Ultralow work function of scandium metal gate with tantalum nitride interface layer for n-channel metal oxide semiconductor application

2007 ◽  
Vol 90 (10) ◽  
pp. 103510 ◽  
Author(s):  
Musarrat Hasan ◽  
Hokyung Park ◽  
Hyundoek Yang ◽  
Hyunsang Hwang ◽  
Hyung-Suk Jung ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Work Function ◽  
Interface Layer ◽  
Metal Oxide Semiconductor ◽  
Tantalum Nitride ◽  
Oxide Semiconductor ◽  
Metal Gate

Effect of nitrogen content in HfxTayN metal gate on work function and thermal stability of advanced metal-oxide-semiconductor devices

2007 ◽  
Vol 90 (13) ◽  
pp. 132101 ◽  
Author(s):  
Ping-Hung Tsai ◽  
Kuei-Shu Chang-Liao ◽  
Tzu-Cheng Wang ◽  
Tien-Ko Wang ◽  
Chuen-Horng Tsai ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Metal Oxide ◽  
Work Function ◽  
Nitrogen Content ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Metal Gate ◽  
Thermal Stability Of

Work Function Modulation by Segregation of Indium through Tungsten Gate for Dual-Metal-Gate Complementary Metal Oxide Semiconductor Applications

2007 ◽  
Vol 46 (4B) ◽  
pp. 1885-1887 ◽  
Author(s):  
Kazuaki Nakajima ◽  
Masato Koyama ◽  
Tomonori Aoyama ◽  
Akira Nishiyama ◽  
Kazuhiro Eguchi ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Work Function ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Metal Gate ◽  
Dual Metal

Stacked Metal Layers as Gates for MOSFET Threshold Voltage Control

2003 ◽  
Vol 765 ◽  
Author(s):  
Wei Gao ◽  
John F. Conley ◽  
Yoshi Ono Sharp
Keyword(s):  
Metal Oxide ◽  
Work Function ◽  
Threshold Voltage ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Metal Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Flat Band ◽  
Metal Gate

AbstractTwo layer metal gate stacks allow the effective work function to be tuned by varying the thickness of the first metal layer. Metal-oxide-semiconductor (MOS) capacitors were fabricated by using two metals of very different work functions on thermal oxide gate dielectric where the bottom layer thickness is varied over a range from 0 to 50nm. Electrical and thermal stability measurements were performed on the Al on TaN metal gate stack. The effective workfunction is seen to shift from the value of one metal to the other rapidly as the thickness of the first metal layer is varied from 0 to approximately 10nm. The flat band voltage (Vfb) transition matches the workfunction difference of the two metals in the stack. The advantage of this approach when applied to metal-oxide-semiconductor-field-effect-transistors (MOSFETs) is that it allows the effective workfunction of the metal stack, and the threshold voltage (Vth) of the device to be fine tuned. It also allows for eventual dual gate complementary MOS (CMOS) device fabrication where two different work function metal stacks are necessary, without processing directly on the gate dielectric. A model is proposed to elucidate the workfunction tuning mechanism.

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