scholarly journals Phosphorus ion implantation in silicon nanocrystals embedded in SiO2

2009 ◽  
Vol 105 (5) ◽  
pp. 054307 ◽  
Author(s):  
Kouichi Murakami ◽  
Ryota Shirakawa ◽  
Masatoshi Tsujimura ◽  
Noriyuki Uchida ◽  
Naoki Fukata ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Silicon Nanocrystals

scholarly journals Raman Scattering and Backscattering Studies of Silicon Nanocrystals Formed Using Sequential Ion Implantation

Silicon ◽  
2013 ◽  
Vol 6 (1) ◽  
pp. 65-71 ◽  
Author(s):  
Gayatri Sahu ◽  
Rajesh Kumar ◽  
Durga Prasad Mahapatra
Keyword(s):  
Ion Implantation ◽  
Raman Scattering ◽  
Silicon Nanocrystals

scholarly journals Formation of silicon nanocrystals in sapphire by ion implantation and the origin of visible photoluminescence

2006 ◽  
Vol 100 (7) ◽  
pp. 074301 ◽  
Author(s):  
S. Yerci ◽  
U. Serincan ◽  
I. Dogan ◽  
S. Tokay ◽  
M. Genisel ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Silicon Nanocrystals ◽  
Visible Photoluminescence

Depth profile investigations of silicon nanocrystals formed in sapphire by ion implantation

2007 ◽  
Vol 102 (2) ◽  
pp. 024309 ◽  
Author(s):  
S. Yerci ◽  
I Yildiz ◽  
M. Kulakci ◽  
U. Serincan ◽  
M. Barozzi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Depth Profile ◽  
Silicon Nanocrystals

From continuous to quantized charging response of silicon nanocrystals obtained by ultra-low energy ion implantation

2005 ◽  
Vol 49 (7) ◽  
pp. 1198-1205 ◽  
Author(s):  
M. Shalchian ◽  
J. Grisolia ◽  
G. Ben Assayag ◽  
H. Coffin ◽  
S.M. Atarodi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Silicon Nanocrystals ◽  
Low Energy

Modification of photoluminescence and charge in oxide with silicon nanocrystals by high energy ion implantation

2006 ◽  
Author(s):  
Irina Antonova ◽  
Mitrofan Gulyaev ◽  
Vladimir Skuratov ◽  
Denis Marin ◽  
Elvira Zaikina ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Silicon Nanocrystals ◽  
High Energy

scholarly journals Enhancing Hydrogen Diffusion in Silica Matrix by Using Metal Ion Implantation to Improve the Emission Properties of Silicon Nanocrystals

2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
J. Bornacelli ◽  
J. A. Reyes-Esqueda ◽  
L. Rodríguez-Fernández ◽  
J. L. Ruvalcaba-Sil ◽  
F. J. Jaimes ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Metal Ion ◽  
Silicon Nanocrystals ◽  
Hydrogen Diffusion ◽  
Light Emission ◽  
Silica Matrix ◽  
Great Effort ◽  
Elastic Recoil ◽  
Emission Properties

Efficient silicon-based light emitters continue to be a challenge. A great effort has been made in photonics to modify silicon in order to enhance its light emission properties. In this aspect silicon nanocrystals (Si-NCs) have become the main building block of silicon photonic (modulators, waveguide, source, and detectors). In this work, we present an approach based on implantation of Ag (or Au) ions and a proper thermal annealing in order to improve the photoluminescence (PL) emission of Si-NCs embedded in SiO2. The Si-NCs are obtained by ion implantation at MeV energy and nucleated at high depth into the silica matrix (1-2 μm under surface). Once Si-NCs are formed inside the SiO2we implant metal ions at energies that do not damage the Si-NCs. We have observed by, PL and time-resolved PL, that ion metal implantation and a subsequent thermal annealing in a hydrogen-containing atmosphere could significantly increase the emission properties of Si-NCs. Elastic Recoil Detection measurements show that the samples with an enhanced luminescence emission present a higher hydrogen concentration. This suggests that ion metal implantation enhances the hydrogen diffusion into silica matrix allowing a better passivation of surface defects on Si NCs.

Effects of an Applied Electric Field on Silicon Nanocrystals Photoluminescence

2008 ◽  
Vol 1145 ◽  
Author(s):  
Alexandre Lacombe ◽  
David Barba ◽  
Félix Beaudoin ◽  
François Martin ◽  
Guy G. Ross
Keyword(s):  
Electric Field ◽  
Ion Implantation ◽  
Current Density ◽  
Gate Voltage ◽  
Applied Electric Field ◽  
Silicon Nanocrystals ◽  
Stark Effect ◽  
Charge Carriers ◽  
Wavelength Shift ◽  
Quantum Confined Stark Effect

AbstractThe photoluminescence (PL) of silicon nanocrystals (Si-nc) obtained by ion implantation in the oxide layer of a MOS structure was measured during the application of a slowly varying electric field generated by biasing the gate electrode. As a result, both PL intensity enhancement and quenching have been observed. These reproducible intensity modulations exhibit a hysteresis effect when the applied electric field is varied and persist even after it is removed. The behavior of the current density and the absence of wavelength shift in the PL spectra during gate voltage sweeps suggest that these modulations are related to the motion of charge carriers rather than to field-induced mechanisms such as quantum-confined Stark effect (QCSE).

Electroluminescence microspectroscopy of silicon nanocrystals obtained by Si+ion implantation in SiO2

2008 ◽  
Vol 19 (46) ◽  
pp. 465702 ◽  
Author(s):  
A Lacombe ◽  
B Kadari ◽  
F Beaudoin ◽  
D Barba ◽  
F Martin ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Silicon Nanocrystals ◽  
Si Ion Implantation

MOS Memory Using Silicon Nanocrystals Formed by Very-Low Energy Ion Implantation

2000 ◽  
Author(s):  
E. Kapetanakis ◽  
P. Normand ◽  
D. Tsoukalas ◽  
G. Kamoulakos ◽  
D. Kouvatsos ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Silicon Nanocrystals ◽  
Low Energy
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