Room-temperature operation of a memory-effect AlGaAs/GaAs heterojunction field-effect transistor with self-assembled InAs nanodots

2000 ◽  
Vol 76 (11) ◽  
pp. 1464-1466 ◽  
Author(s):  
K. Koike ◽  
K. Saitoh ◽  
S. Li ◽  
S. Sasa ◽  
M. Inoue ◽  
...  
Keyword(s):  
Memory Effect ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Self Assembled ◽  
Room Temperature Operation

scholarly journals Room-Temperature Hysteresis in a Hole-Based Quantum Dot Memory Structure

2013 ◽  
Vol 2013 ◽  
pp. 1-4 ◽  
Author(s):  
Tobias Nowozin ◽  
Michael Narodovitch ◽  
Leo Bonato ◽  
Dieter Bimberg ◽  
Mohammed N. Ajour ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Memory Effect ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Temperature Hysteresis ◽  
Effect Transistor ◽  
Logic State ◽  
Storage Times

We demonstrate a memory effect in self-assembled InAs/Al0.9Ga0.1As quantum dots (QDs) near room temperature. The QD layer is embedded into a modulation-doped field-effect transistor (MODFET) which allows to charge and discharge the QDs and read out the logic state of the QDs. The hole storage times in the QDs decrease from seconds at 200 K down to milliseconds at room temperature.

Spin transport in epitaxial Fe3O4/GaAs lateral structured device

2022 ◽  
Author(s):  
Zhaocong Huang ◽  
Wenqing Liu ◽  
Jian Liang ◽  
Qingjie Guo ◽  
Ya Zhai ◽  
...  
Keyword(s):  
Data Storage ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Spin Transport ◽  
Spintronic Devices ◽  
Spin Dependent Transport ◽  
Effect Transistor ◽  
Dependent Transport ◽  
Further Development

Abstract Research in the spintronics community has been intensively stimulated by the proposal of the spin field-effect transistor (SFET), which has the potential for combining the data storage and process in a single device. Here we report the spin dependent transport on a Fe3O4/GaAs based lateral structured device. Parallel and antiparallel states of two Fe3O4 electrodes are achieved. A clear MR loop shows the perfect butterfly shape at room temperature, of which the intensity decreases with the reducing current, showing the strong bias-dependence. Understanding the spin dependent transport properties in this architecture has strong implication in further development of the spintronic devices for room-temperature SFET.

Quantum Dot Made in Metal Oxide Silicon-Nanowire Field Effect Transistor Working at Room Temperature.

Nano Letters ◽  
2015 ◽  
Vol 15 (5) ◽  
pp. 2958-2964 ◽  
Author(s):  
Romain Lavieville ◽  
François Triozon ◽  
Sylvain Barraud ◽  
Andrea Corna ◽  
Xavier Jehl ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Metal Oxide ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Effect Transistor ◽  
Metal Oxide Silicon ◽  
Made In
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