Si–Ge interdiffusion in strained Si/strained SiGe heterostructures and implications for enhanced mobility metal-oxide-semiconductor field-effect transistors

Guangrui (Maggie) Xia; Judy L. Hoyt; Michael Canonico

doi:10.1063/1.2430904

Si–Ge interdiffusion in strained Si/strained SiGe heterostructures and implications for enhanced mobility metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.2430904 ◽

2007 ◽

Vol 101 (4) ◽

pp. 044901 ◽

Cited By ~ 36

Author(s):

Guangrui (Maggie) Xia ◽

Judy L. Hoyt ◽

Michael Canonico

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Enhanced Mobility ◽

Strained Sige

Download Full-text

Impact of Ge Content on Flicker Noise Behavior of Strained-SiGe p-Type Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c036 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C036 ◽

Cited By ~ 5

Author(s):

San-Lein Wu ◽

Chung Yi Wu ◽

Hau-Yu Lin ◽

Cheng-Wen Kuo ◽

Shin-Hsin Chen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Flicker Noise ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

P Type ◽

Strained Sige

Download Full-text

Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1499213 ◽

2002 ◽

Vol 92 (7) ◽

pp. 3745-3751 ◽

Cited By ~ 145

Author(s):

C. W. Leitz ◽

M. T. Currie ◽

M. L. Lee ◽

Z.-Y. Cheng ◽

D. A. Antoniadis ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Limited Mobility ◽

Alloy Scattering

Download Full-text

Hole mobility enhancements in strained Si/Si1−yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1−xGex (x

Applied Physics Letters ◽

10.1063/1.1423774 ◽

2001 ◽

Vol 79 (25) ◽

pp. 4246-4248 ◽

Cited By ~ 92

Author(s):

C. W. Leitz ◽

M. T. Currie ◽

M. L. Lee ◽

Z.-Y. Cheng ◽

D. A. Antoniadis ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

P Type

Download Full-text

Elimination of parasitic channels in strained-Si p-channel metal-oxide-semiconductor field-effect transistors

Semiconductor Science and Technology ◽

10.1088/0268-1242/16/3/306 ◽

2001 ◽

Vol 16 (3) ◽

pp. 155-159 ◽

Cited By ~ 8

Author(s):

Nobuyuki Sugii ◽

Shinya Yamaguchi ◽

Kiyokazu Nakagawa

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si

Download Full-text

Characterization of silicon–carbon alloy materials for future strained Si metal oxide semiconductor field effect transistors

Thin Solid Films ◽

10.1016/j.tsf.2012.10.099 ◽

2013 ◽

Vol 529 ◽

pp. 444-448 ◽

Cited By ~ 4

Author(s):

B.-F. Hsieh ◽

S.T. Chang ◽

M.H. Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Silicon Carbon

Download Full-text

Strained Si n-channel metal-oxide-semiconductor field-effect transistors formed on very thin SiGe relaxed layer fabricated by ion implantation technique

Applied Physics Letters ◽

10.1063/1.2739324 ◽

2007 ◽

Vol 90 (20) ◽

pp. 202101 ◽

Cited By ~ 8

Author(s):

K. Sawano ◽

A. Fukumoto ◽

Y. Hoshi ◽

Y. Shiraki ◽

J. Yamanaka ◽

...

Keyword(s):

Ion Implantation ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Implantation Technique ◽

Strained Si

Download Full-text

Study of Enhanced Impact Ionization in Strained-SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c038 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C038

Author(s):

Po-Chin Huang ◽

Ting-Kuo Kang ◽

Bo-Chin Wang ◽

San-Lein Wu ◽

Shoou-Jinn Chang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Impact Ionization ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Sige

Download Full-text

Effects of substrate strain and electrical stress on lattice dynamics, defects, and traps in strained-Si/Si0.81Ge0.19 n-type metal-oxide-semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.4718015 ◽

2012 ◽

Vol 111 (10) ◽

pp. 104507 ◽

Cited By ~ 2

Author(s):

C. Mukherjee ◽

S. Sengupta ◽

C. K. Maiti ◽

T. K. Maiti

Keyword(s):

Metal Oxide ◽

Lattice Dynamics ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Electrical Stress ◽

Substrate Strain

Download Full-text

Impact of the strained SiGe source/drain on hot carrier reliability for 45nm p-type metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.2904647 ◽

2008 ◽

Vol 92 (13) ◽

pp. 133504 ◽

Cited By ~ 8

Author(s):

C. Y. Cheng ◽

Y. K. Fang ◽

J. C. Hsieh ◽

H. Hsia ◽

W. M. Chen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

P Type ◽

Strained Sige

Download Full-text

Nanoscale stress analysis of strained-Si metal-oxide-semiconductor field-effect transistors by quantitative electron diffraction contrast imaging

Applied Physics Letters ◽

10.1063/1.2135388 ◽

2005 ◽

Vol 87 (22) ◽

pp. 222111 ◽

Cited By ~ 11

Author(s):

J. Li ◽

D. Anjum ◽

R. Hull ◽

G. Xia ◽

J. L. Hoyt

Keyword(s):

Electron Diffraction ◽

Metal Oxide ◽

Stress Analysis ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Contrast Imaging ◽

Strained Si ◽

Diffraction Contrast

Download Full-text