Thermal Stability and Memory Characteristics of HfON Trapping Layer for Flash Memory Device Applications

2009 ◽  
Vol 12 (11) ◽  
pp. H412 ◽  
Author(s):  
Sanghun Jeon
Keyword(s):  
Thermal Stability ◽  
Flash Memory ◽  
Memory Device ◽  
Device Applications ◽  
Memory Characteristics

High-κ HfO2/Al2O3 nanolaminated charge trapping layers for high performance flash memory device applications

2006 ◽  
Author(s):  
S. Maikap ◽  
P. J. Tzeng ◽  
T.-Y. Wang ◽  
C. H. Lin ◽  
H. Y. Lee ◽  
...  
Keyword(s):  
Flash Memory ◽  
High Performance ◽  
Charge Trapping ◽  
Memory Device ◽  
Device Applications

Low Voltage Operation of High-κ HfO2/TiO2/Al2O3Single Quantum Well for Nanoscale Flash Memory Device Applications

2008 ◽  
Vol 47 (3) ◽  
pp. 1818-1821 ◽  
Author(s):  
Siddheswar Maikap ◽  
Ting-Yu Wang ◽  
Pei-Jer Tzeng ◽  
Heng-Yuan Lee ◽  
Cha-Hsin Lin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Flash Memory ◽  
Low Voltage ◽  
Memory Device ◽  
Low Voltage Operation ◽  
Device Applications

Raman Characterization of Poly-Si Channel Materials for 3D Flash Memory Device Applications

2014 ◽  
Vol 61 (3) ◽  
pp. 55-61 ◽  
Author(s):  
W. S. Yoo ◽  
T. Ishigaki ◽  
T. Ueda ◽  
K. Kang ◽  
D. S. Sheen ◽  
...  
Keyword(s):  
Flash Memory ◽  
Memory Device ◽  
Device Applications ◽  
Raman Characterization

Carrier Profiling of the 10-nm-order Structure in a 3D Flash Memory Cell Using Scanning Nonlinear Dielectric Microscopy

2019 ◽  
Author(s):  
Jun Hirota ◽  
Ken Hoshino ◽  
Tsukasa Nakai ◽  
Kohei Yamasue ◽  
Yasuo Cho
Keyword(s):  
Spatial Resolution ◽  
Flash Memory ◽  
Analytical Techniques ◽  
Memory Cell ◽  
Memory Device ◽  
Floating Gate ◽  
Order Structure ◽  
Carrier Distribution ◽  
Nonlinear Dielectric ◽  
Flash Memory Cell

Abstract In this paper, the authors report their successful attempt to acquire the scanning nonlinear dielectric microscopy (SNDM) signals around the floating gate and channel structures of the 3D Flash memory device, utilizing the custom-built SNDM tool with a super-sharp diamond tip. The report includes details of the SNDM measurement and process involved in sample preparation. With the super-sharp diamond tips with radius of less than 5 nm to achieve the supreme spatial resolution, the authors successfully obtained the SNDM signals of floating gate in high contrast to the background in the selected areas. They deduced the minimum spatial resolution and seized a clear evidence that the diffusion length differences of the n-type impurity among the channels are less than 21 nm. Thus, they concluded that SNDM is one of the most powerful analytical techniques to evaluate the carrier distribution in the superfine three dimensionally structured memory devices.

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