Electric control of room temperature ferromagnetism in a Pb(Zr0.2Ti0.8)O3∕La0.85Ba0.15MnO3 field-effect transistor

2006 ◽  
Vol 89 (24) ◽  
pp. 242506 ◽  
Author(s):  
Teruo Kanki ◽  
Hidekazu Tanaka ◽  
Tomoji Kawai
Keyword(s):  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Room Temperature Ferromagnetism ◽  
Electric Control ◽  
Effect Transistor

Spin field-effect transistor with electric control

2009 ◽  
Vol 105 (10) ◽  
pp. 103713 ◽  
Author(s):  
R. N. Gurzhi ◽  
A. N. Kalinenko ◽  
A. I. Kopeliovich ◽  
A. V. Yanovsky
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Spin Field ◽  
Electric Control ◽  
Effect Transistor

Spin transport in epitaxial Fe3O4/GaAs lateral structured device

2022 ◽  
Author(s):  
Zhaocong Huang ◽  
Wenqing Liu ◽  
Jian Liang ◽  
Qingjie Guo ◽  
Ya Zhai ◽  
...  
Keyword(s):  
Data Storage ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Spin Transport ◽  
Spintronic Devices ◽  
Spin Dependent Transport ◽  
Effect Transistor ◽  
Dependent Transport ◽  
Further Development

Abstract Research in the spintronics community has been intensively stimulated by the proposal of the spin field-effect transistor (SFET), which has the potential for combining the data storage and process in a single device. Here we report the spin dependent transport on a Fe3O4/GaAs based lateral structured device. Parallel and antiparallel states of two Fe3O4 electrodes are achieved. A clear MR loop shows the perfect butterfly shape at room temperature, of which the intensity decreases with the reducing current, showing the strong bias-dependence. Understanding the spin dependent transport properties in this architecture has strong implication in further development of the spintronic devices for room-temperature SFET.

Quantum Dot Made in Metal Oxide Silicon-Nanowire Field Effect Transistor Working at Room Temperature.

Nano Letters ◽  
2015 ◽  
Vol 15 (5) ◽  
pp. 2958-2964 ◽  
Author(s):  
Romain Lavieville ◽  
François Triozon ◽  
Sylvain Barraud ◽  
Andrea Corna ◽  
Xavier Jehl ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Metal Oxide ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Effect Transistor ◽  
Metal Oxide Silicon ◽  
Made In

scholarly journals Investigation of Organic Field-Effect Transistor (OFET) based NO2 Sensing Response using Low-Cost Green Synthesized Zinc Oxide Nanoparticles

2020 ◽  
Vol 33 (1) ◽  
pp. 31-36
Author(s):  
G. Balanagireddy ◽  
Ashwath Narayana ◽  
M. Roopa
Keyword(s):  
Zinc Oxide ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Low Cost ◽  
Average Particle Size ◽  
Microwave Assisted Synthesis ◽  
Average Particle ◽  
Nanostructured Particles ◽  
Effect Transistor

A low-cost and green-synthesized zinc oxide nanostructured particles are extensively studied owing to their remarkable and ample characteristics with less toxicity and eco-friendly approach. The present work comprehends the green synthesis of ZnO nanostructured particles using bougainvillea leaf extract-arbitrated microwave-assisted synthesis and their use in field effect transistor for nitrogen dioxide sensing at room temperature. The as-synthesized nanoparticles were characterized using analytical techniques; XRD determined the pure crystallite structure with no impurities, SEM confirmed the spherical shape of nanoparticles with ~20 nm (average particle size) and the atomic weight percentage were analyzed using EDAX, notable photophysical properties were revealed from absorption and emission spectra performed using UV-visible spectroscopy. Poly(3-hexylthiophene) and ZnO nanoparticles were employed in the field effect transistor (p-type) for NO2 sensing at room temperature with the mobility (field-effect) of ~10-4 cm2 V-1 s-1. The sensitivity of the fabricated OFET device was extracted from the transistor characteristics (at Vgs = -30 V and Vds = -40 V) found to be ~4.8 × 10-3 nA/ppm. The device exhibited engrossing characteristics such as excellent recoverability (> 95%), with ultrafast response time (< 30 s) and greater sensitivity with high stability as can be assessed from the electrical characteristics.

Electrical Stabilization of Diamond Mis Interface and Misfets by Ultrahigh-Vacuum Process

1998 ◽  
Vol 512 ◽  
Author(s):  
Young Yun ◽  
Tetsuro Maki ◽  
Hiroyuki Tanaka ◽  
Takeshi Kobayashi
Keyword(s):  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Ultrahigh Vacuum ◽  
State Density ◽  
Metal Insulator ◽  
Effective Mobility ◽  
Effect Transistor ◽  
Oxygen Process ◽  
Device Operation

ABSTRACTIn order to obtain electrically stabilized MIS interface, a diamond metal-insulator- semiconductor field-effect transistor (MISFET) was prepared by means of reduced-oxygen process including ultrahigh-vacuum (UHV) process, and its electrical properties were closely investigated. According to the results, observed effective mobility (μeff) was 400 cm2/Vs at room temperature, which is the highest value obtained until now in the diamond FET at room temperature. The transconductance (gm) and surface state density (Nss) of the device operation region was 5mS/mm and ∼ 1010/cm2 eV, respectively, which is also comparable with conventional Si MOSFETs with the same gate length (Lg = 30μm).

Sign in / Sign up

Export Citation Format

Share Document