Role of Oxide/Nitride Interface Traps on the Nanocrystal Memory Characteristics

2007 ◽  
Author(s):  
Alberto Gasperin ◽  
Andrea Cester ◽  
Nicola Wrachien ◽  
Alessandro Paccagnella ◽  
Cosimo Gerardi ◽  
...  
Keyword(s):  
Interface Traps ◽  
Nanocrystal Memory ◽  
Memory Characteristics

The role of interface traps in rebound mechanisms

1994 ◽  
Vol 143 (2) ◽  
pp. 333-339 ◽  
Author(s):  
S. Golubović ◽  
G. Ristić ◽  
M. Pejović ◽  
S. Dimitrijev
Keyword(s):  
Interface Traps

The Study Of Memory Characteristics Of Adolescents And Methods Of Its Development

2021 ◽  
Vol 03 (08) ◽  
pp. 15-17
Author(s):  
Oymatova Dilorom Ruzimurotovna ◽  
Keyword(s):  
Human Life ◽  
Memory Development ◽  
Relationship Of ◽  
Developmental Features ◽  
The Relationship ◽  
With Memory ◽  
Memory Characteristics

The article discusses the peculiarities of memory and its developmental features, the role of memory in human life, the variability of memory in adolescents, ways to strengthen memory, the relationship of thinking and perception with memory, reading and memory development.

Memory characteristics of Co nanocrystal memory device with HfO2 as blocking oxide

2007 ◽  
Vol 90 (13) ◽  
pp. 132102 ◽  
Author(s):  
F. M. Yang ◽  
T. C. Chang ◽  
P. T. Liu ◽  
P. H. Yeh ◽  
Y. C. Yu ◽  
...  
Keyword(s):  
Memory Device ◽  
Nanocrystal Memory ◽  
Memory Characteristics

Role of AlGaN/GaN interface traps on negative threshold voltage shift in AlGaN/GaN HEMT

2018 ◽  
Vol 142 ◽  
pp. 8-13 ◽  
Author(s):  
Amit Malik ◽  
Chandan Sharma ◽  
Robert Laishram ◽  
Rajesh Kumar Bag ◽  
Dipendra Singh Rawal ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Interface Traps ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Gan Hemt

scholarly journals Effect of size and position of gold nanocrystals embedded in gate oxide of SiO2/Si MOS structures

2016 ◽  
Vol 06 (01) ◽  
pp. 1650001 ◽  
Author(s):  
Chaitali Chakraborty ◽  
Chayanika Bose
Keyword(s):  
Oxide Semiconductor ◽  
Internal Electric Field ◽  
Interface Traps ◽  
Gold Nanocrystals ◽  
Simulation Tools ◽  
Voltage Curve ◽  
Capacitance Voltage ◽  
Mos Structures ◽  
Mos Device

The influence of single and double layered gold (Au) nanocrystals (NC), embedded in SiO2 matrix, on the electrical characteristics of metal–oxide–semiconductor (MOS) structures is reported in this communication. The size and position of the NCs are varied and study is made using Sentaurus TCAD simulation tools. In a single NC-layered MOS structure, the role of NCs is more prominent when they are placed closer to SiO2/Si[Formula: see text]substrate interface than to SiO2/Al–gate interface. In MOS structures with larger NC dots and double layered NCs, the charge storage capacity is increased due to charging of the dielectric in the presence of NCs. Higher breakdown voltage and smaller leakage current are also obtained in the case of dual NC-layered MOS device. A new phenomenon of smearing out of the capacitance–voltage curve is observed in the presence of dual NC layer indicating generation of interface traps. An internal electric field developed between these two charged NC layers is expected to generate such interface traps at the SiO2/Si interface.

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