Empirical depth profile simulator for ion implantation in 6Hα‐SiC

1995 ◽  
Vol 77 (12) ◽  
pp. 6194-6200 ◽  
Author(s):  
S. Ahmed ◽  
C. J. Barbero ◽  
T. W. Sigmon ◽  
J. W. Erickson
Keyword(s):  
Ion Implantation ◽  
Depth Profile

Depth profile studies of extended defects induced by ion implantation in Si and Al

1980 ◽  
Vol 49 (1-3) ◽  
pp. 75-79 ◽  
Author(s):  
S. T. Picraux ◽  
D. M. Follstaedt ◽  
P. Baeri ◽  
S. U. Campisano ◽  
G. Foti ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Depth Profile ◽  
Extended Defects

Interaction of Deuterium with Buried Oxides in Silicon

1987 ◽  
Vol 107 ◽  
Author(s):  
S. M. Myers
Keyword(s):  
Ion Implantation ◽  
Nuclear Reaction ◽  
Depth Profile ◽  
Nuclear Reaction Analysis ◽  
Measurable Quantity ◽  
Buried Oxide ◽  
Hydrogen Exposure ◽  
Deuterium Gas ◽  
Defect Densities ◽  
Zone Melt

AbstractSilicon with buried oxides formed by ion implantation (SIMOX) or zone-melt recrystallization (ZMR) was exposed to deuterium gas at temperatures from 773 K to 1273 K, and the depth profile of the D was then determined by nuclear-reaction analysis. The D was localized within the buried oxide, with no measurable quantity in the Si phase. Uptake was controlled by permeation through the Si overlayer, and the permeability of D in Si was determined at 873 K. The sample dependence of D uptake indicated substantially fewer defect-trap sites in SIMOX oxide annealed at 1678 K as opposed to 1548 K, with still smaller defect densities in the ZMR oxide. Hydrogen exposure at 1273 K substantially disrupted the SIMOX structures.

Depth profile investigations of silicon nanocrystals formed in sapphire by ion implantation

2007 ◽  
Vol 102 (2) ◽  
pp. 024309 ◽  
Author(s):  
S. Yerci ◽  
I Yildiz ◽  
M. Kulakci ◽  
U. Serincan ◽  
M. Barozzi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Depth Profile ◽  
Silicon Nanocrystals

scholarly journals 1011 Depth profile for DLC films deposited by plasma ion implantation with CH_4

2007 ◽  
Vol 2007 (0) ◽  
pp. 253-254
Author(s):  
Atsushi MITSUO ◽  
Masahiro KAWAGUCHI ◽  
Kazuo MORIKAWA ◽  
Saiko AOKI ◽  
Hideto SUZUKI
Keyword(s):  
Ion Implantation ◽  
Depth Profile

Applied-Information Technology in Concentration Depth Profile of Multi-Charged Mo Ion Implantation

2014 ◽  
Vol 662 ◽  
pp. 115-118
Author(s):  
Jian Hua Yang ◽  
Xing Jian Ma
Keyword(s):  
Monte Carlo ◽  
Ion Implantation ◽  
Depth Profile ◽  
High Dose ◽  
H13 Steel ◽  
Depth Profiles ◽  
Concentration Depth Profile ◽  
Charged Ions ◽  
Concentration Depth Profiles ◽  
Better Than

Monte Carlo computer simulations based on the binary collision approximation, TRIDYN program, have been applied to calculate the concentration depth profiles of implanted multi-charged molybdenum ions in H13 steel. The sputtering effect of a high dose ion implantation and influence of multi-charged ions on the concentration depth profile of implanted molybdenum ions can both be considered in the TRIDYN simulation. For the Monte Carlo computer simulation, the chosen pseudo-projectiles are 500000. The chosen extraction voltages are 48kV and 25kV, respectively, and an implantation doses of 5×1017cm-2 to compare the results which have been published related to molybdenum ion implantation. TRIDYN program is better than SRIM program in the calculation of the concentration depth profiles of implanted multi-charged ions. And the calculation result of the TRIDYN program is different from the experiment result. The other factors of affecting the concentration depth profile have also been discussed finally.

Raman Spectroscopy for Nondestructive Depth Profile Studies of Ion Implantation in Silicon

1986 ◽  
Vol 133 (5) ◽  
pp. 988-993 ◽  
Author(s):  
A. C. deWilton ◽  
M. Simard‐Normandin ◽  
P. T. T. Wong
Keyword(s):  
Raman Spectroscopy ◽  
Ion Implantation ◽  
Depth Profile

scholarly journals Depth profile of the nonlinear susceptibility of LiNbO_3 ridge waveguides fabricated by ion implantation and dicing

2017 ◽  
Vol 7 (11) ◽  
pp. 3836 ◽  
Author(s):  
Lin Ai ◽  
Lei Wang ◽  
Xintong Zhang ◽  
Chen Chen ◽  
Feng Chen
Keyword(s):  
Ion Implantation ◽  
Depth Profile ◽  
Nonlinear Susceptibility ◽  
Ridge Waveguides

Composition and Structure of SiCx:H Films Formed by Plasma Immersion ION Implantation From A Methane Plasma

2000 ◽  
Vol 609 ◽  
Author(s):  
K. Volz ◽  
Ch. Klatt ◽  
W. Ensinger
Keyword(s):  
Silicon Carbide ◽  
Ir Spectroscopy ◽  
Ion Implantation ◽  
Depth Profile ◽  
High Voltage ◽  
Chemical Binding ◽  
Composition And Structure ◽  
Plasma Immersion Ion Implantation

ABSTRACTHydrocarbon ions are implanted into silicon by pulse biasing Si to a high voltage of -45 kV in a methane plasma. The resulting SiCx:H films are examined with respect to their composition and chemical binding by RBS, NRA and IR spectroscopy. The process may yield all C/Si ratios, up to pure C films. The H depth profile is shown to be strongly governed by the C depth profile. Silicon carbide bonding as well as C–H bonds can be proven in the implanted region.

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