Impact of the strained SiGe source/drain on hot carrier reliability for 45nm p-type metal-oxide-semiconductor field-effect transistors

C. Y. Cheng; Y. K. Fang; J. C. Hsieh; H. Hsia; W. M. Chen; S. S. Lin; C. S. Hou

doi:10.1063/1.2904647

Impact of the strained SiGe source/drain on hot carrier reliability for 45nm p-type metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.2904647 ◽

2008 ◽

Vol 92 (13) ◽

pp. 133504 ◽

Cited By ~ 8

Author(s):

C. Y. Cheng ◽

Y. K. Fang ◽

J. C. Hsieh ◽

H. Hsia ◽

W. M. Chen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

P Type ◽

Strained Sige

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Impact of Ge Content on Flicker Noise Behavior of Strained-SiGe p-Type Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c036 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C036 ◽

Cited By ~ 5

Author(s):

San-Lein Wu ◽

Chung Yi Wu ◽

Hau-Yu Lin ◽

Cheng-Wen Kuo ◽

Shin-Hsin Chen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Flicker Noise ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

P Type ◽

Strained Sige

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Hot Carrier Degradations of Dynamic Threshold Silicon on Insulator p-Type Metal–Oxide–Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.1300 ◽

2004 ◽

Vol 43 (4A) ◽

pp. 1300-1304

Author(s):

Tien-Sheng Chao ◽

Yao-Jen Lee ◽

Chun-Yang Huang ◽

Horng-Chih Lin ◽

Yiming Li ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Dynamic Threshold ◽

Hot Carrier ◽

P Type

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Selective Growth of B- and C-Doped SiGe Layers in Unprocessed and Recessed Si Openings for p-type Metal-Oxide-Semiconductor Field-Effect Transistors Application

Journal of The Electrochemical Society ◽

10.1149/1.3363736 ◽

2010 ◽

Vol 157 (6) ◽

pp. H633 ◽

Cited By ~ 13

Author(s):

M. Kolahdouz ◽

P. Tabib Zadeh Adibi ◽

A. Afshar Farniya ◽

S. Shayestehaminzadeh ◽

E. Trybom ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Selective Growth ◽

Oxide Semiconductor ◽

P Type

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Effect of La$_{2}$O$_{3}$ Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-$k$/Metal Gate Stacks

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc10 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC10

Author(s):

Dongwoo Kim ◽

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Taekyung Oh ◽

Bongkoo Kang

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Metal Gate ◽

Hot Carrier ◽

High K

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Suppression of Parasitic Bipolar Action and Improvement of Hot-Carrier Reliability in Fully-Depleted Metal-Oxide-Semiconductor Field Effect Transistors on SIMOX (Separation by IMplanted Oxygen) Introducing Recombination Centers near Source Junction

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.6175 ◽

1997 ◽

Vol 36 (Part 1, No. 10) ◽

pp. 6175-6180 ◽

Cited By ~ 4

Author(s):

Toshiaki Tsuchiya ◽

Terukazu Ohno ◽

Satoshi Tazawa ◽

Masaaki Tomizawa

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Hot Carrier ◽

Recombination Centers

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The Influence of Hf-Composition on Atomic Layer Deposition HfSiON Gated Metal–Oxide–Semiconductor Field-Effect Transistors after Channel-Hot-Carrier Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c009 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C009 ◽

Cited By ~ 5

Author(s):

Shuang-Yuan Chen ◽

Hung-Wen Chen ◽

Chuan-Hsi Liu ◽

Li-Wei Cheng

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Layer Deposition ◽

Hot Carrier Stress

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Correlation between Charge Pumping Method and Direct-Current Current Voltage Method in p-Type Metal-Oxide-Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.4696 ◽

1999 ◽

Vol 38 (Part 1, No. 8) ◽

pp. 4696-4698 ◽

Cited By ~ 6

Author(s):

Bin-Bin Jie ◽

Kok-Hooi Ng ◽

Ming-Fu Li ◽

Keng-Foo Lo

Keyword(s):

Metal Oxide ◽

Direct Current ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Charge Pumping ◽

Current Voltage ◽

P Type

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Compact Hot-Electron Induced Oxide Trapping Charge and Post-Stress Drain Current Modeling for Buried-Channel p-Type Metal–Oxide–Semiconductor Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.6200 ◽

2008 ◽

Vol 47 (8) ◽

pp. 6200-6204 ◽

Cited By ~ 1

Author(s):

Chorng-Jye Sheu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Electron ◽

Buried Channel ◽

P Type ◽

Post Stress

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The Generation Process of Interface Traps by Hot-Carrier Injection in Nanoscale Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc09 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC09 ◽

Cited By ~ 2

Author(s):

Ming Hu ◽

Takuya Yamane ◽

Toshiaki Tsuchiya

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Generation Process ◽

Interface Traps ◽

Carrier Injection ◽

Hot Carrier ◽

Hot Carrier Injection

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On resolving hot carrier induced degradation mechanisms in silicon‐on‐sapphire metal‐oxide‐semiconductor field‐effect transistors

Applied Physics Letters ◽

10.1063/1.110646 ◽

1993 ◽

Vol 63 (14) ◽

pp. 1912-1914 ◽

Cited By ~ 1

Author(s):

E. Y. Chao ◽

G. P. Li

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Degradation Mechanisms ◽

Hot Carrier

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