Memory characteristics of Co nanocrystal memory device with HfO2 as blocking oxide

2007 ◽  
Vol 90 (13) ◽  
pp. 132102 ◽  
Author(s):  
F. M. Yang ◽  
T. C. Chang ◽  
P. T. Liu ◽  
P. H. Yeh ◽  
Y. C. Yu ◽  
...  
Keyword(s):  
Memory Device ◽  
Nanocrystal Memory ◽  
Memory Characteristics

Synthesis and Resistive Switching Characteristics of Ethyl Methacrylate /N, N'-4, 4'-Diphenylmethane-Bismaleimide Copolymer

2013 ◽  
Vol 788 ◽  
pp. 159-163 ◽  
Author(s):  
Yu Ru He ◽  
Pei Bang Dai ◽  
Ji Wen Xu ◽  
Yue Qun Lu ◽  
Hua Wang
Keyword(s):  
Sandwich Structure ◽  
Memory Device ◽  
Current Ratio ◽  
Ethyl Methacrylate ◽  
Ag Electrode ◽  
Ito Electrode ◽  
Film Forming ◽  
Switching Characteristics ◽  
Memory Characteristics ◽  
Switching Threshold Voltage

The Ethyl Methacrylate (EMA)/N, N-4, 4-Diphenylmethane-bismaleimide (BMI) copolymer was synthesized by the conventional free radical polymerization. The resulting copolymer was fully characterized by FTIR, TG, DSC and the film exhibited excellent film-forming property, high thermal and dimensional stability. The devices based on EMA/ BMI copolymer possess a sandwich structure comprising bottom indiumtin oxide (ITO) electrode and top Ag electrode. The as-fabricated device exhibits the nonvolatile rewritable flash type memory characteristics. The ITO/(EMA/BMI copolymer)/Ag memory device also demonstrates ON/OFF-current ratio of about 1 × 102 and lower switching threshold voltage of about 0.98V.

Selective Incorporation of Colloidal Nanocrystals in Nanopatterned SiO[sub 2] Layer for Nanocrystal Memory Device

2010 ◽  
Vol 13 (3) ◽  
pp. K19 ◽  
Author(s):  
Il Seo ◽  
Do-Joong Lee ◽  
Quanli Hu ◽  
Chang-Woo Kwon ◽  
Kipil Lim ◽  
...  
Keyword(s):  
Memory Device ◽  
Colloidal Nanocrystals ◽  
Selective Incorporation ◽  
Nanocrystal Memory

Negative Differential Resistance Characteristics of Silicon Nanocrystal Memory

2000 ◽  
Vol 609 ◽  
Author(s):  
Seung Jae Baik ◽  
Koeng Su Lim
Keyword(s):  
Quantum Dot ◽  
Negative Differential Resistance ◽  
Chemical Vapor ◽  
Differential Resistance ◽  
Memory Device ◽  
Oxide Semiconductor ◽  
Si Quantum Dot ◽  
Charge Tunneling ◽  
Nanocrystal Memory ◽  
Average Size

ABSTRACTTwo-dimensional (2D) Si quantum dot array was fabricated by oxidation of microcrystalline Si film deposited by photo chemical vapor deposition (photo-CVD). Average size of Si quantum dot was estimated to be 2.4nm and dot density 7 ∼ 8 ×1011 cm−2. Nanocrystal memory device with this 2D quantum dot array demonstrated negative differential resistance characteristics and single charge tunneling phenomena, which was observed as stepwise decrease of gate transconductance. Interface states at the oxidized surface of quantum dots were assumed to explain temperature dependence characteristics. This new process is adequate for functional device application of nanocrystal metal-oxide-semiconductor (MOS) memory.

Theoretical and experimental investigation of Si nanocrystal memory device with HfO/sub 2/ high-k tunneling dielectric

2003 ◽  
Vol 50 (10) ◽  
pp. 2067-2072 ◽  
Author(s):  
Jong Jin Lee ◽  
Xuguang Wang ◽  
Weiping Bai ◽  
Nan Lu ◽  
Dim-Lee Kwong
Keyword(s):  
Experimental Investigation ◽  
Memory Device ◽  
High K ◽  
Si Nanocrystal ◽  
Nanocrystal Memory

Role of Oxide/Nitride Interface Traps on the Nanocrystal Memory Characteristics

2007 ◽  
Author(s):  
Alberto Gasperin ◽  
Andrea Cester ◽  
Nicola Wrachien ◽  
Alessandro Paccagnella ◽  
Cosimo Gerardi ◽  
...  
Keyword(s):  
Interface Traps ◽  
Nanocrystal Memory ◽  
Memory Characteristics

A novel quad source/drain metal nanocrystal memory device for multibit-per-cell storage

2003 ◽  
Vol 24 (5) ◽  
pp. 345-347 ◽  
Author(s):  
Zengtao Liu ◽  
Chungho Lee ◽  
V. Narayanan ◽  
G. Pei ◽  
E.C. Kan
Keyword(s):  
Memory Device ◽  
Nanocrystal Memory ◽  
Cell Storage

Nanocrystal Memory Device Utilizing GaN Quantum Dots by RF MBE

2010 ◽  
Vol 1250 ◽  
Author(s):  
Panagiotis Dimitrakis ◽  
Eleftherios Iliopoulos ◽  
Pascal Normand
Keyword(s):  
Electrical Characterization ◽  
Energy Band Diagram ◽  
Memory Device ◽  
Hole Injection ◽  
Mos Devices ◽  
Molecular Beam Deposition ◽  
Frequency Plasma ◽  
Nanocrystal Memory ◽  
Beam Deposition

AbstractThe growth of GaN-QDs by radio frequency plasma assisted molecular beam deposition (RF-MBD) on thin SiO2 films for non-volatile memories (NVM) applications is demonstrated. Thermal budget modification during the deposition allows tuning of the size and density of the QDs. Preliminary electrical characterization of GaN-QD MOS devices reveals efficient electron injection at very low voltages from the Si accumulation layer to the QDs. The observed limitation in hole injection relates adequately to the energy band diagram of the structure.

Ultra-Low energy Ion Implantation of Si into HfO2-based layers for Non Volatile Memory Applications

2009 ◽  
Vol 1160 ◽  
Author(s):  
Pierre-Eugène Coulon ◽  
Kristel Chan Shin Yu ◽  
Sylvie Schamm ◽  
Gerard Ben Assayag ◽  
Béatrice Pécassou ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Memory Device ◽  
Low Energy ◽  
Operating Voltage ◽  
Projected Range ◽  
Non Volatile Memory ◽  
Memory Applications ◽  
Anomalous Oxidation ◽  
Memory Characteristics ◽  
2D Array

AbstractThe fabrication of NCs is carried out using an innovative method, ultra-low energy (≤5 keV) ion implantation (ULE-II) into thin (6-9 nm) HfO2–based layers in order to form after subsequent annealing a controlled 2D array of Si NCs. The implantation of Si into HfO2 leads to the formation of SiO2–rich regions at the projected range due to the oxidation of the implanted Si atoms. This anomalous oxidation that takes place at room temperature is mainly due to humidity penetration in damaged layers. Different solutions are investigated here in order to avoid this oxidation process and stabilize the Si-phase. Finally, unexpected structures as HfO2 NCs embedded with SiO2 matrix are obtained and show interesting memory characteristics. Interestingly, a large memory window of 1.18 V has been achieved at relatively low sweeping voltage of ± 6 V for these samples, indicating their utility for low operating voltage memory device.

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