Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal–oxide–semiconductor field-effect transistors

C. W. Leitz; M. T. Currie; M. L. Lee; Z.-Y. Cheng; D. A. Antoniadis; E. A. Fitzgerald

doi:10.1063/1.1499213

Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1499213 ◽

2002 ◽

Vol 92 (7) ◽

pp. 3745-3751 ◽

Cited By ~ 145

Author(s):

C. W. Leitz ◽

M. T. Currie ◽

M. L. Lee ◽

Z.-Y. Cheng ◽

D. A. Antoniadis ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Limited Mobility ◽

Alloy Scattering

Download Full-text

Hole mobility enhancements in strained Si/Si1−yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1−xGex (x

Applied Physics Letters ◽

10.1063/1.1423774 ◽

2001 ◽

Vol 79 (25) ◽

pp. 4246-4248 ◽

Cited By ~ 92

Author(s):

C. W. Leitz ◽

M. T. Currie ◽

M. L. Lee ◽

Z.-Y. Cheng ◽

D. A. Antoniadis ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

P Type

Download Full-text

Dramatic enhancement of low electric-field hole mobility in metal source/drain Ge p-channel metal-oxide-semiconductor field-effect transistors by introduction of Al and Hf into SiO2/GeO2 gate stack

Applied Physics Letters ◽

10.1063/1.4821546 ◽

2013 ◽

Vol 103 (12) ◽

pp. 122106 ◽

Cited By ~ 20

Author(s):

Keisuke Yamamoto ◽

Takahiro Sada ◽

Dong Wang ◽

Hiroshi Nakashima

Keyword(s):

Electric Field ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack ◽

Metal Source

Download Full-text

Channel direction, effective field, and temperature dependencies of hole mobility in (110)-oriented Ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistors fabricated by Ge condensation technique

Journal of Applied Physics ◽

10.1063/1.3537919 ◽

2011 ◽

Vol 109 (3) ◽

pp. 033709 ◽

Cited By ~ 46

Author(s):

Sanjeewa Dissanayake ◽

Yi Zhao ◽

S. Sugahara ◽

Mitsuru Takenaka ◽

Shinichi Takagi

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Effective Field ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

Download Full-text

Experimental study of uniaxial stress effects on Coulomb-limited mobility in p-type metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.2807832 ◽

2007 ◽

Vol 91 (20) ◽

pp. 203506 ◽

Cited By ~ 4

Author(s):

Shigeki Kobayashi ◽

Masumi Saitoh ◽

Yukio Nakabayashi ◽

Ken Uchida

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Uniaxial Stress ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Limited Mobility ◽

Stress Effects ◽

P Type

Download Full-text

Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.362953 ◽

1996 ◽

Vol 80 (3) ◽

pp. 1567-1577 ◽

Cited By ~ 381

Author(s):

Shin‐ichi Takagi ◽

Judy L. Hoyt ◽

Jeffrey J. Welser ◽

James F. Gibbons

Keyword(s):

Metal Oxide ◽

Comparative Study ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

Limited Mobility

Download Full-text

Elimination of parasitic channels in strained-Si p-channel metal-oxide-semiconductor field-effect transistors

Semiconductor Science and Technology ◽

10.1088/0268-1242/16/3/306 ◽

2001 ◽

Vol 16 (3) ◽

pp. 155-159 ◽

Cited By ~ 8

Author(s):

Nobuyuki Sugii ◽

Shinya Yamaguchi ◽

Kiyokazu Nakagawa

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si

Download Full-text

Characterization of silicon–carbon alloy materials for future strained Si metal oxide semiconductor field effect transistors

Thin Solid Films ◽

10.1016/j.tsf.2012.10.099 ◽

2013 ◽

Vol 529 ◽

pp. 444-448 ◽

Cited By ~ 4

Author(s):

B.-F. Hsieh ◽

S.T. Chang ◽

M.H. Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Silicon Carbon

Download Full-text

Strained Si n-channel metal-oxide-semiconductor field-effect transistors formed on very thin SiGe relaxed layer fabricated by ion implantation technique

Applied Physics Letters ◽

10.1063/1.2739324 ◽

2007 ◽

Vol 90 (20) ◽

pp. 202101 ◽

Cited By ~ 8

Author(s):

K. Sawano ◽

A. Fukumoto ◽

Y. Hoshi ◽

Y. Shiraki ◽

J. Yamanaka ◽

...

Keyword(s):

Ion Implantation ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Implantation Technique ◽

Strained Si

Download Full-text

Hole-Mobility and Drive-Current Enhancement in Ge-Rich Strained Silicon–Germanium Wire Tri-Gate Metal–Oxide–Semiconductor Field-Effect Transistors with Nickel-Germanosilicide Metal Source and Drain

Applied Physics Express ◽

10.1143/apex.3.124201 ◽

2010 ◽

Vol 3 (12) ◽

pp. 124201 ◽

Cited By ~ 12

Author(s):

Keiji Ikeda ◽

Minoru Oda ◽

Yuuichi Kamimuta ◽

Yoshihiko Moriyama ◽

Tsutomu Tezuka

Keyword(s):

Metal Oxide ◽

Silicon Germanium ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Silicon ◽

Drive Current ◽

Metal Source

Download Full-text

Study of quantum confinement effects on hole mobility in silicon and germanium double gate metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3244205 ◽

2009 ◽

Vol 95 (14) ◽

pp. 142103 ◽

Cited By ~ 2

Author(s):

Chun-Jung Tang ◽

Tahui Wang ◽

Chih-Sheng Chang

Keyword(s):

Metal Oxide ◽

Quantum Confinement ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Quantum Confinement Effects ◽

Silicon And Germanium

Download Full-text