Thermal stability of atomic layer deposited WCxNy electrodes for metal oxide semiconductor devices

Oren Zonensain; Sivan Fadida; Ilanit Fisher; Juwen Gao; Michal Danek; Moshe Eizenberg

doi:10.1063/1.5008515

Thermal stability of atomic layer deposited WCxNy electrodes for metal oxide semiconductor devices

Journal of Applied Physics ◽

10.1063/1.5008515 ◽

2018 ◽

Vol 123 (3) ◽

pp. 035101 ◽

Cited By ~ 1

Author(s):

Oren Zonensain ◽

Sivan Fadida ◽

Ilanit Fisher ◽

Juwen Gao ◽

Michal Danek ◽

...

Keyword(s):

Thermal Stability ◽

Metal Oxide ◽

Semiconductor Devices ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thermal Stability Of

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Effect of nitrogen content in HfxTayN metal gate on work function and thermal stability of advanced metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.2716311 ◽

2007 ◽

Vol 90 (13) ◽

pp. 132101 ◽

Cited By ~ 2

Author(s):

Ping-Hung Tsai ◽

Kuei-Shu Chang-Liao ◽

Tzu-Cheng Wang ◽

Tien-Ko Wang ◽

Chuen-Horng Tsai ◽

...

Keyword(s):

Thermal Stability ◽

Metal Oxide ◽

Work Function ◽

Nitrogen Content ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

Thermal Stability Of

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TiO2/HfO2 Bi-Layer Gate Stacks Grown by Atomic Layer Deposition for Germanium-Based Metal-Oxide-Semiconductor Devices Using GeOxNy Passivation Layer

Electrochemical and Solid-State Letters ◽

10.1149/1.3559770 ◽

2011 ◽

Vol 14 (5) ◽

pp. G27 ◽

Cited By ~ 12

Author(s):

Qi Xie ◽

Jan Musschoot ◽

Marc Schaekers ◽

Matty Caymax ◽

Annelies Delabie ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Semiconductor Devices ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Layer Deposition

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Improvement of Thermal Stability of Ni-Germanide with Ni/Co/Ni/TiN Structure for High Performance Ge Metal–Oxide–Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02ba02 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BA02

Author(s):

Hong-Sik Shin ◽

Se-Kyung Oh ◽

Min-Ho Kang ◽

Hyuk-Min Kwon ◽

Jungwoo Oh ◽

...

Keyword(s):

Thermal Stability ◽

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thermal Stability Of

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Work function thermal stability of RuO2-rich Ru–Si–O p-channel metal-oxide-semiconductor field-effect transistor gate electrodes

Journal of Applied Physics ◽

10.1063/1.2901016 ◽

2008 ◽

Vol 103 (7) ◽

pp. 073702 ◽

Cited By ~ 4

Author(s):

M. Ťapajna ◽

A. Rosová ◽

E. Dobročka ◽

V. Štrbík ◽

Š. Gaži ◽

...

Keyword(s):

Thermal Stability ◽

Metal Oxide ◽

Work Function ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Electrodes ◽

Effect Transistor ◽

Thermal Stability Of

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Electrical characteristics and thermal stability of HfO2 metal-oxide-semiconductor capacitors fabricated on clean reconstructed GaSb surfaces

Applied Physics Letters ◽

10.1063/1.4882643 ◽

2014 ◽

Vol 104 (23) ◽

pp. 232104 ◽

Cited By ~ 14

Author(s):

Noriyuki Miyata ◽

Akihiro Ohtake ◽

Masakazu Ichikawa ◽

Takahiro Mori ◽

Tetsuji Yasuda

Keyword(s):

Thermal Stability ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Thermal Stability Of

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Study on Thermal Stability of Plasma-PH[sub 3] Passivated HfAlO/In[sub 0.53]Ga[sub 0.47]As Gate Stack for Advanced Metal-Oxide-Semiconductor Field Effect Transistor

Electrochemical and Solid-State Letters ◽

10.1149/1.3465300 ◽

2010 ◽

Vol 13 (10) ◽

pp. H336 ◽

Cited By ~ 6

Author(s):

Sumarlina Azzah Suleiman ◽

H. J. Oh ◽

A. Du ◽

C. M. Ng ◽

S. J. Lee

Keyword(s):

Thermal Stability ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack ◽

Effect Transistor ◽

Thermal Stability Of

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Ti gate compatible with atomic-layer-deposited HfO2 for n-type metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.1871362 ◽

2005 ◽

Vol 86 (9) ◽

pp. 092107 ◽

Cited By ~ 32

Author(s):

Hyundoek Yang ◽

Yunik Son ◽

Sungkwon Baek ◽

Hyunsang Hwang ◽

Hajin Lim ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Atomic-Layer Deposited High-k Metal Gates of Ge/III Metal -Oxide-Semiconductor Devices and numerical simulations

10.7567/ssdm.2016.ps-6-05 ◽

2016 ◽

Author(s):

B.Y. Chen ◽

C.L. Chu ◽

J.L. Chen ◽

G.L. Luo ◽

T.T. Li ◽

...

Keyword(s):

Metal Oxide ◽

Numerical Simulations ◽

Semiconductor Devices ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gates ◽

High K

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Thermal stability of nanoscale Ge metal-oxide-semiconductor capacitors with ZrO2 high-k gate dielectrics on Ge epitaxial layers

Applied Physics Letters ◽

10.1063/1.2740108 ◽

2007 ◽

Vol 90 (20) ◽

pp. 202102 ◽

Cited By ~ 18

Author(s):

Jungwoo Oh ◽

Prashant Majhi ◽

Chang Yong Kang ◽

Ji-Woon Yang ◽

Hsing-Huang Tseng ◽

...

Keyword(s):

Thermal Stability ◽

Metal Oxide ◽

Gate Dielectrics ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Epitaxial Layers ◽

High K ◽

Thermal Stability Of

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Work function tuning of plasma-enhanced atomic layer deposited WCxNyelectrodes for metal/oxide/semiconductor devices

Applied Physics Letters ◽

10.1063/1.4913715 ◽

2015 ◽

Vol 106 (8) ◽

pp. 082107 ◽

Cited By ~ 9

Author(s):

Oren Zonensain ◽

Sivan Fadida ◽

Ilanit Fisher ◽

Juwen Gao ◽

Kaushik Chattopadhyay ◽

...

Keyword(s):

Metal Oxide ◽

Work Function ◽

Semiconductor Devices ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Work Function Tuning

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