Strained Si n-channel metal-oxide-semiconductor field-effect transistors formed on very thin SiGe relaxed layer fabricated by ion implantation technique

2007 ◽  
Vol 90 (20) ◽  
pp. 202101 ◽  
Author(s):  
K. Sawano ◽  
A. Fukumoto ◽  
Y. Hoshi ◽  
Y. Shiraki ◽  
J. Yamanaka ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Implantation Technique ◽  
Strained Si

Hole mobility enhancements in strained Si/Si1−yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1−xGex (x

2001 ◽  
Vol 79 (25) ◽  
pp. 4246-4248 ◽  
Author(s):  
C. W. Leitz ◽  
M. T. Currie ◽  
M. L. Lee ◽  
Z.-Y. Cheng ◽  
D. A. Antoniadis ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Strained Si ◽  
P Type
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