Electrical-field control of metal–insulator transition at room temperature in Pb(Zr0.2Ti0.8)O3/La1−xBaxMnO3 field-effect transistor

2003 ◽  
Vol 83 (23) ◽  
pp. 4860-4862 ◽  
Author(s):  
Teruo Kanki ◽  
Young-Geun Park ◽  
Hidekazu Tanaka ◽  
Tomoji Kawai
Keyword(s):  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Electrical Field ◽  
Metal Insulator ◽  
Field Control ◽  
Effect Transistor

A new field‐effect transistor based on the metal–insulator transition

1996 ◽  
Vol 79 (5) ◽  
pp. 2542-2548
Author(s):  
Kozo Katayama ◽  
Digh Hisamoto ◽  
Yoshitaka Nakamura ◽  
Nobuyoshi Kobayashi ◽  
Ryo Nagai
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Effect Transistor

Gate-Tunable Thermal Metal–Insulator Transition in VO2 Monolithically Integrated into a WSe2 Field-Effect Transistor

2019 ◽  
Vol 11 (3) ◽  
pp. 3224-3230 ◽  
Author(s):  
Mahito Yamamoto ◽  
Ryo Nouchi ◽  
Teruo Kanki ◽  
Azusa N. Hattori ◽  
Kenji Watanabe ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Monolithically Integrated ◽  
Effect Transistor

Electrical Stabilization of Diamond Mis Interface and Misfets by Ultrahigh-Vacuum Process

1998 ◽  
Vol 512 ◽  
Author(s):  
Young Yun ◽  
Tetsuro Maki ◽  
Hiroyuki Tanaka ◽  
Takeshi Kobayashi
Keyword(s):  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Ultrahigh Vacuum ◽  
State Density ◽  
Metal Insulator ◽  
Effective Mobility ◽  
Effect Transistor ◽  
Oxygen Process ◽  
Device Operation

ABSTRACTIn order to obtain electrically stabilized MIS interface, a diamond metal-insulator- semiconductor field-effect transistor (MISFET) was prepared by means of reduced-oxygen process including ultrahigh-vacuum (UHV) process, and its electrical properties were closely investigated. According to the results, observed effective mobility (μeff) was 400 cm2/Vs at room temperature, which is the highest value obtained until now in the diamond FET at room temperature. The transconductance (gm) and surface state density (Nss) of the device operation region was 5mS/mm and ∼ 1010/cm2 eV, respectively, which is also comparable with conventional Si MOSFETs with the same gate length (Lg = 30μm).

Spin transport in epitaxial Fe3O4/GaAs lateral structured device

2022 ◽  
Author(s):  
Zhaocong Huang ◽  
Wenqing Liu ◽  
Jian Liang ◽  
Qingjie Guo ◽  
Ya Zhai ◽  
...  
Keyword(s):  
Data Storage ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Spin Transport ◽  
Spintronic Devices ◽  
Spin Dependent Transport ◽  
Effect Transistor ◽  
Dependent Transport ◽  
Further Development

Abstract Research in the spintronics community has been intensively stimulated by the proposal of the spin field-effect transistor (SFET), which has the potential for combining the data storage and process in a single device. Here we report the spin dependent transport on a Fe3O4/GaAs based lateral structured device. Parallel and antiparallel states of two Fe3O4 electrodes are achieved. A clear MR loop shows the perfect butterfly shape at room temperature, of which the intensity decreases with the reducing current, showing the strong bias-dependence. Understanding the spin dependent transport properties in this architecture has strong implication in further development of the spintronic devices for room-temperature SFET.

Sign in / Sign up

Export Citation Format

Share Document