Effects of substrate strain and electrical stress on lattice dynamics, defects, and traps in strained-Si/Si0.81Ge0.19 n-type metal-oxide-semiconductor field effect transistors

C. Mukherjee; S. Sengupta; C. K. Maiti; T. K. Maiti

doi:10.1063/1.4718015

Effects of substrate strain and electrical stress on lattice dynamics, defects, and traps in strained-Si/Si0.81Ge0.19 n-type metal-oxide-semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.4718015 ◽

2012 ◽

Vol 111 (10) ◽

pp. 104507 ◽

Cited By ~ 2

Author(s):

C. Mukherjee ◽

S. Sengupta ◽

C. K. Maiti ◽

T. K. Maiti

Keyword(s):

Metal Oxide ◽

Lattice Dynamics ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Electrical Stress ◽

Substrate Strain

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Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1499213 ◽

2002 ◽

Vol 92 (7) ◽

pp. 3745-3751 ◽

Cited By ~ 145

Author(s):

C. W. Leitz ◽

M. T. Currie ◽

M. L. Lee ◽

Z.-Y. Cheng ◽

D. A. Antoniadis ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Limited Mobility ◽

Alloy Scattering

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Hole mobility enhancements in strained Si/Si1−yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1−xGex (x

Applied Physics Letters ◽

10.1063/1.1423774 ◽

2001 ◽

Vol 79 (25) ◽

pp. 4246-4248 ◽

Cited By ~ 92

Author(s):

C. W. Leitz ◽

M. T. Currie ◽

M. L. Lee ◽

Z.-Y. Cheng ◽

D. A. Antoniadis ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

P Type

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Elimination of parasitic channels in strained-Si p-channel metal-oxide-semiconductor field-effect transistors

Semiconductor Science and Technology ◽

10.1088/0268-1242/16/3/306 ◽

2001 ◽

Vol 16 (3) ◽

pp. 155-159 ◽

Cited By ~ 8

Author(s):

Nobuyuki Sugii ◽

Shinya Yamaguchi ◽

Kiyokazu Nakagawa

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si

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Characterization of silicon–carbon alloy materials for future strained Si metal oxide semiconductor field effect transistors

Thin Solid Films ◽

10.1016/j.tsf.2012.10.099 ◽

2013 ◽

Vol 529 ◽

pp. 444-448 ◽

Cited By ~ 4

Author(s):

B.-F. Hsieh ◽

S.T. Chang ◽

M.H. Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Silicon Carbon

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Strained Si n-channel metal-oxide-semiconductor field-effect transistors formed on very thin SiGe relaxed layer fabricated by ion implantation technique

Applied Physics Letters ◽

10.1063/1.2739324 ◽

2007 ◽

Vol 90 (20) ◽

pp. 202101 ◽

Cited By ~ 8

Author(s):

K. Sawano ◽

A. Fukumoto ◽

Y. Hoshi ◽

Y. Shiraki ◽

J. Yamanaka ◽

...

Keyword(s):

Ion Implantation ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Implantation Technique ◽

Strained Si

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Nanoscale stress analysis of strained-Si metal-oxide-semiconductor field-effect transistors by quantitative electron diffraction contrast imaging

Applied Physics Letters ◽

10.1063/1.2135388 ◽

2005 ◽

Vol 87 (22) ◽

pp. 222111 ◽

Cited By ~ 11

Author(s):

J. Li ◽

D. Anjum ◽

R. Hull ◽

G. Xia ◽

J. L. Hoyt

Keyword(s):

Electron Diffraction ◽

Metal Oxide ◽

Stress Analysis ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Contrast Imaging ◽

Strained Si ◽

Diffraction Contrast

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Analytical Modeling of Threshold Voltage of Short-Channel Strained-Si on Silicon–Germanium-On-Insulator (SGOI) Metal–Oxide–Semiconductor Field-Effect Transistors with Localized Charges

Journal of Computational and Theoretical Nanoscience ◽

10.1166/jctn.2014.3332 ◽

2014 ◽

Vol 11 (1) ◽

pp. 165-172 ◽

Cited By ~ 1

Author(s):

Mirgender Kumar ◽

Sarvesh Dubey ◽

Pramod Kumar Tiwari ◽

S. Jit

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Silicon Germanium ◽

Field Effect ◽

Analytical Modeling ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Strained Si

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Variation of Threshold Voltage in Strained Si Metal–Oxide–Semiconductor Field-Effect Transistors Induced by Non-uniform Strain Distribution in Strained-Si Channels on Silicon–Germanium-on-Insulator Substrates

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.4403 ◽

2008 ◽

Vol 47 (6) ◽

pp. 4403-4407 ◽

Cited By ~ 5

Author(s):

Naoharu Sugiyama ◽

Toshinori Numata ◽

Norio Hirashita ◽

Toshifumi Irisawa ◽

Shin-ichi Takagi

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Silicon Germanium ◽

Strain Distribution ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Uniform Strain ◽

Oxide Semiconductor ◽

Strained Si

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Physics of enhanced impact ionization in strained-Si p-channel metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.2909082 ◽

2008 ◽

Vol 92 (15) ◽

pp. 153501 ◽

Cited By ~ 3

Author(s):

Ting-Kuo Kang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Impact Ionization ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si

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Impact of virtual substrate growth on high performance strained Si/SiGe double quantum well metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1619197 ◽

2003 ◽

Vol 94 (10) ◽

pp. 6855-6863 ◽

Cited By ~ 13

Author(s):

S. H. Olsen ◽

A. G. O’Neill ◽

S. Chattopadhyay ◽

K. S. K. Kwa ◽

L. S. Driscoll ◽

...

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Quantum ◽

Strained Si ◽

Double Quantum Well

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