Room-temperature-operating data processing circuit based on single-electron transfer and detection with metal-oxide-semiconductor field-effect transistor technology

2006 ◽  
Vol 88 (18) ◽  
pp. 183101 ◽  
Author(s):  
Katsuhiko Nishiguchi ◽  
Akira Fujiwara ◽  
Yukinori Ono ◽  
Hiroshi Inokawa ◽  
Yasuo Takahashi
Keyword(s):  
Electron Transfer ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Single Electron Transfer ◽  
Temperature Operating ◽  
Effect Transistor ◽  
Processing Circuit

scholarly journals 4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics

Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3554
Author(s):  
Jaeyeop Na ◽  
Jinhee Cheon ◽  
Kwangsoo Kim
Keyword(s):  
Dynamic Characteristics ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Switching Loss ◽  
Switching Speed ◽  
Polysilicon Gate ◽  
Effect Transistor ◽  
Switching Characteristics

In this paper, a novel 4H-SiC split heterojunction gate double trench metal-oxide-semiconductor field-effect transistor (SHG-DTMOS) is proposed to improve switching speed and loss. The device modifies the split gate double trench MOSFET (SG-DTMOS) by changing the N+ polysilicon split gate to the P+ polysilicon split gate. It has two separate P+ shielding regions under the gate to use the P+ split polysilicon gate as a heterojunction body diode and prevent reverse leakage `current. The static and most dynamic characteristics of the SHG-DTMOS are almost like those of the SG-DTMOS. However, the reverse recovery charge is improved by 65.83% and 73.45%, and the switching loss is improved by 54.84% and 44.98%, respectively, compared with the conventional double trench MOSFET (Con-DTMOS) and SG-DTMOS owing to the heterojunction.

Improving the accuracy of the charge-sheet model for the long-channel metal-oxide semiconductor field-effect transistor

1987 ◽  
Vol 65 (8) ◽  
pp. 995-998
Author(s):  
N. G. Tarr
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Inversion Layer ◽  
Potential Drop ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Analytic Approximation ◽  
Effect Transistor ◽  
Long Channel

It is shown that the accuracy of the charge-sheet model for the long-channel metal-oxide-semiconductor field-effect transistor can be improved by allowing for the small potential drop across the inversion layer, and by using a more accurate analytic approximation for the charge stored in the depletion region.

Effect of Metal - Silicon Nanowire Contacts on the Performance of Accumulation Metal Oxide Semiconductor Field Effect Transistor

2008 ◽  
Vol 1144 ◽  
Author(s):  
Pranav Garg ◽  
Yi Hong ◽  
Md. Mash-Hud Iqbal ◽  
Stephen J. Fonash
Keyword(s):  
Metal Oxide ◽  
Silicon Nanowires ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Manufacturing Cost ◽  
Effect Transistor ◽  
The Impact

ABSTRACTRecently, we have experimentally demonstrated a very simply structured unipolar accumulation-type metal oxide semiconductor field effect transistor (AMOSFET) using grow-in-place silicon nanowires. The AMOSFET consists of a single doping type nanowire, metal source and drain contacts which are separated by a partially gated region. Despite its simple configuration, it is capable of high performance thereby offering the potential of a low manufacturing-cost transistor. Since the quality of the metal/semiconductor ohmic source and drain contacts impacts AMOSFET performance, we repot here on initial exploration of contact variations and of the impact of thermal process history. With process optimization, current on/off ratios of 106 and subthreshold swings of 70 mV/dec have been achieved with these simple devices

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