Experimental study of the minimum metal gate thickness required to fix the effective work function in metal-oxide-semiconductor capacitors

2008 ◽  
Vol 92 (2) ◽  
pp. 023503 ◽  
Author(s):  
F. Fillot ◽  
S. Maîtrejean ◽  
I. Matko ◽  
B. Chenevier
Keyword(s):  
Experimental Study ◽  
Metal Oxide ◽  
Work Function ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Metal Gate ◽  
Effective Work ◽  
Effective Work Function

Ultralow work function of scandium metal gate with tantalum nitride interface layer for n-channel metal oxide semiconductor application

2007 ◽  
Vol 90 (10) ◽  
pp. 103510 ◽  
Author(s):  
Musarrat Hasan ◽  
Hokyung Park ◽  
Hyundoek Yang ◽  
Hyunsang Hwang ◽  
Hyung-Suk Jung ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Work Function ◽  
Interface Layer ◽  
Metal Oxide Semiconductor ◽  
Tantalum Nitride ◽  
Oxide Semiconductor ◽  
Metal Gate
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