Work function thermal stability of RuO2-rich Ru–Si–O p-channel metal-oxide-semiconductor field-effect transistor gate electrodes

2008 ◽  
Vol 103 (7) ◽  
pp. 073702 ◽  
Author(s):  
M. Ťapajna ◽  
A. Rosová ◽  
E. Dobročka ◽  
V. Štrbík ◽  
Š. Gaži ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Metal Oxide ◽  
Work Function ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Electrodes ◽  
Effect Transistor ◽  
Thermal Stability Of

Improving the accuracy of the charge-sheet model for the long-channel metal-oxide semiconductor field-effect transistor

1987 ◽  
Vol 65 (8) ◽  
pp. 995-998
Author(s):  
N. G. Tarr
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Inversion Layer ◽  
Potential Drop ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Analytic Approximation ◽  
Effect Transistor ◽  
Long Channel

It is shown that the accuracy of the charge-sheet model for the long-channel metal-oxide-semiconductor field-effect transistor can be improved by allowing for the small potential drop across the inversion layer, and by using a more accurate analytic approximation for the charge stored in the depletion region.

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