scholarly journals Formation of silicon nanocrystals in sapphire by ion implantation and the origin of visible photoluminescence

2006 ◽  
Vol 100 (7) ◽  
pp. 074301 ◽  
Author(s):  
S. Yerci ◽  
U. Serincan ◽  
I. Dogan ◽  
S. Tokay ◽  
M. Genisel ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Silicon Nanocrystals ◽  
Visible Photoluminescence

Visible photoluminescence from silicon nanocrystals formed in silicon dioxide by ion implantation and thermal processing

1996 ◽  
Vol 276 (1-2) ◽  
pp. 104-107 ◽  
Author(s):  
Tsutomu Shimizu-Iwayama ◽  
Yoichi Terao ◽  
Atsushi Kamiya ◽  
Motonori Takeda ◽  
Setsuo Nakao ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Silicon Dioxide ◽  
Thermal Processing ◽  
Silicon Nanocrystals ◽  
Visible Photoluminescence

scholarly journals Phosphorus ion implantation in silicon nanocrystals embedded in SiO2

2009 ◽  
Vol 105 (5) ◽  
pp. 054307 ◽  
Author(s):  
Kouichi Murakami ◽  
Ryota Shirakawa ◽  
Masatoshi Tsujimura ◽  
Noriyuki Uchida ◽  
Naoki Fukata ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Silicon Nanocrystals

scholarly journals Raman Scattering and Backscattering Studies of Silicon Nanocrystals Formed Using Sequential Ion Implantation

Silicon ◽  
2013 ◽  
Vol 6 (1) ◽  
pp. 65-71 ◽  
Author(s):  
Gayatri Sahu ◽  
Rajesh Kumar ◽  
Durga Prasad Mahapatra
Keyword(s):  
Ion Implantation ◽  
Raman Scattering ◽  
Silicon Nanocrystals

Depth profile investigations of silicon nanocrystals formed in sapphire by ion implantation

2007 ◽  
Vol 102 (2) ◽  
pp. 024309 ◽  
Author(s):  
S. Yerci ◽  
I Yildiz ◽  
M. Kulakci ◽  
U. Serincan ◽  
M. Barozzi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Depth Profile ◽  
Silicon Nanocrystals

From continuous to quantized charging response of silicon nanocrystals obtained by ultra-low energy ion implantation

2005 ◽  
Vol 49 (7) ◽  
pp. 1198-1205 ◽  
Author(s):  
M. Shalchian ◽  
J. Grisolia ◽  
G. Ben Assayag ◽  
H. Coffin ◽  
S.M. Atarodi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Silicon Nanocrystals ◽  
Low Energy

Modification of photoluminescence and charge in oxide with silicon nanocrystals by high energy ion implantation

2006 ◽  
Author(s):  
Irina Antonova ◽  
Mitrofan Gulyaev ◽  
Vladimir Skuratov ◽  
Denis Marin ◽  
Elvira Zaikina ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Silicon Nanocrystals ◽  
High Energy

scholarly journals Enhancing Hydrogen Diffusion in Silica Matrix by Using Metal Ion Implantation to Improve the Emission Properties of Silicon Nanocrystals

2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
J. Bornacelli ◽  
J. A. Reyes-Esqueda ◽  
L. Rodríguez-Fernández ◽  
J. L. Ruvalcaba-Sil ◽  
F. J. Jaimes ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Metal Ion ◽  
Silicon Nanocrystals ◽  
Hydrogen Diffusion ◽  
Light Emission ◽  
Silica Matrix ◽  
Great Effort ◽  
Elastic Recoil ◽  
Emission Properties

Efficient silicon-based light emitters continue to be a challenge. A great effort has been made in photonics to modify silicon in order to enhance its light emission properties. In this aspect silicon nanocrystals (Si-NCs) have become the main building block of silicon photonic (modulators, waveguide, source, and detectors). In this work, we present an approach based on implantation of Ag (or Au) ions and a proper thermal annealing in order to improve the photoluminescence (PL) emission of Si-NCs embedded in SiO2. The Si-NCs are obtained by ion implantation at MeV energy and nucleated at high depth into the silica matrix (1-2 μm under surface). Once Si-NCs are formed inside the SiO2we implant metal ions at energies that do not damage the Si-NCs. We have observed by, PL and time-resolved PL, that ion metal implantation and a subsequent thermal annealing in a hydrogen-containing atmosphere could significantly increase the emission properties of Si-NCs. Elastic Recoil Detection measurements show that the samples with an enhanced luminescence emission present a higher hydrogen concentration. This suggests that ion metal implantation enhances the hydrogen diffusion into silica matrix allowing a better passivation of surface defects on Si NCs.

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