Nanoscale stress analysis of strained-Si metal-oxide-semiconductor field-effect transistors by quantitative electron diffraction contrast imaging

2005 ◽  
Vol 87 (22) ◽  
pp. 222111 ◽  
Author(s):  
J. Li ◽  
D. Anjum ◽  
R. Hull ◽  
G. Xia ◽  
J. L. Hoyt
Keyword(s):  
Electron Diffraction ◽  
Metal Oxide ◽  
Stress Analysis ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Contrast Imaging ◽  
Strained Si ◽  
Diffraction Contrast

Hole mobility enhancements in strained Si/Si1−yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1−xGex (x

2001 ◽  
Vol 79 (25) ◽  
pp. 4246-4248 ◽  
Author(s):  
C. W. Leitz ◽  
M. T. Currie ◽  
M. L. Lee ◽  
Z.-Y. Cheng ◽  
D. A. Antoniadis ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Strained Si ◽  
P Type
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