Physical investigation of gate capacitance in In0.53Ga0.47As/In0.52Al0.48As quantum-well metal-oxide-semiconductor field-effect-transistors

Hyeon-Bhin Jo; Jung-Ho Park; Seung-Woo Son; Ji-Min Baek; Do-Young Yun; Yeonsung Kang; Yong-Hyun Seo; Lee Min Yung; Jung-Hee Lee; Tae-Woo Kim; Dae-Hyun Kim

doi:10.1063/1.5034041

Physical investigation of gate capacitance in In0.53Ga0.47As/In0.52Al0.48As quantum-well metal-oxide-semiconductor field-effect-transistors

AIP Advances ◽

10.1063/1.5034041 ◽

2018 ◽

Vol 8 (7) ◽

pp. 075203

Author(s):

Hyeon-Bhin Jo ◽

Jung-Ho Park ◽

Seung-Woo Son ◽

Ji-Min Baek ◽

Do-Young Yun ◽

...

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Physical Investigation ◽

Gate Capacitance

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Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method

Applied Physics Letters ◽

10.1063/1.4870257 ◽

2014 ◽

Vol 104 (13) ◽

pp. 131605 ◽

Cited By ~ 3

Author(s):

Thenappan Chidambaram ◽

Dmitry Veksler ◽

Shailesh Madisetti ◽

Andrew Greene ◽

Michael Yakimov ◽

...

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Trap Density ◽

Oxide Semiconductor ◽

Interface Trap Density ◽

Interface Trap ◽

Hall Method

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Impact of H2 High-Pressure Annealing Onto InGaAs Quantum-Well Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack

IEEE Electron Device Letters ◽

10.1109/led.2015.2438433 ◽

2015 ◽

Vol 36 (7) ◽

pp. 672-674 ◽

Cited By ~ 15

Author(s):

Tae-Woo Kim ◽

Hyuk-Min Kwon ◽

Seung Heon Shin ◽

Chan-Soo Shin ◽

Won-Kyu Park ◽

...

Keyword(s):

High Pressure ◽

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack ◽

Ingaas Quantum Well

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Modeling and Characterization of InAs Quantum-Well Metal-Oxide-Semiconductor Field Effect Transistors on Quartz for 1.0 THz Wave Detection

2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) ◽

10.1109/edtm47692.2020.9117824 ◽

2020 ◽

Author(s):

T. Maeda ◽

H. Ishii ◽

W. H. Chang ◽

H. Kanaya ◽

T. Asano

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thz Wave ◽

Wave Detection

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Impact of Correlation on Gate Capacitance Variability Due to Random Dopant Fluctuation and Work-Function Variation in Nanometer Metal-Oxide-Semiconductor-Field-Effect-Transistors

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2019.2644 ◽

2019 ◽

Vol 14 (7) ◽

pp. 1037-1041

Author(s):

Wei-Feng Lü ◽

Liang Dai ◽

Guang-Yi Wang ◽

Mi Lin

Keyword(s):

Metal Oxide ◽

Work Function ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Dopant Fluctuation ◽

Gate Capacitance ◽

Random Dopant

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L$_{\mathrm {g}} = 80$ -nm Trigate Quantum-Well In0.53Ga0.47As Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack

IEEE Electron Device Letters ◽

10.1109/led.2015.2393554 ◽

2015 ◽

Vol 36 (3) ◽

pp. 223-225 ◽

Cited By ~ 24

Author(s):

Tae-Woo Kim ◽

Dong-Hyi Koh ◽

Chan-Soo Shin ◽

Won-Kyu Park ◽

Tommaso Orzali ◽

...

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack

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Gate length and temperature dependence of negative differential transconductance in silicon quantum well metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.4931662 ◽

2015 ◽

Vol 118 (12) ◽

pp. 124505 ◽

Cited By ~ 7

Author(s):

Clint Naquin ◽

Mark Lee ◽

Hal Edwards ◽

Guru Mathur ◽

Tathagata Chatterjee ◽

...

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Temperature Dependence ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Length

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Physical origin and characteristics of gate capacitance in silicon metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.367271 ◽

1998 ◽

Vol 83 (9) ◽

pp. 4788-4796 ◽

Cited By ~ 9

Author(s):

Yasuyuki Nakajima ◽

Seiji Horiguchi ◽

Masanari Shoji ◽

Yasuhisa Omura

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Physical Origin ◽

Gate Capacitance

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Impact of virtual substrate growth on high performance strained Si/SiGe double quantum well metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1619197 ◽

2003 ◽

Vol 94 (10) ◽

pp. 6855-6863 ◽

Cited By ~ 13

Author(s):

S. H. Olsen ◽

A. G. O’Neill ◽

S. Chattopadhyay ◽

K. S. K. Kwa ◽

L. S. Driscoll ◽

...

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Quantum ◽

Strained Si ◽

Double Quantum Well

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Lg = 100 nm In0.7Ga0.3As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer

Applied Physics Letters ◽

10.1063/1.4871504 ◽

2014 ◽

Vol 104 (16) ◽

pp. 163502 ◽

Cited By ~ 4

Author(s):

D. Koh ◽

H. M. Kwon ◽

T.-W. Kim ◽

D.-H. Kim ◽

Todd W. Hudnall ◽

...

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Interfacial Layer ◽

Field Effect ◽

Field Effect Transistors ◽

Beryllium Oxide ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Effective Mobility Enhancement in Al2O3/InSb/Si Quantum Well Metal Oxide Semiconductor Field Effect Transistors for Thin InSb Channel Layers

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.04cf01 ◽

2013 ◽

Vol 52 (4S) ◽

pp. 04CF01 ◽

Cited By ~ 6

Author(s):

Taihei Ito ◽

Azusa Kadoda ◽

Koji Nakayama ◽

Yuichiro Yasui ◽

Masayuki Mori ◽

...

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effective Mobility

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