scholarly journals Gate capacitance of back-gated nanowire field-effect transistors

2006 ◽  
Vol 89 (8) ◽  
pp. 083102 ◽  
Author(s):  
Olaf Wunnicke
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Capacitance

Gate capacitance model for the design of graphene nanoribbon array field-effect transistors

RSC Advances ◽  
2015 ◽  
Vol 5 (68) ◽  
pp. 54861-54866 ◽  
Author(s):  
Myungwoo Son ◽  
Hangil Ki ◽  
Kihyeun Kim ◽  
Sunki Chung ◽  
Woong Lee ◽  
...  
Keyword(s):  
General Model ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Graphene Nanoribbon ◽  
Gate Capacitance ◽  
Capacitance Model ◽  
Fringe Fields

A general model for the prediction of capacitance in graphene nanoribbon array FETs was developed with considering complex fringe fields.

Structural effects of Channel Cross-Section on the Gate Capacitance of Silicon Nanowire Field-effect Transistors

2019 ◽  
Vol 34 (1) ◽  
pp. 87-92
Author(s):  
Soshi Sato ◽  
Kuniyuki Kakushima ◽  
Parhat Ahmet ◽  
Kenji Ohmori ◽  
Kenji Natori ◽  
...  
Keyword(s):  
Cross Section ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Channel Cross Section ◽  
Structural Effects ◽  
Gate Capacitance
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