Effect of nitrogen content in HfxTayN metal gate on work function and thermal stability of advanced metal-oxide-semiconductor devices

2007 ◽  
Vol 90 (13) ◽  
pp. 132101 ◽  
Author(s):  
Ping-Hung Tsai ◽  
Kuei-Shu Chang-Liao ◽  
Tzu-Cheng Wang ◽  
Tien-Ko Wang ◽  
Chuen-Horng Tsai ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Metal Oxide ◽  
Work Function ◽  
Nitrogen Content ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Metal Gate ◽  
Thermal Stability Of

Thermal stability of atomic layer deposited WCxNy electrodes for metal oxide semiconductor devices

2018 ◽  
Vol 123 (3) ◽  
pp. 035101 ◽  
Author(s):  
Oren Zonensain ◽  
Sivan Fadida ◽  
Ilanit Fisher ◽  
Juwen Gao ◽  
Michal Danek ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Metal Oxide ◽  
Semiconductor Devices ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Thermal Stability Of

An evaluation of thermal stability of TiB2 metal gate on Hf silicate for p-channel metal oxide semiconductor application

2008 ◽  
Vol 92 (17) ◽  
pp. 172106 ◽  
Author(s):  
S. Y. Son ◽  
P. Kumar ◽  
H. Cho ◽  
K. J. Min ◽  
C. J. Kang ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Metal Gate ◽  
Thermal Stability Of

Ultralow work function of scandium metal gate with tantalum nitride interface layer for n-channel metal oxide semiconductor application

2007 ◽  
Vol 90 (10) ◽  
pp. 103510 ◽  
Author(s):  
Musarrat Hasan ◽  
Hokyung Park ◽  
Hyundoek Yang ◽  
Hyunsang Hwang ◽  
Hyung-Suk Jung ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Work Function ◽  
Interface Layer ◽  
Metal Oxide Semiconductor ◽  
Tantalum Nitride ◽  
Oxide Semiconductor ◽  
Metal Gate
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