Gate capacitance scaling and graphene field-effect transistors with ultra-thin top-gate dielectrics

2011 ◽  
Author(s):  
Babak Fallahazad ◽  
Kayoung Lee ◽  
Seyoung Kim ◽  
Chris Corbet ◽  
Emanuel Tutuc
Keyword(s):  
Field Effect ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Gate Capacitance ◽  
Capacitance Scaling

scholarly journals Biologically sensitive field-effect transistors: from ISFETs to NanoFETs

2016 ◽  
Vol 60 (1) ◽  
pp. 81-90 ◽  
Author(s):  
Vivek Pachauri ◽  
Sven Ingebrandt
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Label Free ◽  
Biomolecular Detection ◽  
New Device ◽  
Label Free Detection ◽  
History Of

Biologically sensitive field-effect transistors (BioFETs) are one of the most abundant classes of electronic sensors for biomolecular detection. Most of the time these sensors are realized as classical ion-sensitive field-effect transistors (ISFETs) having non-metallized gate dielectrics facing an electrolyte solution. In ISFETs, a semiconductor material is used as the active transducer element covered by a gate dielectric layer which is electronically sensitive to the (bio-)chemical changes that occur on its surface. This review will provide a brief overview of the history of ISFET biosensors with general operation concepts and sensing mechanisms. We also discuss silicon nanowire-based ISFETs (SiNW FETs) as the modern nanoscale version of classical ISFETs, as well as strategies to functionalize them with biologically sensitive layers. We include in our discussion other ISFET types based on nanomaterials such as carbon nanotubes, metal oxides and so on. The latest examples of highly sensitive label-free detection of deoxyribonucleic acid (DNA) molecules using SiNW FETs and single-cell recordings for drug screening and other applications of ISFETs will be highlighted. Finally, we suggest new device platforms and newly developed, miniaturized read-out tools with multichannel potentiometric and impedimetric measurement capabilities for future biomedical applications.

SiO2/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors

2018 ◽  
Vol 57 (6S3) ◽  
pp. 06KA03
Author(s):  
Kenta Watanabe ◽  
Daiki Terashima ◽  
Mikito Nozaki ◽  
Takahiro Yamada ◽  
Satoshi Nakazawa ◽  
...  
Keyword(s):  
Field Effect ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Heterojunction Field Effect Transistors

Solution-deposited sodium beta-alumina gate dielectrics for low-voltage and transparent field-effect transistors

2009 ◽  
Vol 8 (11) ◽  
pp. 898-903 ◽  
Author(s):  
Bhola N. Pal ◽  
Bal Mukund Dhar ◽  
Kevin C. See ◽  
Howard E. Katz
Keyword(s):  
Field Effect ◽  
Low Voltage ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Sodium Beta Alumina ◽  
Beta Alumina

Parylene-Based Double-Layer Gate Dielectrics for Organic Field-Effect Transistors

2018 ◽  
Vol 10 (44) ◽  
pp. 37767-37772 ◽  
Author(s):  
Hyunjin Park ◽  
Hyungju Ahn ◽  
Jimin Kwon ◽  
Seongju Kim ◽  
Sungjune Jung
Keyword(s):  
Double Layer ◽  
Field Effect ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors
Sign in / Sign up

Export Citation Format

Share Document