oxides. The reverse process of D2O dissociation was characterized for the first time below the temperature range of steam blistering. The evolution of the Cu(D)-Cu2O-D2O system was shown to be predicted by a newly extended transport formalism encompassing phase changes, trapping, diffusion, and surface release. In Au, buried 0 sinks were used to measure the permeability of D at 573 and 373 K, thereby extending the range of measured permeabilities downward by about six orders or magnitude.

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